Chip最新文献 - Book学术

Two-dimensional materials-based artificial neuron devices and their working mechanism 基于二维材料的人工神经元装置及其工作机理

IF 7.1

Chip

Pub Date : 2025-07-11 DOI: 10.1016/j.chip.2025.100161

Yangwu Wu , Yijia Wu , Huimin Li , Song Liu

The rapid development of artificial intelligence and robotics has created increased demands for the efficiency and performance of computer hardware. Neuromorphic computing provides a platform to process vast datasets with low power consumption, addressing the critical bottlenecks in conventional computing architectures and representing a promising approach for bridging biological systems with machines. Recent advances reported that synaptic devices based on two-dimensional (2D) layered semiconductor materials have demonstrated excellent biomimetic properties and significance for neuromorphic applications. Moreover, integrating biomimetic sensory systems with 2D materials-based synaptic devices that achieve signal sensing and spike-based information processing has received significant attention from researchers. In this review, we provide a comprehensive overview of biomimetic sensory neural systems, focusing on 2D material-based devices and their operational mechanisms. First, we provide a brief introduction to the structure of the artificial synaptic device. Then, we outline fundamental biological sensory principles and advanced artificial sensor system design, including visual, tactile, smell, taste, and auditory functions. Next, we summarize the use of bio-inspired artificial perception systems for information processing. Finally, we discuss challenges and directions for development of future artificial sensor systems.

人工智能和机器人技术的快速发展对计算机硬件的效率和性能提出了更高的要求。神经形态计算提供了一个以低功耗处理大量数据集的平台，解决了传统计算架构中的关键瓶颈，并代表了连接生物系统与机器的有前途的方法。近年来，基于二维（2D）层状半导体材料的突触装置显示出优异的仿生性能和在神经形态应用中的重要意义。此外，将仿生感觉系统与基于二维材料的突触装置相结合，实现信号传感和基于尖峰的信息处理，受到了研究人员的极大关注。在这篇综述中，我们提供了仿生感觉神经系统的全面概述，重点是基于二维材料的设备及其操作机制。首先，我们简要介绍了人工突触装置的结构。然后，我们概述了基本的生物感觉原理和先进的人工传感器系统设计，包括视觉，触觉，嗅觉，味觉和听觉功能。接下来，我们总结了仿生人工感知系统在信息处理中的应用。最后，讨论了未来人工传感器系统面临的挑战和发展方向。

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引用次数: 0

Laser direct lithography of large-area three-dimensional integrated photonics: Technological challenges and advances 激光直接光刻大面积三维集成光子学：技术挑战与进步

IF 7.1

Chip

Pub Date : 2025-06-14 DOI: 10.1016/j.chip.2025.100157

Lijing Zhong , Yuying Wang , Xuhu Han , Jiacheng Hu , Jianrong Qiu

Integrated optics have been stuck in two-dimensional (2D) topologies for decades until the femtosecond laser direct writing (FLDW) technique enables direct lithography of three-dimensional (3D) geometries and nanoscale structures with rapid prototyping and large-scale manufacturing capabilities in a variety of transparent substrates. The 3D capability of FLDW makes diverse light-wave remapping geometries possible, thereby realizing efficient interconnection of optical systems at different spatial scales, offering a 3D integrated-optics footprint capable of scaling a benchtop optical system down to a 3D glass chip. This work summarizes the history and important milestones in developing FLDW waveguides. Basically, all revolutionary improvements in waveguide key performance, including low propagation loss and small bending radius, were accompanied by the discovery and development of new mechanisms for laser-induced refractive index modification. At the same time, advanced laser beam-shaping methods for tightly focused spatiotemporal fields have been technically grafted onto the fine control of laser–matter interaction in FLDW, notably achieving variable cross-section, arbitrary refractive index and mode-field distribution, thus providing new degrees of freedom beyond the limitations of traditional 2D planar waveguides for more complex photonics circuit design. In this work, we present a comprehensive review of the field, encompassing fundamental mechanisms (such as refractive index modification) as well as key technological advances that enable true 3D integration. On the basis of this, we summarize the basic integrated waveguide components fabricated by FLDW and point out the prospective challenges and future research directions. Tentative routes towards large-area, ultra-broadband, hybrid, multifunctional, all-optical system integration in 3D glass chips are also suggested.

