Pub Date : 2025-03-01DOI: 10.1016/j.chip.2024.100100
Zhongwang Wang , Xuefan Zhou , Xiaochi Liu , Aocheng Qiu , Caifang Gao , Yahua Yuan , Yumei Jing , Dou Zhang , Wenwu Li , Hang Luo , Junhao Chu , Jian Sun
{"title":"Corrigendum to “Wang, Z. et al. Van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing” Chip 2 (2023) 100044","authors":"Zhongwang Wang , Xuefan Zhou , Xiaochi Liu , Aocheng Qiu , Caifang Gao , Yahua Yuan , Yumei Jing , Dou Zhang , Wenwu Li , Hang Luo , Junhao Chu , Jian Sun","doi":"10.1016/j.chip.2024.100100","DOIUrl":"10.1016/j.chip.2024.100100","url":null,"abstract":"","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100100"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141700701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-01DOI: 10.1016/j.chip.2024.100126
Qingqing Qin , Ting Chen , Xinfang Zhang , Baoquan Ou , Jie Zhang , Chunwang Wu , Yi Xie , Wei Wu , Pingxing Chen
The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance. In this pursuit, we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangular-shaped electrode. Leveraging this expression, we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field. Distinct from the existing methods, our approach integrates a diverse array of experimental data, including the equilibrium positions of ions in a linear string, the equilibrium positions of single trapped ions, and trap frequencies, to effectively reduce the systematic errors. This approach provides considerable flexibility in voltage settings for data acquisition, making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings. In our experimental demonstration, we successfully minimized the discrepancy between observations and model predictions to a remarkable degree. The relative errors of secular frequencies were contained within ±0.5%, and the positional error of ions was constrained to less than 1.2 μm, which surpasses the performance of current methodologies.
{"title":"Characterizing the spatial potential of an ion trap chip","authors":"Qingqing Qin , Ting Chen , Xinfang Zhang , Baoquan Ou , Jie Zhang , Chunwang Wu , Yi Xie , Wei Wu , Pingxing Chen","doi":"10.1016/j.chip.2024.100126","DOIUrl":"10.1016/j.chip.2024.100126","url":null,"abstract":"<div><div>The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance. In this pursuit, we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangular-shaped electrode. Leveraging this expression, we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field. Distinct from the existing methods, our approach integrates a diverse array of experimental data, including the equilibrium positions of ions in a linear string, the equilibrium positions of single trapped ions, and trap frequencies, to effectively reduce the systematic errors. This approach provides considerable flexibility in voltage settings for data acquisition, making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings. In our experimental demonstration, we successfully minimized the discrepancy between observations and model predictions to a remarkable degree. The relative errors of secular frequencies were contained within ±0.5%, and the positional error of ions was constrained to less than 1.2 μm, which surpasses the performance of current methodologies.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100126"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143636751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-14DOI: 10.1016/j.chip.2025.100132
Xincheng Jiang , Peicheng Lin , Yeang Zhang , Ting Xu , Yan-qing Lu , Jun-long Kou
Nowadays, convolutional neural networks (CNNs) have become a powerful tool in areas such as object recognition, and natural language processing (NLP). However, considering that electronic convolutional operation always contains million-level parameters and complex calculation process, it consumes a large number of computing resources and time. To overcome these limitations, we propose a design of complex-amplitude-modulated meta-device which could perform various functions of image processing. In this work, we demonstrate the excellent performance of two-dimensional edge detection and Gaussian filtering. The proposed convolutional system serves as a new optical computing hardware, and provides a new approach for CNNs, biological microscopy and near-infrared imaging.
{"title":"Complex-Amplitude-Modulated Meta-Device for Optical Image Processing","authors":"Xincheng Jiang , Peicheng Lin , Yeang Zhang , Ting Xu , Yan-qing Lu , Jun-long Kou","doi":"10.1016/j.chip.2025.100132","DOIUrl":"10.1016/j.chip.2025.100132","url":null,"abstract":"<div><div>Nowadays, convolutional neural networks (CNNs) have become a powerful tool in areas such as object recognition, and natural language processing (NLP). However, considering that electronic convolutional operation always contains million-level parameters and complex calculation process, it consumes a large number of computing resources and time. To overcome these limitations, we propose a design of complex-amplitude-modulated meta-device which could perform various functions of image processing. In this work, we demonstrate the excellent performance of two-dimensional edge detection and Gaussian filtering. The proposed convolutional system serves as a new optical computing hardware, and provides a new approach for CNNs, biological microscopy and near-infrared imaging.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100132"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143799508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-30DOI: 10.1016/j.chip.2025.100131
Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He
High-performance electronics and optoelectronics play vital roles in modern society, as they are the fundamental building blocks of functional devices and systems. Two-dimensional semiconductor materials (2D-SCMs) are potential candidates for high-performance electronics and optoelectronics due to their excellent physical, chemical, electrical, and photonic properties. Owing to their special crystalline structure, they also present unique piezoelectricity, which opens a new door to the innovative fields of piezotronics and piezo-phototronics. Piezotronics and piezo-phototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics. In this review, firstly, the growth methods and piezoelectric properties of 2D-SCMs are stated, and the mechanisms of piezotronics and piezo-phototronics are also introduced. Afterwards, the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed. In addition, the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized. Finally, the research progresses are summarized, and future perspectives are proposed.
