Pub Date : 2024-12-30DOI: 10.1016/j.chip.2024.100125
Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu
Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI3 surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb2+ defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10−11 A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 1012 Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
{"title":"Molecular engineering enables high-performance hybrid perovskite photodetector","authors":"Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu","doi":"10.1016/j.chip.2024.100125","DOIUrl":"10.1016/j.chip.2024.100125","url":null,"abstract":"<div><div>Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI<sub>3</sub> surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb<sup>2+</sup> defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10<sup>−11</sup> A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10<sup>12</sup> Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1016/j.chip.2024.100121
Yiqing Liu , Jinwen Lv , Ye Fan , Meixue Zong , Shubin Zhang , Zhengji Xu
Metasurface-enabled bound states in the continuum (BICs) provide a novel solution for achieving exceptionally high quality factors (Q factors), which could overcome the limitations of traditional mid-infrared filters, sensors, lasers, and nonlinear sources. However, most BIC metasurfaces are restricted by their sensitivity to specific incident angles, limiting their practical applications. Here, we introduced a germanium-based metasurface that supports two BIC modes for different polarizations, exhibiting robust angle insensitivity. By leveraging geometric asymmetry, we effectively controlled BIC leakage and coupling. The device maintained infinite Q factors under oblique incidence with preserved symmetry, and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry, regardless of TE or TM polarization. This angular robustness has been validated both theoretically and experimentally, demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.
{"title":"Angle-insensitive dual bound states in the continuum on germanium metasurface","authors":"Yiqing Liu , Jinwen Lv , Ye Fan , Meixue Zong , Shubin Zhang , Zhengji Xu","doi":"10.1016/j.chip.2024.100121","DOIUrl":"10.1016/j.chip.2024.100121","url":null,"abstract":"<div><div>Metasurface-enabled bound states in the continuum (BICs) provide a novel solution for achieving exceptionally high quality factors (<em>Q</em> factors), which could overcome the limitations of traditional mid-infrared filters, sensors, lasers, and nonlinear sources. However, most BIC metasurfaces are restricted by their sensitivity to specific incident angles, limiting their practical applications. Here, we introduced a germanium-based metasurface that supports two BIC modes for different polarizations, exhibiting robust angle insensitivity. By leveraging geometric asymmetry, we effectively controlled BIC leakage and coupling. The device maintained infinite <em>Q</em> factors under oblique incidence with preserved symmetry, and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry, regardless of TE or TM polarization. This angular robustness has been validated both theoretically and experimentally, demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1016/j.chip.2024.100122
Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang
The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga2O3 photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga2O3/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.
{"title":"Coexistence of unipolar and bipolar resistive switching in optical synaptic memristors and neuromorphic computing","authors":"Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang","doi":"10.1016/j.chip.2024.100122","DOIUrl":"10.1016/j.chip.2024.100122","url":null,"abstract":"<div><div>The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga<sub>2</sub>O<sub>3</sub> photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga<sub>2</sub>O<sub>3</sub>/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-20DOI: 10.1016/j.chip.2024.100120
Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu
In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf0.5Zr0.5O2 (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2Pr) of 55.4 μC/cm2, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO2 ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.
{"title":"Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing","authors":"Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu","doi":"10.1016/j.chip.2024.100120","DOIUrl":"10.1016/j.chip.2024.100120","url":null,"abstract":"<div><div>In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2<em>P</em>r) of 55.4 μC/cm<sup>2</sup>, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO<sub>2</sub> ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-07DOI: 10.1016/j.chip.2024.100119
Junhong Feng , Li Zheng , Xinhong Cheng , Lingyan Shen , Xuetong Zhou , Wenyu Lu , Jiayu Zeng
While silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have entered commercial markets, they still rely on specialized device structural approaches tailored to meet specific application demands. The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other. This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy. The proposed buried-MOS configuration ensures a harmonious balance among lower Ron,sp, reduced CGD, and milder EOX without compromising breakdown voltage (BV), thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their high-voltage, high-frequency performance and reliability. The experimental results quantitatively demonstrate the advantages of the buried-MOS structure: high-frequency figure of merit high-frequency figure of merit (HF-FOM) (RDS,on × CGD) by 2.5×, HF-FOM (RDS,on × QGD) by 2.2× and Baliga figure of merit (BFOM = 4BV2/Ron,sp) by 1.7× compared with the conventional BOX-MOS. Importantly, this approach embodies both theoretical significance and practical applicability, which is compatible with the existing large-scale manufacturing processes and requires no additional steps.