几十年来，集成光学一直停留在二维（2D）拓扑结构中，直到飞秒激光直写（FLDW）技术使三维（3D）几何形状和纳米级结构的直接光刻具有快速原型和大规模制造能力的各种透明基板。FLDW的3D能力使不同的光波重新映射几何形状成为可能，从而实现不同空间尺度下光学系统的有效互连，提供能够将台式光学系统缩小到3D玻璃芯片的3D集成光学足迹。本文总结了FLDW波导发展的历史和重要里程碑。基本上，波导关键性能的所有革命性改进，包括低传播损耗和小弯曲半径，都伴随着激光诱导折射率改变新机制的发现和发展。同时，先进的紧密聚焦时空场的激光束整形方法已经在技术上嫁接到FLDW中激光与物质相互作用的精细控制上，特别是实现了变截面、任意折射率和模场分布，从而为更复杂的光子电路设计提供了超越传统二维平面波导限制的新的自由度。在这项工作中，我们对该领域进行了全面的回顾，包括基本机制（如折射率修改）以及实现真正3D集成的关键技术进步。在此基础上，我们总结了FLDW制造的基本集成波导元件，并指出了未来的挑战和研究方向。提出了在三维玻璃芯片上实现大面积、超宽带、混合、多功能、全光系统集成的设想路线。

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引用次数: 0

On-chip signal isolation based on mode orthogonality in plasmonic dual-mode transmission line 等离子体双模传输线中基于模式正交性的片上信号隔离

IF 7.1

Chip

Pub Date : 2025-05-30 DOI: 10.1016/j.chip.2025.100153

Kai Lu , Jiemin Wu , Chenchen Li , Ming Wan , Shiqi Zhang , Hao Gao , Di Bao , Tie Jun Cui

We proposed a spoof surface plasmon polariton (SSPP) dual-mode transmission line (DMTL) formed by mirror serpentine periodic structures (MSPSs), which features the odd- and even-mode dispersion curves overlapping in a wide frequency range. With the mode exciter and mode recognizer in reciprocal form attached to both ends of SSPP DMTL, the two modes can be transmitted at the same time and their orthogonality was validated. An on-chip SSPP DMTL was implemented using the GaAs technology with a compact electrical dimension of 0.125∗0.011∗0.017λ³. The measured efficiencies of odd- and even-mode co-frequency signal transmissions were higher than −1.817 dB and −0.89 dB, respectively, while the degree of mode isolation was higher than 15 dB. The proposed SSPP DMTL doubles the communication capacity in a fixed frequency band and exhibits great potential in the composite communication systems.

提出了一种由镜面蛇形周期结构（mspp）构成的欺骗表面等离子激元（SSPP）双模传输线（DMTL），其特点是奇模和偶模色散曲线在宽频率范围内重叠。将模式激励器和模式识别器以互易形式附加在SSPP DMTL的两端，可以同时传输两种模式，并验证了它们的正交性。片上SSPP DMTL采用GaAs技术实现，电尺寸紧凑，为0.125∗0.011∗0.017λ3。测量到的奇模和偶模共频信号传输效率分别高于- 1.817 dB和- 0.89 dB，模隔离度高于15 dB。所提出的SSPP DMTL在固定频段内的通信容量增加了一倍，在复合通信系统中显示出巨大的潜力。

引用次数: 0

Integrated colloidal quantum dot devices for on-chip light sources 用于片上光源的集成胶体量子点器件

IF 7.1

Chip

Pub Date : 2025-05-27 DOI: 10.1016/j.chip.2025.100152

Luwei Zhou , Yangzhi Tan , Dadi Tian , Taikang Ye , Fankai Zheng , Fengqi Qiu , Hechun Zhang , Nan Zhang , Mingjie Li , Xiao Wei Sun , Hoi Wai Choi , Dan Wu , Kai Wang

