Pub Date : 2025-01-17DOI: 10.1109/TMTT.2025.3530846
{"title":"2024 Index IEEE Transactions on Microwave Theory and Techniques Vol. 72","authors":"","doi":"10.1109/TMTT.2025.3530846","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3530846","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 12","pages":"1-127"},"PeriodicalIF":4.1,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844358","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TMTT.2024.3521177
Yulin He;Kewei Song;Haonan Wu;Milton Feng
Presents corrections to the paper, Corrections to “PCIe 5.0 Connector Distributed Physical-Based Circuit Model With Loading Resonances for Fast SI Diagnosis and Pathfinding”.
{"title":"Corrections to “PCIe 5.0 Connector Distributed Physical-Based Circuit Model With Loading Resonances for Fast SI Diagnosis and Pathfinding”","authors":"Yulin He;Kewei Song;Haonan Wu;Milton Feng","doi":"10.1109/TMTT.2024.3521177","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3521177","url":null,"abstract":"Presents corrections to the paper, Corrections to “PCIe 5.0 Connector Distributed Physical-Based Circuit Model With Loading Resonances for Fast SI Diagnosis and Pathfinding”.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"687-687"},"PeriodicalIF":4.1,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832381","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TMTT.2024.3522617
{"title":"Editori-in-Chief Call for Applicants","authors":"","doi":"10.1109/TMTT.2024.3522617","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3522617","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"688-688"},"PeriodicalIF":4.1,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/TMTT.2024.3501692
{"title":"Connect. Support. Inspire.","authors":"","doi":"10.1109/TMTT.2024.3501692","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3501692","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 12","pages":"7092-7092"},"PeriodicalIF":4.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10780440","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/TMTT.2024.3500998
{"title":"IEEE Transactions on Microwave Theory and Techniques Publication Information","authors":"","doi":"10.1109/TMTT.2024.3500998","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3500998","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 12","pages":"C2-C2"},"PeriodicalIF":4.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10780439","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/TMTT.2024.3501694
{"title":"IEEE Open Access Publishing","authors":"","doi":"10.1109/TMTT.2024.3501694","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3501694","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 12","pages":"7091-7091"},"PeriodicalIF":4.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10780436","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/TMTT.2024.3500996
{"title":"IEEE Transactions on Microwave Theory and Techniques Information for Authors","authors":"","doi":"10.1109/TMTT.2024.3500996","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3500996","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 12","pages":"C3-C3"},"PeriodicalIF":4.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10780438","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-28DOI: 10.1109/TMTT.2024.3496665
Hersh Desai;Wenhao Peng;Amir Mortazawi
This article marks the first demonstration of an integrated single-pole single-throw (SPST) radio frequency (RF) switch using ferroelectric thin films in acoustic wave devices. Polarization control via electric field application allows for selective acoustic phase inversion (API) to cause signal reflection via destructive interference. A specialized implementation of the modified Butterworth-Van Dyke (mBVD) model is presented to describe the on and off states of the switch. The equivalent circuit can accurately predict ferroelectric stacked crystal filter (SCF) S-parameters under various poling configurations and is also valid for the design of API RF switches. An integrated proof-of-principle device is presented using paraelectric barium strontium titanate, Ba0.5Sr0.5TiO3 (BST), SCFs. The switch has SCF-type response in the on state with insertion loss (IL) of under 1.8 dB and a notched off state response with an isolation of over 37 dB. The first thickness extensional mode occurs at 1.6 GHz, and the total area is $100times 200~mu $ m, including decoupling capacitor ( $100times 100~mu $ m) and electrical connections. Moreover, total active area consumes less than $26times 52~mu $ m, suggesting future miniaturization. With the increasing inclusion of ferroelectric materials, such as BST and scandium-doped aluminum nitride (ScAlN) in the next-generation acoustic wave devices, this novel switch provides an avenue to eliminate interconnects between RF switches and microwave acoustic filters in RF front ends.