{"title":"Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration","authors":"Junhong Feng , Li Zheng , Xinhong Cheng , Lingyan Shen , Xuetong Zhou , Wenyu Lu , Jiayu Zeng","doi":"10.1016/j.chip.2024.100119","DOIUrl":"10.1016/j.chip.2024.100119","url":null,"abstract":"<div><div>While silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have entered commercial markets, they still rely on specialized device structural approaches tailored to meet specific application demands. The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other. This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy. The proposed buried-MOS configuration ensures a harmonious balance among lower <em>R</em><sub>on,sp</sub>, reduced <em>C</em><sub>GD</sub>, and milder <em>E</em><sub>OX</sub> without compromising breakdown voltage (<em>BV</em>), thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their high-voltage, high-frequency performance and reliability. The experimental results quantitatively demonstrate the advantages of the buried-MOS structure: high-frequency figure of merit high-frequency figure of merit (HF-FOM) (<em>R</em><sub>DS,on</sub> × <em>C</em><sub>GD</sub>) by 2.5×, HF-FOM (<em>R</em><sub>DS,on</sub> × <em>Q</em><sub>GD</sub>) by 2.2× and Baliga figure of merit (BFOM = 4BV<sup>2</sup>/<em>R</em><sub>on,sp</sub>) by 1.7× compared with the conventional BOX-MOS. Importantly, this approach embodies both theoretical significance and practical applicability, which is compatible with the existing large-scale manufacturing processes and requires no additional steps.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100119"},"PeriodicalIF":0.0,"publicationDate":"2024-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143453223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-04DOI: 10.1016/j.chip.2024.100118
Tong Xu , Shulin Sha , Kai Tang , Xuefeng Fan , Jinguo Liu , Caixia Kan , Gangyi Zhu , Feifei Qin , Daning Shi , Mingming Jiang
The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W−1, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.
{"title":"On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector","authors":"Tong Xu , Shulin Sha , Kai Tang , Xuefeng Fan , Jinguo Liu , Caixia Kan , Gangyi Zhu , Feifei Qin , Daning Shi , Mingming Jiang","doi":"10.1016/j.chip.2024.100118","DOIUrl":"10.1016/j.chip.2024.100118","url":null,"abstract":"<div><div>The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W<sup>−1</sup>, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100118"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143378634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-01DOI: 10.1016/j.chip.2024.100115
Feifei Qin , Xueyao Lu , Xiaoxuan Wang , Chunxiang Guo , Jiaqi Wu , Xuefeng Fan , Mingming Jiang , Peng Wan , Junfeng Lu , Yongjin Wang , Gangyi Zhu
Featured with light emission and detection coexistence phenomenon,nitride-basedmultiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures.Three-dimensional(3D) structuresare endowed withextra advantages in direction,polarization,and absorption modulation and maypioneera new way to make the same thing over and overagainwith interesting properties. In this paper, we designed and fabricated asingle-cantileverInGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of themulti-layermaterials is the key principle for theself-warpeddevice. The planar structure will bear greater compressive stress while the warped beam part has less stress,whichresultsin differences in the optical and electrical performance. Thestrain-inducedband bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structuresexhibita directional emission with lowerturn-onvoltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter fordirectional-relatedoptical communication. As a receiver, 3D structures have lowerdark-current,higher photocurrent, andred-shiftedresponse spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of thesingle-cantileverGaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.
