In situ measurement of electron emission yield at Si and SiO2 surfaces exposed to Ar/CF4 plasmas

Abstract

Plasma simulations require accurate yield data to predict the electron flux that is emitted when plasma-exposed surfaces are bombarded by energetic particles. One can measure yields directly using particle beams, but it is impractical to create a separate beam of each particle produced by typical plasmas. In contrast, measurements made in situ, during plasma exposure, provide useful values for the total emitted flux and effective yield produced by all incident particles. Here, in situ measurements were made at thermally oxidized and bare silicon wafers placed on the radio-frequency (rf) biased electrode of an inductively coupled plasma (icp) system. The rf current and voltage across the sheath at the wafer were measured, along with Langmuir probe measurements of ion current density and electron temperature. The measurements are input into a numerical sheath model, which allows the emitted electron current to be distinguished from other currents. The effective yield, i.e., the ratio of the total emitted electron flux to the incident ion flux, was determined at incident ion energies from 40 eV to 1.4 keV, for Si and SiO2 surfaces in Ar, CF4, and Ar/CF4 mixtures at 1.33 Pa (10 mTorr). Yields for Ar plasmas are compared with previous work. For SiO2 surfaces in Ar/CF4 mixtures and pure CF4, the yield is dominated by ion kinetic emission, which is the same for all mixtures, and, presumably, for all ions. For SiO2 surfaces in Ar/CF4 and CF4, the yield at high energies can be explained in part by fragmentation of molecular ions, and the yield from Ar+ can be distinguished from the other ionic species. Analytic fits of the yields are provided for use in plasma simulations.