The rapid advancement of photonic integrated circuits (PICs) has presented a promising solution to meet future demands for faster data transmission, broader bandwidth, and lower power consumption. However, the indirect bandgap of silicon presents challenges in achieving optical gain, necessitating the integration of III-V materials through complex and costly bonding or epitaxial techniques. In this context, colloidal quantum dots (CQDs) have emerged as a viable alternative for on-chip light sources due to their unique properties, including cost-effective synthesis, high photoluminescence quantum yield, precisely tunable emission wavelengths across visible to near-infrared, and excellent solution processability. These distinct advantages position CQDs as promising components for next-generation optoelectronic devices, fueling advancements in fields such as telecommunications, sensing, and display technologies. In this review, we systematically examine the structural evolution of CQDs aiming at luminescent property enhancement and explore their integration with various photonic platforms. Key applications are discussed, focusing on waveguide-coupled CQD light-emitting diodes and lasers, metasurface-integrated CQD lasers, and cavity-coupled CQD single-photon sources. Additionally, this review presents recent efforts in promoting electrically pumped CQD lasers, highlighting the potential of CQD light sources to revolutionize on-chip photonic systems. Finally, we present prospects for further development of CQD-based on-chip light sources, emphasizing their role in the future of integrated photonics.

光子集成电路（PICs）的快速发展为满足未来对更快的数据传输、更宽的带宽和更低的功耗的需求提供了一个有前途的解决方案。然而，硅的间接带隙在实现光学增益方面提出了挑战，需要通过复杂且昂贵的键合或外延技术来集成III-V材料。在这种情况下，胶体量子点（CQDs）由于其独特的特性而成为片上光源的可行替代方案，包括具有成本效益的合成，高光致发光量子产率，可精确调谐可见光至近红外的发射波长，以及出色的溶液可加工性。这些独特的优势使CQDs成为下一代光电器件的有前途的组件，推动了电信，传感和显示技术等领域的进步。在这篇综述中，我们系统地研究了CQDs的结构演变，以增强发光性能，并探讨了它们与各种光子平台的集成。重点讨论了波导耦合CQD发光二极管和激光器、超表面集成CQD激光器和腔耦合CQD单光子源的应用。此外，本文还介绍了最近在推广电泵浦CQD激光器方面的努力，强调了CQD光源对片上光子系统的革命性影响。最后，我们展望了基于cqd的片上光源的进一步发展，强调了它们在未来集成光子学中的作用。

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引用次数: 0

Controllable floating gate memory performance through device structure design 通过器件结构设计实现可控浮栅存储器性能

IF 7.1

Chip

Pub Date : 2025-05-20 DOI: 10.1016/j.chip.2025.100151

Ruitong Bie , Ce Li , Zirui Zhang , Tianze Yu , Dongliang Yang , Binghe Liu , Linfeng Sun

Floating gate memory devices based on two-dimensional materials hold tremendous potential for high-performance nonvolatile memory. However, the memory performance of the devices utilizing the same two-dimensional heterostructures exhibits significant differences from lab to lab, which is often attributed to variations in material thickness or interface quality without a detailed exploration. Such uncontrollable performance coupled with an insufficient understanding of the underlying working mechanism hinders the advancement of high-performance floating gate memory. Here, we report controllable and stable memory performance in floating gate memory devices through device structure design under precisely identical conditions. For the first time, the general differences in polarity and on/off ratio of the memory window caused by distinct structural features have been revealed and the underlying working mechanisms were clearly elucidated. Moreover, controllable tunneling paths that are responsible for two-terminal memory performance have also been demonstrated. The findings provide a general and reliable strategy for polarity control and performance optimization of two-dimensional floating gate memory devices.

