Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2024-07-30 DOI:10.1007/s13391-024-00513-z

Dong-Hee Lee, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Jong-Heon Yang, Chi-Sun Hwang, Sung-Min Yoon

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Abstract

The asymmetrical gate-drain bias stress (GDBS) stability of a mesa-shaped vertical-channel thin-film transistors (VTFTs) was investigated using an In-Ga-Zn–O (IGZO) active layer prepared by atomic-layer deposition. The GDBS measurements were conducted with variations in electrode configurations and overlapped areas between the active and bottom electrode regions. The GDBS stability of the IGZO VTFTs was found to be significantly degraded, when a plasma-damaged electrode was used as the drain electrode, due to the formation of defective channel regions that are more susceptible to the hot carrier effect. To address the effect of plasma-damaged electrode, an ultrathin passivation layer was introduced, resulting in the achievement of VTFTs with excellent and uniform GDBS stability.

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非对称电极几何效应对增强垂直沟道 InGaZnO 薄膜晶体管栅漏偏压稳定性的启示

利用原子层沉积制备的 In-Ga-Zn-O (IGZO) 有源层，研究了网格状垂直沟道薄膜晶体管 (VTFT) 的非对称栅漏偏压 (GDBS) 稳定性。在进行 GDBS 测量时，电极配置以及有源电极区和底部电极区之间的重叠区域都发生了变化。结果发现，当使用等离子体损坏的电极作为漏极时，IGZO VTFT 的 GDBS 稳定性明显降低，原因是形成了缺陷沟道区，更容易受到热载流子效应的影响。为解决等离子体损伤电极的影响，引入了超薄钝化层，从而获得了具有优异和均匀 GDBS 稳定性的 VTFT。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.