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Thermal Instability Compensation of Synaptic 3D Flash Memory-Based Hardware Neural Networks with Adaptive Read Bias 基于自适应读取偏置的突触三维闪存硬件神经网络的热不稳定性补偿
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-12 DOI: 10.1109/led.2024.3459615
Jangsaeng Kim, Jiseong Im, Jong-Ho Lee
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引用次数: 0
Highly reliable 4 Mb FeRAM using a newly developed PLZT capacitor with a Bi-doped SRO interlayer 使用新开发的带有双掺杂 SRO 中间层的 PLZT 电容器的高可靠性 4 Mb FeRAM
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-12 DOI: 10.1109/led.2024.3459044
W. Wang, T. Eshita, K. Takai, S. Amari, K. Nakamura, M. Oikawa, N. Sato, S. Ozawa, M. Nakabayashi, S. Mihara, Y. Hikosaka, H. Saito, K. Inoue, K. Nagai
{"title":"Highly reliable 4 Mb FeRAM using a newly developed PLZT capacitor with a Bi-doped SRO interlayer","authors":"W. Wang, T. Eshita, K. Takai, S. Amari, K. Nakamura, M. Oikawa, N. Sato, S. Ozawa, M. Nakabayashi, S. Mihara, Y. Hikosaka, H. Saito, K. Inoue, K. Nagai","doi":"10.1109/led.2024.3459044","DOIUrl":"https://doi.org/10.1109/led.2024.3459044","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppressed Transverse Mode Generation in TF-SAW Resonators based on LiTaO3/Sapphire 基于 LiTaO3/Sapphire 的 TF-SAW 谐振器中的抑制横向模式生成
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-12 DOI: 10.1109/led.2024.3459023
Junyao Shen, Wenfeng Yao, Temesgen Bailie Workie, Quhuan Shen, Qiufeng Xu, Jingfu Bao, Ken-ya Hashimoto
{"title":"Suppressed Transverse Mode Generation in TF-SAW Resonators based on LiTaO3/Sapphire","authors":"Junyao Shen, Wenfeng Yao, Temesgen Bailie Workie, Quhuan Shen, Qiufeng Xu, Jingfu Bao, Ken-ya Hashimoto","doi":"10.1109/led.2024.3459023","DOIUrl":"https://doi.org/10.1109/led.2024.3459023","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4H-SiC NMOSFET-based temperature sensor operating between 14K and 481K 基于 4H-SiC NMOSFET 的温度传感器，工作温度范围为 14K 至 481K
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-12 DOI: 10.1109/led.2024.3459049
Nicola Rinaldi, Alexander May, Mathias Rommel, Rosalba Liguori, Alfredo Rubino, Gian Domenico Licciardo, Luigi Di Benedetto
{"title":"A 4H-SiC NMOSFET-based temperature sensor operating between 14K and 481K","authors":"Nicola Rinaldi, Alexander May, Mathias Rommel, Rosalba Liguori, Alfredo Rubino, Gian Domenico Licciardo, Luigi Di Benedetto","doi":"10.1109/led.2024.3459049","DOIUrl":"https://doi.org/10.1109/led.2024.3459049","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized MFS Stack with N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs 采用掺杂 N 的 TiO2 沟道和掺杂 La 的 HfO2 铁电层的优化 MFS 叠层实现高稳定性 FeFET
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-12 DOI: 10.1109/led.2024.3458999
Xujin Song, Dijiang Sun, Chenxi Yu, Shangze Li, Zheng Zhou, Xiaoyan Liu, Jinfeng Kang
{"title":"Optimized MFS Stack with N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs","authors":"Xujin Song, Dijiang Sun, Chenxi Yu, Shangze Li, Zheng Zhou, Xiaoyan Liu, Jinfeng Kang","doi":"10.1109/led.2024.3458999","DOIUrl":"https://doi.org/10.1109/led.2024.3458999","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Tauc-Lorentz Model for Amorphous Materials with Non-Exponential Band Tails 非指数带尾非晶材料的扩展陶克-洛伦兹模型
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-11 DOI: 10.1109/led.2024.3458392
Yuri Vygranenko, Guilherme Lavareda
{"title":"Extended Tauc-Lorentz Model for Amorphous Materials with Non-Exponential Band Tails","authors":"Yuri Vygranenko, Guilherme Lavareda","doi":"10.1109/led.2024.3458392","DOIUrl":"https://doi.org/10.1109/led.2024.3458392","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-site Crystallization Regulation for Highly Efficient and Stable Perovskite Solar Cells 高效稳定的 Perovskite 太阳能电池的双位结晶调节技术
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-11 DOI: 10.1109/led.2024.3458056
Jianing Xi, Yi Zhang, Hanxiao Gao, Zhuowei Li, Chunyu Liu, Wenbin Guo
{"title":"Dual-site Crystallization Regulation for Highly Efficient and Stable Perovskite Solar Cells","authors":"Jianing Xi, Yi Zhang, Hanxiao Gao, Zhuowei Li, Chunyu Liu, Wenbin Guo","doi":"10.1109/led.2024.3458056","DOIUrl":"https://doi.org/10.1109/led.2024.3458056","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully Integrated Memristive Hodgkin-Huxley Neurons with Homeostatic Plasticity 具有同态可塑性的全集成膜霍奇金-赫胥黎神经元
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-10 DOI: 10.1109/led.2024.3456816
Yue Yang, Xumeng Zhang, Pei Chen, Lingli Cheng, Yanting Ding, Chao Li, Jie Yu, Qi Liu
{"title":"Fully Integrated Memristive Hodgkin-Huxley Neurons with Homeostatic Plasticity","authors":"Yue Yang, Xumeng Zhang, Pei Chen, Lingli Cheng, Yanting Ding, Chao Li, Jie Yu, Qi Liu","doi":"10.1109/led.2024.3456816","DOIUrl":"https://doi.org/10.1109/led.2024.3456816","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Tunneling Light-Emitting Device with Ultra-Narrow Linewidth Emission at Room-Temperature 室温下超窄线宽发射的隧道发光器件
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-10 DOI: 10.1109/led.2024.3456036
Yuanpeng Wu, Yixin Xiao, Kai Sun, Jianyang Xiao, Bowen Tian, Ding Wang, Danhao Wang, Zetian Mi
{"title":"A Tunneling Light-Emitting Device with Ultra-Narrow Linewidth Emission at Room-Temperature","authors":"Yuanpeng Wu, Yixin Xiao, Kai Sun, Jianyang Xiao, Bowen Tian, Ding Wang, Danhao Wang, Zetian Mi","doi":"10.1109/led.2024.3456036","DOIUrl":"https://doi.org/10.1109/led.2024.3456036","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low-Dropout Regulator Integrated with E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors with Superior Uniformity and Stability 一种集成了 E 模式 IGZO 和 D 模式 ITO/IGZO 双层薄膜晶体管的低压差稳压器，具有卓越的均匀性和稳定性
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters
Pub Date : 2024-09-10 DOI: 10.1109/led.2024.3456861
Zuoxu Yu, Fan Yu, Yubo Li, Tingrui Huang, Yuzhen Zhang, Wenting Xu, Wangran Wu, Weifeng Sun
{"title":"A Low-Dropout Regulator Integrated with E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors with Superior Uniformity and Stability","authors":"Zuoxu Yu, Fan Yu, Yubo Li, Tingrui Huang, Yuzhen Zhang, Wenting Xu, Wangran Wu, Weifeng Sun","doi":"10.1109/led.2024.3456861","DOIUrl":"https://doi.org/10.1109/led.2024.3456861","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.9,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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