Surface Passivation of IR Photodetectors Based on InSb/In $${}_{\boldsymbol{1-x}}\mathbf{Al}_{\boldsymbol{x}}$$ Sb Heterostructures

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI:10.3103/s8756699024700274

M. A. Sukhanov, M. S. Aksenov, A. K. Bakarov, I. D. Loshkarev, K. S. Zhuravlev

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Abstract

The methods of passivating the mesastructures of photodetectors based on InSb/In${}_{1-x}$Al${}_{x}$Sb nBn heterostructures grown by molecular-beam epitaxy are studied. The mesastructures are formed by photolithography and liquid etching. Two different dielectrics, Al${}_{2}$O${}_{3}$ and Si${}_{3}$N${}_{4}$, are used to passivate the surface of mesastructures. It is shown that the Si${}_{3}$N${}_{4}$ dielectric efficiently passivates the surface of mesastructures, and the bulk current channel is predominant, whereas the surface leakage current prevails in the Al${}_{2}$O${}_{3}$ passivated mesastructures. At small reverse biases, the correlation between the current and surface area of a mesastructure is violated due to the influence of defects. Modeling the current–voltage characteristics of mesastructures at 77 K shows that the major contribution to the dark current is made by the tunneling current of electrons through the In${}_{1-x}$Al${}_{x}$Sb barrier.

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基于 InSb/In $${}_\{boldsymbol{1-x}}\mathbf{Al}_{\boldsymbol{x}}$ Sb 异质结构的红外光探测器的表面钝化

摘要研究了基于分子束外延生长的 InSb/In${}_{1-x}$Al${}_{x}$Sb nBn 异质结构的光电探测器的中间结构的钝化方法。中间结构是通过光刻和液体蚀刻形成的。两种不同的电介质，Al（{}_{2}\）O（{}_{3}\）和Si（{}_{3}\）N（{}_{4}\）被用来钝化介质结构的表面。研究表明，Si（{}_{3}\）N（{}_{4}\）电介质能有效地钝化介质结构的表面，并且体电流通道占主导地位，而在铝（{}_{2}\）O（{}_{3}\）钝化介质结构中，表面漏电流占主导地位。在较小的反向偏压下，由于缺陷的影响，介质结构的电流和表面积之间的相关性被破坏。对介子结构在 77 K 时的电流-电压特性建模表明，电子通过 In${}_{1-x}$Al${}_{x}$Sb 势垒的隧道电流是暗电流的主要来源。

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来源期刊

Optoelectronics Instrumentation and Data Processing PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

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期刊介绍： The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.