Jun Jason Morihara, Jin Inajima, Zhenwei Wang, Junya Yoshinaga, Shota Sato, Kohki Eguchi, Takuya Tsutsumi, Y. Kumagai, M. Higashiwaki
{"title":"Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition","authors":"Jun Jason Morihara, Jin Inajima, Zhenwei Wang, Junya Yoshinaga, Shota Sato, Kohki Eguchi, Takuya Tsutsumi, Y. Kumagai, M. Higashiwaki","doi":"10.35848/1347-4065/ad6542","DOIUrl":null,"url":null,"abstract":"\n We investigated electrical properties of unintentionally doped (UID) Ga2O3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor deposition from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga2O3 layers were confirmed from current–voltage characteristics. The specific on-resistance of the SBD with the most resistive UID Ga2O3 layer was 2.2 × 107 Ωcm2. Capacitance–voltage characteristics revealed that most of the SBDs had complete depletion of the UID layers at thermal equilibrium, indicating that their residual effective donor densities were less than 3.0 × 1013 cm-3.\n","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 11","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad6542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We investigated electrical properties of unintentionally doped (UID) Ga2O3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor deposition from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga2O3 layers were confirmed from current–voltage characteristics. The specific on-resistance of the SBD with the most resistive UID Ga2O3 layer was 2.2 × 107 Ωcm2. Capacitance–voltage characteristics revealed that most of the SBDs had complete depletion of the UID layers at thermal equilibrium, indicating that their residual effective donor densities were less than 3.0 × 1013 cm-3.
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