Anjali Anjali;James W. Pomeroy;Jr-Tai Chen;Martin Kuball
{"title":"Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs","authors":"Anjali Anjali;James W. Pomeroy;Jr-Tai Chen;Martin Kuball","doi":"10.1109/LED.2024.3435471","DOIUrl":null,"url":null,"abstract":"An electroluminescence (EL) based method is introduced for micrometer-spatial resolution quantitative threshold voltage mapping across transistors, illustrated on GaN HEMTs. The threshold voltage determined using the optical method is confirmed to be consistent with the conventional electrical method that averages a whole device. With this approach, we illustrate spatial variations in threshold voltage along the gate finger width with a spatial resolution of \n<inline-formula> <tex-math>$1~\\mu $ </tex-math></inline-formula>\nm and a voltage resolution of less than 10 mV. Changes in threshold voltage after device stress are shown.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614717/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
An electroluminescence (EL) based method is introduced for micrometer-spatial resolution quantitative threshold voltage mapping across transistors, illustrated on GaN HEMTs. The threshold voltage determined using the optical method is confirmed to be consistent with the conventional electrical method that averages a whole device. With this approach, we illustrate spatial variations in threshold voltage along the gate finger width with a spatial resolution of
$1~\mu $
m and a voltage resolution of less than 10 mV. Changes in threshold voltage after device stress are shown.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