基于二维材料的浮栅存储器件在高性能非易失性存储器方面具有巨大的潜力。然而，使用相同二维异质结构的器件的存储性能在实验室之间表现出显着差异，这通常归因于材料厚度或界面质量的变化，而没有详细的探索。这种不可控的性能加上对底层工作机制的理解不足，阻碍了高性能浮栅存储器的发展。在此，我们报告了在完全相同的条件下，通过器件结构设计，浮栅存储器件具有可控和稳定的存储性能。首次揭示了由不同结构特征引起的记忆窗极性和开关比的一般差异，并清楚地阐明了其潜在的工作机制。此外，还证明了可控制的隧道路径对双端存储性能的影响。研究结果为二维浮栅存储器件的极性控制和性能优化提供了一种通用的、可靠的策略。

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引用次数: 0

Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing 具有InGaN/GaN量子阱的核壳微磁盘，用于双频窃窃廊模式激光

IF 7.1

Chip

Pub Date : 2025-05-06 DOI: 10.1016/j.chip.2025.100150

Jianqi Dong , Zhuoming Liang , Chenguang He , Ningyang Liu , Zhitao Chen , Qiao Wang , Kang Zhang , Chunxiang Xu , Xingfu Wang

The development of high-quality, stable, and cost-effective micro/nano dual-band lasing remains a crucial challenge for multifunctional applications. In this study, we demonstrated high-Q dual-band whispering gallery mode lasing in an independent core-shell microdisk, emitting both ultraviolet and blue lasing. The GaN-based microdisk with InGaN/GaN quantum wells served as the core, while a SiO₂ layer was deposited on the sidewalls to construct the core-shell microdisk. This independent structure was fabricated using the graphically epitaxial lift-off method, which effectively mitigates light leakage issues associated with the substrate and facilitates flexible device integration. Compared to the microdisk without a SiO₂ shell coating, the threshold of ultraviolet lasing in the core-shell microdisk was reduced by 1.6 times, the quality factor (Q-factor) was enhanced by 21.7%, and blue lasing was successfully achieved. The underlying physical mechanisms were thoroughly analyzed through steady-state and time-resolved photoluminescence, along with finite-difference time-domain simulations. Furthermore, cooling from 300 K to 100 K could significantly enhance the lasing performance, increasing the Q-factor by factors of 1.7 and 1.9 in the ultraviolet and blue bands, respectively. Additionally, due to thermal expansion and thermo-optical effects, the blue lasing mode exhibits a temperature-dependent wavelength shift with a slope of −0.007 nm/K. The generation and optimization of dual-band lasing within a single microcavity offer new opportunities for broadband optical communication, high-sensitivity multi-wavelength biosensing, multi-label biomedical imaging, and high-density optical storage.

开发高质量、稳定、低成本的微纳双波段激光仍然是多功能应用的关键挑战。在这项研究中，我们在一个独立的核壳微磁盘上展示了高q双频窃窃廊模式激光，同时发射紫外线和蓝色激光。以InGaN/GaN量子阱为核心的GaN基微磁盘为核心，在侧壁沉积SiO2层，构建核壳微磁盘。这种独立的结构是使用图形外延提升方法制造的，有效地减轻了与衬底相关的漏光问题，并促进了灵活的器件集成。与无SiO2涂层的微磁盘相比，核壳微磁盘的紫外激光阈值降低了1.6倍，质量因子（Q-factor）提高了21.7%，成功实现了蓝色激光。通过稳态和时间分辨光致发光，以及时域有限差分模拟，深入分析了潜在的物理机制。此外，从300 K冷却到100 K可以显著提高激光性能，紫外和蓝波段的q因子分别增加1.7和1.9倍。此外，由于热膨胀和热光学效应，蓝色激光模式表现出温度相关的波长位移，斜率为- 0.007 nm/K。单微腔内双波段激光的产生和优化为宽带光通信、高灵敏度多波长生物传感、多标签生物医学成像和高密度光存储提供了新的机遇。

