A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-07-30 DOI:10.1109/LED.2024.3435697

Xinran Yang;He Zhu;Yi Zhao;Zubin Chen;Feng Sun;Xi Zhu

引用次数: 0

Abstract

In this letter, a design methodology is presented to generate an upper-stopband transmission zero (TZ) for a bandpass filter (BPF) for improving the selectivity and the stopband suppression performance. Using this method, the TZ can be generated in a very flexible way. As proof of concept, a 30-GHz

${2}^{\text {nd}}-$

order bandpass filter (BPF) is fabricated in 45-nm SOI CMOS technology. The measured insertion loss is less than 1.6 dB, and the upper-stopband suppression is greater than 45 dB. Besides, the footprint, excluding the pads, is only 0.046 mm ² .

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在 45 纳米 SOI CMOS 技术中实现 1.6 分贝插入损耗和 47 分贝上顶带抑制的二阶带通滤波器

本文介绍了一种为带通滤波器（BPF）生成上阻带传输零点（TZ）的设计方法，以提高选择性和阻带抑制性能。利用这种方法，可以非常灵活地生成 TZ。作为概念验证，我们采用 45 纳米 SOI CMOS 技术制造了一个 30-GHz ${2}^{text {nd}}-$ 阶带通滤波器 (BPF)。测量的插入损耗小于 1.6 dB，上频带抑制大于 45 dB。此外，其占地面积（不包括焊盘）仅为 0.046 平方毫米。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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