Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

Chip Pub Date : 2024-09-01 DOI:10.1016/j.chip.2024.100105

Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu

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Abstract

In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (V_BR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high I_on/I_off ratio of approximately 10⁹, and a low specific on-resistance of 1.93 mΩ cm². When the ion implantation edge was terminated, the maximum V_BR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm^–2 and showed excellent reliability during pulse stress testing.

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具有双离子植入边缘终端的垂直 GaN 肖特基势垒二极管的电气性能和可靠性分析

在这项研究中，采用氢化物气相外延（HVPE）技术完全生长了氮化镓（GaN）衬底及其 15 μm 外延层。为了提高垂直氮化镓-氮化镓肖特基势垒二极管（SBD）的击穿电压（VBR），采用了碳和氦的双离子共植入来创建边缘终端。由此产生的器件具有 0.55 V 的低导通电压、约 109 的高离子/关断比和 1.93 mΩ cm2 的低比导通电阻。当离子注入边缘终止时，器件的最大 VBR 达到 1575 V，平均提高了 126%。这些器件的优点系数（FOM）高达 1.28 GW cm-2，并在脉冲应力测试中表现出卓越的可靠性。

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Chip

CiteScore

2.80

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0.00%

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