Hui Yang;Zhe Xu;Kaixi Shi;Jinhua Li;Zhenfeng Jiang;Yingjiao Zhai;Xuan Fang;Zhiyang Wang
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引用次数: 0
Abstract
With the wide application of van der Waals heterojunctions in optoelectronic devices, the interface coupling quality has become one of the important factors affecting the performance of heterojunction devices. Herein, a strongly coupled MoS
2
/CuO heterojunction photodetector was obtained by adjusting the introduction order of the precursors during the plasma-enhanced atomic layer deposition (PEALD). Raman and PL spectrums analysis confirmed that the preferential deposition of oxygen precursors to form strongly coupled interfaces can achieve more efficient carrier separation. Compared with the weakly coupled devices, the strongly coupled MoS
2
/CuO photodetector can achieve an ultrafast rise/decay time of 16/97 ns and a high responsivity of 588.5 A/W. This work provides new research strategies for the development of high-quality heterojunctions in the future.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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