{"title":"Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing","authors":"Jianqi Dong , Zhuoming Liang , Chenguang He , Ningyang Liu , Zhitao Chen , Qiao Wang , Kang Zhang , Chunxiang Xu , Xingfu Wang","doi":"10.1016/j.chip.2025.100150","DOIUrl":"10.1016/j.chip.2025.100150","url":null,"abstract":"<div><div>The development of high-quality, stable, and cost-effective micro/nano dual-band lasing remains a crucial challenge for multifunctional applications. In this study, we demonstrated high-Q dual-band whispering gallery mode lasing in an independent core-shell microdisk, emitting both ultraviolet and blue lasing. The GaN-based microdisk with InGaN/GaN quantum wells served as the core, while a SiO<sub>2</sub> layer was deposited on the sidewalls to construct the core-shell microdisk. This independent structure was fabricated using the graphically epitaxial lift-off method, which effectively mitigates light leakage issues associated with the substrate and facilitates flexible device integration. Compared to the microdisk without a SiO<sub>2</sub> shell coating, the threshold of ultraviolet lasing in the core-shell microdisk was reduced by 1.6 times, the quality factor (Q-factor) was enhanced by 21.7%, and blue lasing was successfully achieved. The underlying physical mechanisms were thoroughly analyzed through steady-state and time-resolved photoluminescence, along with finite-difference time-domain simulations. Furthermore, cooling from 300 K to 100 K could significantly enhance the lasing performance, increasing the Q-factor by factors of 1.7 and 1.9 in the ultraviolet and blue bands, respectively. Additionally, due to thermal expansion and thermo-optical effects, the blue lasing mode exhibits a temperature-dependent wavelength shift with a slope of −0.007 nm/K. The generation and optimization of dual-band lasing within a single microcavity offer new opportunities for broadband optical communication, high-sensitivity multi-wavelength biosensing, multi-label biomedical imaging, and high-density optical storage.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100150"},"PeriodicalIF":7.1,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145738218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A C-band cryogenic gallium arsenide low-noise amplifier for quantum applications 用于量子应用的c波段低温砷化镓低噪声放大器

IF 7.1

Chip

Pub Date : 2025-04-03 DOI: 10.1016/j.chip.2025.100146

Zechen Guo , Daxiong Sun , Peisheng Huang , Xuandong Sun , Yuefeng Yuan , Jiawei Zhang , Wenhui Huang , Yongqi Liang , Jiawei Qiu , Jiajian Zhang , Ji Chu , Weijie Guo , Ji Jiang , Jingjing Niu , Wenhui Ren , Ziyu Tao , Xiayu Linpeng , Youpeng Zhong , Dapeng Yu

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNAs) for qubit readout. Here we presented a C-band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on a 150 nm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance matching to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third stages enhances the overall stability. Moreover, the pHEMT self-bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only a single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a minimum noise temperature of 4 K and an average gain of 40 dB. We further benchmarked this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.

大规模超导量子计算机需要大量高性能低温低噪声放大器（cryo-LNAs）来进行量子位读出。为此，我们提出了一种c波段单片微波集成电路（MMIC）低温rna。该cryo-LNA基于150 nm砷化镓（GaAs）伪晶高电子迁移率晶体管（pHEMT）工艺，采用三级级联架构实现，其中第一级采用仔细的阻抗匹配来优化噪声和回波损耗。第二阶段和第三阶段采用的负反馈回路的集成增强了整体的稳定性。此外，pHEMT的自偏置和电流复用电路结构有助于降低功耗，并且只需要一条偏置线。cryo-LNA工作在3.6 K的环境温度下，功耗为15 mW，在c波段表现出良好的性能，最低噪声温度为4 K，平均增益为40 dB。我们进一步用超导量子比特对这种cryo-LNA进行基准测试，在没有量子限制参数放大器的帮助下，实现了98.3%的平均单次色散读出保真度。砷化镓低温rna的发展为大规模量子应用提供了必要的技术支持。

{"title":"A C-band cryogenic gallium arsenide low-noise amplifier for quantum applications","authors":"Zechen Guo , Daxiong Sun , Peisheng Huang , Xuandong Sun , Yuefeng Yuan , Jiawei Zhang , Wenhui Huang , Yongqi Liang , Jiawei Qiu , Jiajian Zhang , Ji Chu , Weijie Guo , Ji Jiang , Jingjing Niu , Wenhui Ren , Ziyu Tao , Xiayu Linpeng , Youpeng Zhong , Dapeng Yu","doi":"10.1016/j.chip.2025.100146","DOIUrl":"10.1016/j.chip.2025.100146","url":null,"abstract":"<div><div>Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNAs) for qubit readout. Here we presented a C-band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on a 150 nm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance matching to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third stages enhances the overall stability. Moreover, the pHEMT self-bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only a single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a minimum noise temperature of 4 K and an average gain of 40 dB. We further benchmarked this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 4","pages":"Article 100146"},"PeriodicalIF":7.1,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