{"title":"Advances in piezotronics and piezo-phototronics of two-dimensional semiconductor materials","authors":"Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He","doi":"10.1016/j.chip.2025.100131","DOIUrl":"10.1016/j.chip.2025.100131","url":null,"abstract":"<div><div>High-performance electronics and optoelectronics play vital roles in modern society, as they are the fundamental building blocks of functional devices and systems. Two-dimensional semiconductor materials (2D-SCMs) are potential candidates for high-performance electronics and optoelectronics due to their excellent physical, chemical, electrical, and photonic properties. Owing to their special crystalline structure, they also present unique piezoelectricity, which opens a new door to the innovative fields of piezotronics and piezo-phototronics. Piezotronics and piezo-phototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics. In this review, firstly, the growth methods and piezoelectric properties of 2D-SCMs are stated, and the mechanisms of piezotronics and piezo-phototronics are also introduced. Afterwards, the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed. In addition, the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized. Finally, the research progresses are summarized, and future perspectives are proposed.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100131"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-14DOI: 10.1016/j.chip.2025.100128
Youtian Hu , Qingyun Li , Fan Yang , Jing Hu , Ximing Li , Jiale Ou , Zhenjun Zang , Bangyi Zhu , Qinyu Zeng , Huangpu Han , Yujie Ma , Wang Zhang , Shuangchen Ruan , Bingxi Xiang
Thin-film lithium niobate (TFLN) is considered a crucial platform innext-generationintegrated optoelectronics due to its excellent optical properties. Photodetectors are essential components for constructing fully functional photonic circuits. However, due to the low electrical conductivity and weak light absorption, TFLN cannot be directly used for fabricating photodetectors. In this study, we proposedand demonstratedahigh-performanceMoTe2/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths (1310 nm and 1550 nm). This structure enhances the photovoltaic effect by bending MoTe2at the edge of one electrode, thereby achievingself-poweredoperation. At a wavelength of 1310 nm, the photodetector achieves aself-poweredresponsivity of 70 mA/W, which is among the highest forwaveguide-integratedphotodetectors. Additionally, due to the strong rectification effect of the Schottky junction, the photodetector exhibits an extremely low dark current of only 25 pA at −0.5 V bias voltage. The on/off ratios reach 2.6 × 104 at 0 V and 4.1 × 104 at −0.5 V bias. Theself-poweredresponse timesweremeasured, showing fast response and recovery times of 160 μs and 169 μs, respectively.
{"title":"Self-powered asymmetric Schottky photodetector integrated with thin-film lithium niobate waveguide","authors":"Youtian Hu , Qingyun Li , Fan Yang , Jing Hu , Ximing Li , Jiale Ou , Zhenjun Zang , Bangyi Zhu , Qinyu Zeng , Huangpu Han , Yujie Ma , Wang Zhang , Shuangchen Ruan , Bingxi Xiang","doi":"10.1016/j.chip.2025.100128","DOIUrl":"10.1016/j.chip.2025.100128","url":null,"abstract":"<div><div><strong>Thin-film lithium niobate (TFLN) is considered a crucial platform in</strong> <strong>next-generation</strong> <strong>integrated optoelectronics due to its excellent optical properties. Photodetectors are essential components for constructing fully functional photonic circuits. However, due to the low electrical conductivity and weak light absorption, TFLN cannot be directly used for fabricating photodetectors. In this study, we propose</strong><strong>d</strong> <strong>and demonstrate</strong><strong>d</strong> <strong>a</strong> <strong>high-performance</strong> <strong>MoTe</strong><sub><strong>2</strong></sub><strong>/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths (1310 nm and 1550 nm). This structure enhances the photovoltaic effect by bending MoTe</strong><sub><strong>2</strong></sub> <strong>at the edge of one electrode, thereby achieving</strong> <strong>self-powered</strong> <strong>operation. At a wavelength of 1310 nm, the photodetector achieves a</strong> <strong>self-powered</strong> <strong>responsivity of 70 mA/W, which is among the highest for</strong> <strong>waveguide-integrated</strong> <strong>photodetectors. Additionally, due to the strong rectification effect of the Schottky junction, the photodetector exhibits an extremely low dark current of only 25 pA at −0.5 V bias voltage. The on/off ratios reach 2.6 × 10<sup>4</sup> at 0 V and 4.1 × 10<sup>4</sup> at −0.5 V bias. The</strong> <strong>self-powered</strong> <strong>response times</strong> <strong>were</strong> <strong>measured, showing fast response and recovery times of 160 μs and 169 μs, respectively.</strong></div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100128"},"PeriodicalIF":0.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143799507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-30DOI: 10.1016/j.chip.2024.100125
Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu
Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI3 surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb2+ defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10−11 A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 1012 Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
