Pb(Zr0.5Ti0.5)O3-Based Piezoelectric Micromachined Ultrasonic Transducers for High Acoustic Transmission and Reception

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-07-30 DOI:10.1109/LED.2024.3435685

Zixuan Li;Zhikang Li;Yihe Zhao;Jiawei Yuan;Zilong Zhao;Qi Ma;Shaohui Qin;Xuan Shi;Xiaozhang Wang;Libo Zhao

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Abstract

Piezoelectric micromachined ultrasonic transducers (PMUTs) shows great promise in portable medical diagnostic systems and non-contact range finding owing to their miniature size, high acoustic impedance matching with human tissue, low power consumption, and easy integration with ICs. A highly transmitting and receiving PMUTs is developed in this study using Pb(Zr _0.5 Ti _0.5 )O ₃ as the piezoelectric layer, which is fabricated through a low-temperature and high-piezoelectricity Pb(Zr _0.5 Ti _0.5 )O ₃ thin film fabrication technique. The fabricated piezoelectric film features the lowest film-forming temperature

$\le 480~^{\circ }$

C) ever reported, excellent piezoelectric coefficient (15.5 C/m ² ), and lowe dielectric constant (750). Consequently, the developed PMUTs achieved a transmitting sensitivity of 4.72 kPa/V, −6 dB fractional bandwidth of 80.2 %, and high reception signal-to-noise ratio up to 37.3 and 18.9 dB, with and without any amplifier circuits, respectively. Thus, it demonstrated a higher comprehensive performance than previously reported PMUTs with the similar structure. The results of this study may accelerate the development of CMOS-compatible and high-performance PMUTs based on thin PZT film.

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基于 Pb（Zr50Ti50）O3 的压电微机械超声波换能器实现高声波传输和接收

压电微机械超声换能器（PMUTs）具有体积小、与人体组织声阻抗匹配度高、功耗低、易于与集成电路集成等优点，在便携式医疗诊断系统和非接触式测距中大有可为。本研究使用 Pb（Zr0.5Ti0.5）O3 作为压电层，通过低温高压电性 Pb（Zr0.5Ti0.5）O3 薄膜制造技术，开发了一种高发射和接收 PMUT。所制备的压电薄膜具有迄今报道的最低成膜温度（480~^{/circ }$ C）、优异的压电系数（15.5 C/m2）和低介电常数（750）。因此，所开发的 PMUT 在使用和不使用任何放大电路的情况下，分别实现了 4.72 kPa/V 的发射灵敏度、80.2 % 的 -6 dB 分数带宽和高达 37.3 和 18.9 dB 的高接收信噪比。因此，与之前报道过的具有类似结构的 PMUT 相比，它具有更高的综合性能。这项研究的结果可加速开发基于 PZT 薄膜的 CMOS 兼容型高性能 PMUT。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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