Synergic Surface Modifications of PbS Quantum Dots by Sodium Acetate in Solid-State Ligand Exchange toward Short-Wave Infrared Photodetectors.

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2024-08-21 Epub Date: 2024-08-01 DOI:10.1021/acsami.4c05201
Xiao Wang, Zhulu Song, Haodong Tang, Yiwen Li, Huaying Zhong, Jiufeng Wu, Weichao Wang, Simin Chen, Wenjie Zhang, Fan Fang, Junjie Hao, Dan Wu, Peter Müller-Buschbaum, Leifeng Cao, Zeguo Tang, Jun Tang, Lei Zhang, Kai Wang, Wei Chen
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Abstract

PbS quantum dots (QDs) are promising for short-wave infrared (SWIR) photodetection and imaging. Solid-state ligand exchange (SSLE) is a low-fabrication-threshold QD solid fabrication method. However, QD treatment by SSLE remains challenging in seeking refined surface passivation to achieve the desired device performance. This work investigates using NaAc in the ligand exchange process to enhance the film morphology and electronic coupling configuration of QD solids. By implementing various film and photodetector device characterization studies, we confirm that adding NaAc with a prominent adding ratio of 20 wt % NaAc with tetrabutylammonium iodide (TBAI) in the SSLE leads to an improved film morphology, reduced surface roughness, and decreased trap states in the QD solid films. Moreover, compared to the devices without NaAc treatment, those fabricated with NaAc-treated QD solids exhibit an enhanced performance, including lower dark current density (<100 nA/cm2), faster response speed, higher responsivity, detectivity, and external quantum efficiency (EQE reaching 25%). The discoveries can be insightful in developing efficient, low-cost, and low-fabrication-threshold QD SWIR detection and imager applications.

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醋酸钠在固态配体交换中对 PbS 量子点进行协同表面修饰,以实现短波红外光探测器。
PbS 量子点(QDs)有望用于短波红外(SWIR)光探测和成像。固态配体交换(SSLE)是一种低制造阈值的 QD 固体制造方法。然而,通过 SSLE 对 QD 进行处理,在寻求精细的表面钝化以实现理想的器件性能方面仍具有挑战性。这项工作研究了在配体交换过程中使用 NaAc 来增强 QD 固体的薄膜形态和电子耦合构型。通过对各种薄膜和光电探测器器件进行表征研究,我们证实在 SSLE 中添加 NaAc(NaAc 与碘化四丁基铵(TBAI)的添加比例为 20 wt %)可改善薄膜形态、降低表面粗糙度并减少 QD 固体薄膜中的陷阱态。此外,与未经 NaAc 处理的器件相比,使用 NaAc 处理的 QD 固体制造的器件具有更高的性能,包括更低的暗电流密度 (2)、更快的响应速度、更高的响应度、检测度和外部量子效率(EQE 达到 25%)。这些发现对于开发高效、低成本、低制造阈值的 QD SWIR 检测和成像应用具有重要意义。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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