N- and p-type sub-10 nm high-performance transistors based on monolayer GeX2 (X = As, Sb) 基于单层GeX2 （X = As, Sb）的N型和p型亚10nm高性能晶体管

Chip

Pub Date : 2025-03-29 DOI: 10.1016/j.chip.2025.100144

Siyu Yang, Hao Shi, Yang Hu, Xinwei Guo, Xiaojia Yuan, Hengze Qu, Haibo Zeng, Shengli Zhang

Exploring silicon alternatives for channel material is crucial for next-generation integrated circuits, two-dimensional (2D) materials are the most promising candidates due to their capability to suppress short-channel effects. In this study, we conducted simulations on the structural and electronic properties of 2D GeX₂ (X = As, Sb), as well as the ballistic transport characteristics of sub-10 nm n- and p-type 2D GeX₂ field effect transistors (FETs) based on first principles. The key metrics in terms of on-state current (I_on), delay time, and power consumption of n-type GeAs₂ and p-type GeSb₂ FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices until the gate length (L_g) is shrunk to 5 nm. Specifically, the I_on of n-type GeAs₂ FET and p-type GeSb₂ FET reaches 2299 and 1480 μA/μm when L_g is 7 nm, surpassing InSe, MoS₂_, and WSe₂ FETs. Our work highlights the potential of 2D GeX₂ in future nanoelectronics.

探索硅通道材料的替代品对于下一代集成电路至关重要，二维（2D）材料是最有希望的候选者，因为它们能够抑制短通道效应。在本研究中，我们基于第一性原理模拟了二维GeX2 （X = As, Sb）的结构和电子特性，以及10 nm以下n型和p型二维GeX2场效应晶体管（fet）的弹道输运特性。在栅极长度（Lg）缩小到5nm之前，n型GeAs2和p型GeSb2 fet的导通电流（Ion）、延迟时间和功耗等关键指标都可以满足国际半导体技术路线图对高性能器件的要求。其中，当Lg为7 nm时，n型GeAs2 FET和p型GeSb2 FET的离子达到2299和1480 μA/μm，超过了InSe、MoS2和WSe2 FET。我们的工作强调了二维GeX2在未来纳米电子学中的潜力。

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引用次数: 0

A high-performance tensor computing unit for deep learning acceleration 用于深度学习加速的高性能张量计算单元

Chip

Pub Date : 2025-03-28 DOI: 10.1016/j.chip.2025.100145

Qiang Zhou , Tieli Sun , Taoran Shen , York Xue

The increasing complexity of neural network applications has led to a demand for higher computational parallelism and more efficient synchronization in artificial intelligence (AI) chips. To achieve higher performance and lower power, a comprehensive and efficient approach is required to compile neural networks for implementation on dedicated hardware. Our first-generation deep learning accelerator, tensor computing unit, was presented with hardware and software solutions. It offered dedicated very long instruction words (VLIWs) instructions and multi-level repeatable direct memory access (DMA). The former lowers the instruction bandwidth requirement and makes it easier to parallelize the index and vector computations. The latter reduces the communication latency between the compute core and the asynchronous DMA, and also greatly alleviates the programming complexity. For operator implementation and optimization, the compiler-based data-flow generator and the instruction macro generator first produced a set of parameterized operators. Then, the tuner-configuration generator pruned the search space and the distributed tuner framework selected the best data-flow pattern and corresponding parameters. Our tensor computing unit supports all the convolution parameters with full-shape dimensions. It can readily select proper operators to achieve 96% of the chip peak performance under certain shapes and find the best performance implementation within limited power. The evaluation of a large number of convolution shapes on our tensor computing unit chip shows the generated operators significantly outperform the hand-written ones, achieving 9% higher normalized performance than CUDA according to the silicon data.