{"title":"Single-Pole Single-Throw RF Acoustic Phase Inversion Switch Leveraging Poled Ferroelectrics","authors":"Hersh Desai;Wenhao Peng;Amir Mortazawi","doi":"10.1109/TMTT.2024.3496665","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3496665","url":null,"abstract":"This article marks the first demonstration of an integrated single-pole single-throw (SPST) radio frequency (RF) switch using ferroelectric thin films in acoustic wave devices. Polarization control via electric field application allows for selective acoustic phase inversion (API) to cause signal reflection via destructive interference. A specialized implementation of the modified Butterworth-Van Dyke (mBVD) model is presented to describe the\u0000<sc>on</small>\u0000 and\u0000<sc>off</small>\u0000 states of the switch. The equivalent circuit can accurately predict ferroelectric stacked crystal filter (SCF) S-parameters under various poling configurations and is also valid for the design of API RF switches. An integrated proof-of-principle device is presented using paraelectric barium strontium titanate, Ba0.5Sr0.5TiO3 (BST), SCFs. The switch has SCF-type response in the\u0000<sc>on</small>\u0000 state with insertion loss (IL) of under 1.8 dB and a notched\u0000<sc>off</small>\u0000 state response with an isolation of over 37 dB. The first thickness extensional mode occurs at 1.6 GHz, and the total area is \u0000<inline-formula> <tex-math>$100times 200~mu $ </tex-math></inline-formula>\u0000m, including decoupling capacitor (\u0000<inline-formula> <tex-math>$100times 100~mu $ </tex-math></inline-formula>\u0000m) and electrical connections. Moreover, total active area consumes less than \u0000<inline-formula> <tex-math>$26times 52~mu $ </tex-math></inline-formula>\u0000m, suggesting future miniaturization. With the increasing inclusion of ferroelectric materials, such as BST and scandium-doped aluminum nitride (ScAlN) in the next-generation acoustic wave devices, this novel switch provides an avenue to eliminate interconnects between RF switches and microwave acoustic filters in RF front ends.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"6-13"},"PeriodicalIF":4.1,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/TMTT.2024.3497996
Xiaojing Lv;Yang Yang;Zhen Luo;J. Scott Tyo
This article presents two 3-D bandpass frequency-selective surfaces (FSSs) featuring ultrawide and dual operating frequency spectra, respectively. Leveraging advanced multimaterial additive manufacturing, the design potential of 3-D meta-atoms can be unlocked. Compared to conventional 2.5-D or quasi-3-D FSSs that incorporate vias or microstrip lines, the proposed centrally loaded geometries facilitate in-depth topological optimization. The assembly of diverse fundamental FSS shapes introduces multiple poles and zeros, contributing to broad in-band transmission, extensive out-of-band rejections, and sharp transitions while still attaining simplicity when using equivalent circuit-transmission line modeling and associated qualitative design aids. The application-oriented FSSs are properly configured to fit the K-Ka spectra, where the ultrawideband FSS covers a fractional bandwidth of approximately 2:1, and the dual-band FSS offers two near-equal absolute bandwidths of 8 GHz. Both designs are inherently polarization insensitive due to unit-cell symmetry, and their robustness against oblique incidences has also been experimentally verified for both TE and TM modes.
