Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540244
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29","authors":"","doi":"10.1109/LED.2025.3540244","DOIUrl":"https://doi.org/10.1109/LED.2025.3540244","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"525-525"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906363","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540238
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3540238","DOIUrl":"https://doi.org/10.1109/LED.2025.3540238","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"526-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906361","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540236
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3540236","DOIUrl":"https://doi.org/10.1109/LED.2025.3540236","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"519-519"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906356","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540240
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3540240","DOIUrl":"https://doi.org/10.1109/LED.2025.3540240","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"521-522"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906362","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3537721
Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Kelotchi S Figueroa;Alexander McFarland;Parag B. Deotare;Zetian Mi
In the above article [1], there is a correction to author information and funding information. The correct information is found in the byline and the first footnote.
{"title":"Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature”","authors":"Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Kelotchi S Figueroa;Alexander McFarland;Parag B. Deotare;Zetian Mi","doi":"10.1109/LED.2025.3537721","DOIUrl":"https://doi.org/10.1109/LED.2025.3537721","url":null,"abstract":"In the above article <xref>[1]</xref>, there is a correction to author information and funding information. The correct information is found in the byline and the first footnote.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"516-516"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906359","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540242
{"title":"Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications","authors":"","doi":"10.1109/LED.2025.3540242","DOIUrl":"https://doi.org/10.1109/LED.2025.3540242","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"523-524"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906360","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/LED.2025.3540226
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/LED.2025.3540226","DOIUrl":"https://doi.org/10.1109/LED.2025.3540226","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"520-520"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906358","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-03DOI: 10.1109/LED.2025.3531354
Jesun Park;Myounggon Kang
In this letter, we investigated the boosted channel potential (V$_{mathbf {textit {ch}}}$ ) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by $V_{mathbf {{ch}}}$ . In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in V$_{mathbf {textit {ch}}}$ as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting $V_{mathbf {{ch}}}$ as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High V$_{mathbf {textit {ch}}}$ in the selected WL increases the potential difference ($Delta $ V$_{mathbf {textit {ch}}}$ ) between adjacent WLs. Due to structural characteristics, the lateral e-field (E$_{mathbf {m}}$ ) is largest in concave structures, whereas the vertical e-field (E$_{mathbf {textit {ox}}}$ ) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.
{"title":"Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory","authors":"Jesun Park;Myounggon Kang","doi":"10.1109/LED.2025.3531354","DOIUrl":"https://doi.org/10.1109/LED.2025.3531354","url":null,"abstract":"In this letter, we investigated the boosted channel potential (V<inline-formula> <tex-math>$_{mathbf {textit {ch}}}$ </tex-math></inline-formula>) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by <inline-formula> <tex-math>$V_{mathbf {{ch}}}$ </tex-math></inline-formula>. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in V<inline-formula> <tex-math>$_{mathbf {textit {ch}}}$ </tex-math></inline-formula> as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting <inline-formula> <tex-math>$V_{mathbf {{ch}}}$ </tex-math></inline-formula> as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High V<inline-formula> <tex-math>$_{mathbf {textit {ch}}}$ </tex-math></inline-formula> in the selected WL increases the potential difference (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>V<inline-formula> <tex-math>$_{mathbf {textit {ch}}}$ </tex-math></inline-formula>) between adjacent WLs. Due to structural characteristics, the lateral e-field (E<inline-formula> <tex-math>$_{mathbf {m}}$ </tex-math></inline-formula>) is largest in concave structures, whereas the vertical e-field (E<inline-formula> <tex-math>$_{mathbf {textit {ox}}}$ </tex-math></inline-formula>) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"409-411"},"PeriodicalIF":4.1,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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