Renze Yu;Saeed Jahdi;Konstantinos Floros;Ingo Lüdtke;Phil Mellor
{"title":"Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs","authors":"Renze Yu;Saeed Jahdi;Konstantinos Floros;Ingo Lüdtke;Phil Mellor","doi":"10.1109/TDMR.2024.3431707","DOIUrl":null,"url":null,"abstract":"Uneven electro-thermal conditions between parallel-connected devices can reduce the overall reliability of the power electronics systems, particularly during extreme cases such as short circuit. The current distribution between parallel devices is dynamically regulated during the transient and the degradation of devices is intertwined in the long run. To better understand the evolving patterns in the parallel configuration and to compare differences among various device structures, repetitive short circuit tests were conducted on planar, symmetrical double-trench, and asymmetrical trench SiC MOSFETs. Technology computer-aided design (TCAD) models were employed to analyze the evolution of current density and temperature profile between parallel devices. Test results indicate that the switching speed difference caused by gate resistance (Rg) mismatch leads to the asynchronous degradation of asymmetrical trench devices. The decreased threshold voltage (Vth) induce higher short circuit energy (Esc), forming a positive feedback for degradation. Besides, even if the current is dynamically shared between parallel SiC MOSFETs under different case temperature (Tcase), the initial temperature has a key impact on short-circuit reliability over Esc.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 3","pages":"437-447"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10606071/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Uneven electro-thermal conditions between parallel-connected devices can reduce the overall reliability of the power electronics systems, particularly during extreme cases such as short circuit. The current distribution between parallel devices is dynamically regulated during the transient and the degradation of devices is intertwined in the long run. To better understand the evolving patterns in the parallel configuration and to compare differences among various device structures, repetitive short circuit tests were conducted on planar, symmetrical double-trench, and asymmetrical trench SiC MOSFETs. Technology computer-aided design (TCAD) models were employed to analyze the evolution of current density and temperature profile between parallel devices. Test results indicate that the switching speed difference caused by gate resistance (Rg) mismatch leads to the asynchronous degradation of asymmetrical trench devices. The decreased threshold voltage (Vth) induce higher short circuit energy (Esc), forming a positive feedback for degradation. Besides, even if the current is dynamically shared between parallel SiC MOSFETs under different case temperature (Tcase), the initial temperature has a key impact on short-circuit reliability over Esc.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