本文介绍了两种具有超宽和双工作频谱的三维带通选频表面（fss）。利用先进的多材料增材制造技术，可以释放三维元原子的设计潜力。与传统的包含过孔或微带线的2.5 d或准3- d fss相比，提出的集中加载几何结构有助于深入的拓扑优化。各种基本FSS形状的组装引入了多个极点和零点，有助于宽带内传输，广泛的带外抑制和急剧过渡，同时在使用等效电路传输线建模和相关定性设计辅助工具时仍然获得简单性。面向应用的FSS经过适当配置以适应K-Ka频谱，其中超宽带FSS覆盖的分数带宽约为2:1，双频FSS提供两个近乎相等的8ghz绝对带宽。由于单位胞对称，这两种设计都具有固有的极化不敏感性，并且它们对斜入射的鲁棒性也在TE和TM模式下得到了实验验证。
{"title":"Multimaterial 3-D-Printed FSSs for Ultrawide and Dual Passbands in the K-Ka Spectra","authors":"Xiaojing Lv;Yang Yang;Zhen Luo;J. Scott Tyo","doi":"10.1109/TMTT.2024.3497996","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3497996","url":null,"abstract":"This article presents two 3-D bandpass frequency-selective surfaces (FSSs) featuring ultrawide and dual operating frequency spectra, respectively. Leveraging advanced multimaterial additive manufacturing, the design potential of 3-D meta-atoms can be unlocked. Compared to conventional 2.5-D or quasi-3-D FSSs that incorporate vias or microstrip lines, the proposed centrally loaded geometries facilitate in-depth topological optimization. The assembly of diverse fundamental FSS shapes introduces multiple poles and zeros, contributing to broad in-band transmission, extensive out-of-band rejections, and sharp transitions while still attaining simplicity when using equivalent circuit-transmission line modeling and associated qualitative design aids. The application-oriented FSSs are properly configured to fit the K-Ka spectra, where the ultrawideband FSS covers a fractional bandwidth of approximately 2:1, and the dual-band FSS offers two near-equal absolute bandwidths of 8 GHz. Both designs are inherently polarization insensitive due to unit-cell symmetry, and their robustness against oblique incidences has also been experimentally verified for both TE and TM modes.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"75-86"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article reports a first-ever decade-bandwidth pseudo-Doherty load-modulated balanced amplifier (PD-LMBA), designed for emerging 4G/5G communications and multiband operations. By revisiting the load-modulated balanced amplifier (LMBA) theory using an S-matrix-based signal-flow approach, a generalized theory for wideband LMBA operation is developed, taking into account the frequency-dependent nature of all components. In addition, by analyzing the signal-flow behavior of LMBA, a frequency-agnostic phase-alignment condition is identified as critical for ensuring intrinsic broadband load modulation. This unique design methodology enables, for the first time, the independent optimization of broadband balanced amplifier (BA, as the peaking) and control amplifier (CA, as the carrier), thus fundamentally addressing the longstanding limits imposed on the design of wideband load-modulated power amplifiers (PAs). To prove the proposed concept, an ultrawideband RF-input PD-LMBA is designed and developed using GaN technology covering the frequency range from 0.2 to 2 GHz. Experimental results demonstrate an efficiency of 51%–72% for peak output power and 44%–62% for 10-dB output power back-off (OBO), respectively.
{"title":"Signal-Flow-Based Analysis and Design of Pseudo-Doherty Load-Modulated Balanced Amplifier Toward Unlimited RF Bandwidth","authors":"Pingzhu Gong;Jiachen Guo;Niteesh Bharadwaj Vangipurapu;Kenle Chen","doi":"10.1109/TMTT.2024.3497894","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3497894","url":null,"abstract":"This article reports a first-ever decade-bandwidth pseudo-Doherty load-modulated balanced amplifier (PD-LMBA), designed for emerging 4G/5G communications and multiband operations. By revisiting the load-modulated balanced amplifier (LMBA) theory using an S-matrix-based signal-flow approach, a generalized theory for wideband LMBA operation is developed, taking into account the frequency-dependent nature of all components. In addition, by analyzing the signal-flow behavior of LMBA, a frequency-agnostic phase-alignment condition is identified as critical for ensuring intrinsic broadband load modulation. This unique design methodology enables, for the first time, the independent optimization of broadband balanced amplifier (BA, as the peaking) and control amplifier (CA, as the carrier), thus fundamentally addressing the longstanding limits imposed on the design of wideband load-modulated power amplifiers (PAs). To prove the proposed concept, an ultrawideband RF-input PD-LMBA is designed and developed using GaN technology covering the frequency range from 0.2 to 2 GHz. Experimental results demonstrate an efficiency of 51%–72% for peak output power and 44%–62% for 10-dB output power back-off (OBO), respectively.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"206-220"},"PeriodicalIF":4.1,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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