随着神经网络应用的日益复杂，人工智能（AI）芯片对更高的计算并行性和更高效的同步提出了要求。为了实现更高的性能和更低的功耗，需要一种全面有效的方法来编译神经网络以在专用硬件上实现。我们的第一代深度学习加速器张量计算单元给出了硬件和软件解决方案。它提供专用的超长指令字（VLIWs）指令和多级可重复直接存储器访问（DMA）。前者降低了指令带宽要求，使索引和矢量计算更容易并行化。后者减少了计算核心与异步DMA之间的通信延迟，也大大减轻了编程的复杂性。为了实现和优化运算符，基于编译器的数据流生成器和指令宏生成器首先生成一组参数化的运算符。然后，调谐器组态生成器对搜索空间进行剪枝，分布式调谐器框架选择最佳数据流模式和相应参数。我们的张量计算单元支持所有具有全形状维度的卷积参数。它可以很容易地选择合适的算子，在一定的形状下达到96%的芯片峰值性能，并在有限的功率下找到最佳的性能实现。在我们的张量计算单元芯片上对大量卷积形状的评估表明，生成的运算符明显优于手写运算符，根据硅数据，其归一化性能比CUDA高9%。

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引用次数: 0

Polarization reversal enhanced intelligent recognition in two-dimensional MoTe2/GeSe heterostructure 极化反转增强了二维MoTe2/GeSe异质结构的智能识别

Chip

Pub Date : 2025-03-27 DOI: 10.1016/j.chip.2025.100143

Ling Bai , Ziting Yang , Jie Wen , Zifeng Mai , Bin Liu , Duanyang Liu , Penghong Ci , Liyuan Liu , Yiyang Xie , Ziqi Zhou , Yali Yu , Zhongming Wei

Wide-spectral and polarization-sensitive photodetectors are vital for applications in imaging, communication, and intelligent sensing. Although two-dimensional (2D) materials have shown great promise in enhancing the performance of these devices, conventional methods for spectral discrimination often rely on complex designs, such as external filters or multisensor systems, increasing system cost and complexity. Developing simplified devices that integrate spectral and polarization detection remains a key challenge. Here, we demonstrated a 2D MoTe₂/GeSe-based photodetector with wide-spectral photoresponse (400 to 1064 nm) and polarization sensitivity, achieving a responsivity of 1.35 A W⁻¹ and a polarization ratio of 2.23 under 808 nm illumination. The device exhibited a unique 90° polarization reversal between green (532 nm) and red (808 nm), providing a novel mechanism for spectral discrimination. First-principles calculations reveal the polarization reversal phenomenon based on the heterostructure's optical anisotropy. Furthermore, integration with a convolutional neural network enables intelligent traffic signal recognition using polarization-sensitive images. This work highlights the potential of MoTe₂/GeSe heterostructures for next-generation photodetectors, offering compact, multifunctional solutions with integrated spectral and polarization discrimination capabilities.

宽光谱和偏振敏感的光电探测器在成像、通信和智能传感领域的应用至关重要。尽管二维（2D）材料在提高这些器件的性能方面显示出巨大的希望，但传统的光谱识别方法通常依赖于复杂的设计，例如外部滤波器或多传感器系统，从而增加了系统成本和复杂性。开发集成光谱和偏振检测的简化设备仍然是一个关键挑战。在此，我们展示了一种基于MoTe2/ ges2的二维光电探测器，具有宽光谱光响应（400 ~ 1064 nm）和偏振灵敏度，在808 nm照明下实现了1.35 a W−1的响应率和2.23的偏振比。该器件在绿色（532 nm）和红色（808 nm）之间具有独特的90°偏振反转，为光谱识别提供了一种新的机制。第一性原理计算揭示了基于异质结构光学各向异性的极化反转现象。此外，与卷积神经网络的集成使使用偏振敏感图像的智能交通信号识别成为可能。这项工作强调了MoTe2/GeSe异质结构在下一代光电探测器中的潜力，它提供了紧凑、多功能的解决方案，具有集成的光谱和偏振识别能力。

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引用次数: 0