{"title":"On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters","authors":"Feifei Qin , Xueyao Lu , Xiaoxuan Wang , Chunxiang Guo , Jiaqi Wu , Xuefeng Fan , Mingming Jiang , Peng Wan , Junfeng Lu , Yongjin Wang , Gangyi Zhu","doi":"10.1016/j.chip.2024.100115","DOIUrl":"10.1016/j.chip.2024.100115","url":null,"abstract":"<div><div><strong>Featured with light emission and detection coexistence phenomenon,</strong> <strong>nitride-based</strong> <strong>multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures.</strong> <strong>Three-dimensional</strong> <strong>(3D) structures</strong> <strong>are endowed with</strong> <strong>extra advantages in direction</strong><strong>,</strong> <strong>p</strong><strong>olarization</strong><strong>,</strong> <strong>and absorption modulation and may</strong> <strong>pioneer</strong> <strong>a new way to make the same thing over and over</strong> <strong>again</strong> <strong>with interesting properties. In this paper, we designed and fabricated a</strong> <strong>single-cantilever</strong> <strong>InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of the</strong> <strong>multi-layer</strong> <strong>materials is the key principle for the</strong> <strong>self-warped</strong> <strong>device. The planar structure will bear greater compressive stress while the warped beam part has less stress,</strong> <strong>which</strong> <strong>result</strong><strong>s</strong> <strong>in differences in the optical and electrical performance. The</strong> <strong>strain-induced</strong> <strong>band bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structures</strong> <strong>exhibit</strong> <strong>a directional emission with lower</strong> <strong>turn-on</strong> <strong>voltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter for</strong> <strong>directional-related</strong> <strong>optical communication. As a receiver, 3D structures have lower</strong> <strong>dark-current,</strong> <strong>higher photocurrent, and</strong> <strong>red-shifted</strong> <strong>response spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of the</strong> <strong>single-cantilever</strong> <strong>GaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.</strong></div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-01DOI: 10.1016/j.chip.2024.100109
Tianyue Li , Mengjiao Liu , Jiahao Hou , Xing Yang , Shubo Wang , Shuming Wang , Shining Zhu , Din Ping Tsai , Zhenlin Wang
Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.
{"title":"Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects","authors":"Tianyue Li , Mengjiao Liu , Jiahao Hou , Xing Yang , Shubo Wang , Shuming Wang , Shining Zhu , Din Ping Tsai , Zhenlin Wang","doi":"10.1016/j.chip.2024.100109","DOIUrl":"10.1016/j.chip.2024.100109","url":null,"abstract":"<div><div>Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents an integrated multi-quantum well (MQW) optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated using standard microfabrication techniques and adopted the identical InGaN/GaN MQWs, which enables simultaneous emission and detection. The sensor is featured with a double concentric circle structure which supports both on-chip and off-chip detection mechanisms, being capable of detecting environmental parameters like rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to 8000 rpm, a 3 cm vertical detection range, and a linear response with 3.9 nA/% sensitivity to changes in sucrose concentration, which demonstrates the potential for diverse applications in industrial and biomedical fields.
{"title":"III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring","authors":"Xumin Gao , Dongmei Wu , Tianlong Xie , Jialei Yuan , Mingyuan Xie , Yongjin Wang , Haitao Zhao , Gangyi Zhu , Zheng Shi","doi":"10.1016/j.chip.2024.100113","DOIUrl":"10.1016/j.chip.2024.100113","url":null,"abstract":"<div><div>This work presents an integrated multi-quantum well (MQW) optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated using standard microfabrication techniques and adopted the identical InGaN/GaN MQWs, which enables simultaneous emission and detection. The sensor is featured with a double concentric circle structure which supports both on-chip and off-chip detection mechanisms, being capable of detecting environmental parameters like rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to 8000 rpm, a 3 cm vertical detection range, and a linear response with 3.9 nA/% sensitivity to changes in sucrose concentration, which demonstrates the potential for diverse applications in industrial and biomedical fields.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-01DOI: 10.1016/j.chip.2024.100114
Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao
Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.
{"title":"Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication","authors":"Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao","doi":"10.1016/j.chip.2024.100114","DOIUrl":"10.1016/j.chip.2024.100114","url":null,"abstract":"<div><div>Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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