{"title":"Molecular engineering enables high-performance hybrid perovskite photodetector","authors":"Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu","doi":"10.1016/j.chip.2024.100125","DOIUrl":"10.1016/j.chip.2024.100125","url":null,"abstract":"<div><div>Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI<sub>3</sub> surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb<sup>2+</sup> defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10<sup>−11</sup> A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10<sup>12</sup> Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1016/j.chip.2024.100121
Yiqing Liu , Jinwen Lv , Ye Fan , Meixue Zong , Shubin Zhang , Zhengji Xu
Metasurface-enabled bound states in the continuum (BICs) provide a novel solution for achieving exceptionally high quality factors (Q factors), which could overcome the limitations of traditional mid-infrared filters, sensors, lasers, and nonlinear sources. However, most BIC metasurfaces are restricted by their sensitivity to specific incident angles, limiting their practical applications. Here, we introduced a germanium-based metasurface that supports two BIC modes for different polarizations, exhibiting robust angle insensitivity. By leveraging geometric asymmetry, we effectively controlled BIC leakage and coupling. The device maintained infinite Q factors under oblique incidence with preserved symmetry, and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry, regardless of TE or TM polarization. This angular robustness has been validated both theoretically and experimentally, demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.
{"title":"Angle-insensitive dual bound states in the continuum on germanium metasurface","authors":"Yiqing Liu , Jinwen Lv , Ye Fan , Meixue Zong , Shubin Zhang , Zhengji Xu","doi":"10.1016/j.chip.2024.100121","DOIUrl":"10.1016/j.chip.2024.100121","url":null,"abstract":"<div><div>Metasurface-enabled bound states in the continuum (BICs) provide a novel solution for achieving exceptionally high quality factors (<em>Q</em> factors), which could overcome the limitations of traditional mid-infrared filters, sensors, lasers, and nonlinear sources. However, most BIC metasurfaces are restricted by their sensitivity to specific incident angles, limiting their practical applications. Here, we introduced a germanium-based metasurface that supports two BIC modes for different polarizations, exhibiting robust angle insensitivity. By leveraging geometric asymmetry, we effectively controlled BIC leakage and coupling. The device maintained infinite <em>Q</em> factors under oblique incidence with preserved symmetry, and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry, regardless of TE or TM polarization. This angular robustness has been validated both theoretically and experimentally, demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1016/j.chip.2024.100122
Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang
The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga2O3 photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga2O3/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.
{"title":"Coexistence of unipolar and bipolar resistive switching in optical synaptic memristors and neuromorphic computing","authors":"Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang","doi":"10.1016/j.chip.2024.100122","DOIUrl":"10.1016/j.chip.2024.100122","url":null,"abstract":"<div><div>The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga<sub>2</sub>O<sub>3</sub> photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga<sub>2</sub>O<sub>3</sub>/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-20DOI: 10.1016/j.chip.2024.100120
Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu
In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf0.5Zr0.5O2 (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2Pr) of 55.4 μC/cm2, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO2 ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.
{"title":"Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing","authors":"Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu","doi":"10.1016/j.chip.2024.100120","DOIUrl":"10.1016/j.chip.2024.100120","url":null,"abstract":"<div><div>In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2<em>P</em>r) of 55.4 μC/cm<sup>2</sup>, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO<sub>2</sub> ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-07DOI: 10.1016/j.chip.2024.100119
Junhong Feng , Li Zheng , Xinhong Cheng , Lingyan Shen , Xuetong Zhou , Wenyu Lu , Jiayu Zeng
While silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have entered commercial markets, they still rely on specialized device structural approaches tailored to meet specific application demands. The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other. This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy. The proposed buried-MOS configuration ensures a harmonious balance among lower Ron,sp, reduced CGD, and milder EOX without compromising breakdown voltage (BV), thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their high-voltage, high-frequency performance and reliability. The experimental results quantitatively demonstrate the advantages of the buried-MOS structure: high-frequency figure of merit high-frequency figure of merit (HF-FOM) (RDS,on × CGD) by 2.5×, HF-FOM (RDS,on × QGD) by 2.2× and Baliga figure of merit (BFOM = 4BV2/Ron,sp) by 1.7× compared with the conventional BOX-MOS. Importantly, this approach embodies both theoretical significance and practical applicability, which is compatible with the existing large-scale manufacturing processes and requires no additional steps.
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