Advancing piezoelectric properties of barium titanate ceramic through AC + DC field poling over Curie temperature

Adisu Tsige Shibiru, I. Fujii, Piyush Sapkota, Hyunwook Nam, G. Khanal, S. Ueno, Satoshi Wada
{"title":"Advancing piezoelectric properties of barium titanate ceramic through AC + DC field poling over Curie temperature","authors":"Adisu Tsige Shibiru, I. Fujii, Piyush Sapkota, Hyunwook Nam, G. Khanal, S. Ueno, Satoshi Wada","doi":"10.35848/1347-4065/ad6670","DOIUrl":null,"url":null,"abstract":"\n The significance of increased domain nucleation sites from smaller grain size (GS) of barium titanate (BT) ceramics on piezoelectric properties was analyzed for different types of poling, including conventional direct current (DC) poling, modified DC poling, and alternating current (AC) plus DC poling, conducted at different poling temperature. The AC plus DC poling conducted at 1.5 ℃ above the Curie temperature showed the highest piezoelectric constant (d\n 33) of 528 pC/N, with an average domain size of 100 nm observed after poling. The d\n 33 improvement was attributed to smaller domain size formation from field-induced phase transitions and homogenous distribution of point defects achieved by the AC field. Comparative analysis with larger grain BT ceramics under AC plus DC poling suggests that defects and volume fraction of grain boundaries in BT ceramics could have an effect on domain sizes.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"113 12","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad6670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The significance of increased domain nucleation sites from smaller grain size (GS) of barium titanate (BT) ceramics on piezoelectric properties was analyzed for different types of poling, including conventional direct current (DC) poling, modified DC poling, and alternating current (AC) plus DC poling, conducted at different poling temperature. The AC plus DC poling conducted at 1.5 ℃ above the Curie temperature showed the highest piezoelectric constant (d 33) of 528 pC/N, with an average domain size of 100 nm observed after poling. The d 33 improvement was attributed to smaller domain size formation from field-induced phase transitions and homogenous distribution of point defects achieved by the AC field. Comparative analysis with larger grain BT ceramics under AC plus DC poling suggests that defects and volume fraction of grain boundaries in BT ceramics could have an effect on domain sizes.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过交流+直流场极化提高钛酸钡陶瓷在居里温度以上的压电特性
分析了在不同极化温度下进行不同类型极化(包括传统直流(DC)极化、改良直流极化和交流加直流极化)时,钛酸钡(BT)陶瓷的较小晶粒尺寸(GS)所带来的畴成核点增加对压电特性的影响。在居里温度以上 1.5 ℃ 进行的交流加直流极化显示出最高的压电常数(d 33),为 528 pC/N,极化后观察到的平均畴尺寸为 100 nm。d 33 的改善归因于交流场诱导的相变和点缺陷的均匀分布所形成的较小的畴尺寸。与交流加直流极化条件下晶粒较大的 BT 陶瓷进行的比较分析表明,BT 陶瓷中的缺陷和晶界体积分数可能会影响畴尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Scintillator application of CsPbBr3 quantum dots-embedded SiO2 glasses Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories Monomer diffusion tendencies in complex-shaped materials by vapor deposition polymerization High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1