Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles

IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-30 DOI:10.1002/pssa.202400360
Vladimir V. Voronkov, Robert Falster
{"title":"Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles","authors":"Vladimir V. Voronkov, Robert Falster","doi":"10.1002/pssa.202400360","DOIUrl":null,"url":null,"abstract":"Reported depth profiles of hydrogen in plasma‐exposed n‐Si samples can be fitted with a simple model of hydrogen transport by negative and neutral species (H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup>) accompanied by a reversible formation of hydrogen–donor pairs (HD) and by an irreversible production of mobile dimers H<jats:sub>2A</jats:sub>—in particular by a bulk pairing reaction of the H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup> species. Contrary to a complicated behavior of hydrogen found in p‐Si (with multiple independent states for positive ions and passivated boron), the situation in n‐Si appears to be much simpler as only single states for H<jats:sup>−</jats:sup>, H<jats:sup>0</jats:sup>, and HD are sufficient for profile reproduction. The parameters deduced from the profiles are the diffusivity of H<jats:sup>−</jats:sup>, the characteristic electron concentration marking equal contributions of H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup> into hydrogen transport, and the diffusivity of H<jats:sub>2A</jats:sub> dimers (in the available temperature range 120–225 °C).","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"22 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400360","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Reported depth profiles of hydrogen in plasma‐exposed n‐Si samples can be fitted with a simple model of hydrogen transport by negative and neutral species (H and H0) accompanied by a reversible formation of hydrogen–donor pairs (HD) and by an irreversible production of mobile dimers H2A—in particular by a bulk pairing reaction of the H and H0 species. Contrary to a complicated behavior of hydrogen found in p‐Si (with multiple independent states for positive ions and passivated boron), the situation in n‐Si appears to be much simpler as only single states for H, H0, and HD are sufficient for profile reproduction. The parameters deduced from the profiles are the diffusivity of H, the characteristic electron concentration marking equal contributions of H and H0 into hydrogen transport, and the diffusivity of H2A dimers (in the available temperature range 120–225 °C).
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
从内扩散曲线推断正硅中氢物种的特性
等离子体暴露的 n-Si 样品中氢的深度剖面图可以用一个简单的模型来拟合,即氢在负离子和中性离子(H- 和 H0)的传输过程中,伴随着氢-供体对(HD)的可逆形成和移动二聚体 H2A 的不可逆生成--特别是通过 H- 和 H0 的大量配对反应。与 p 型硅中复杂的氢行为(正离子和钝化硼的多个独立状态)相反,n 型硅中的情况似乎要简单得多,因为只有 H-、H0 和 HD 的单一状态就足以再现剖面。从剖面图中推导出的参数包括 H- 的扩散率、H- 和 H0 对氢传输的贡献相等时的特征电子浓度以及 H2A 二聚体的扩散率(在 120-225 ℃ 的可用温度范围内)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.70
自引率
5.00%
发文量
393
审稿时长
2 months
期刊介绍: The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.
期刊最新文献
Plasma‐Assisted Preparation and Properties of Chitosan‐Based Magnetic Hydrogels Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer Advancements in Piezoelectric‐Enabled Devices for Optical Communication Structural Distortions and Short‐Range Magnetism in a Honeycomb Iridate Cu3ZnIr2O6 Enhancing Reliability and Regeneration of Single Passivated Emitter Rear Contact Solar Cell Modules through Alternating Current Power Application to Mitigate Light and Elevated Temperature‐Induced Degradation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1