{"title":"Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles","authors":"Vladimir V. Voronkov, Robert Falster","doi":"10.1002/pssa.202400360","DOIUrl":null,"url":null,"abstract":"Reported depth profiles of hydrogen in plasma‐exposed n‐Si samples can be fitted with a simple model of hydrogen transport by negative and neutral species (H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup>) accompanied by a reversible formation of hydrogen–donor pairs (HD) and by an irreversible production of mobile dimers H<jats:sub>2A</jats:sub>—in particular by a bulk pairing reaction of the H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup> species. Contrary to a complicated behavior of hydrogen found in p‐Si (with multiple independent states for positive ions and passivated boron), the situation in n‐Si appears to be much simpler as only single states for H<jats:sup>−</jats:sup>, H<jats:sup>0</jats:sup>, and HD are sufficient for profile reproduction. The parameters deduced from the profiles are the diffusivity of H<jats:sup>−</jats:sup>, the characteristic electron concentration marking equal contributions of H<jats:sup>−</jats:sup> and H<jats:sup>0</jats:sup> into hydrogen transport, and the diffusivity of H<jats:sub>2A</jats:sub> dimers (in the available temperature range 120–225 °C).","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"22 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400360","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Reported depth profiles of hydrogen in plasma‐exposed n‐Si samples can be fitted with a simple model of hydrogen transport by negative and neutral species (H− and H0) accompanied by a reversible formation of hydrogen–donor pairs (HD) and by an irreversible production of mobile dimers H2A—in particular by a bulk pairing reaction of the H− and H0 species. Contrary to a complicated behavior of hydrogen found in p‐Si (with multiple independent states for positive ions and passivated boron), the situation in n‐Si appears to be much simpler as only single states for H−, H0, and HD are sufficient for profile reproduction. The parameters deduced from the profiles are the diffusivity of H−, the characteristic electron concentration marking equal contributions of H− and H0 into hydrogen transport, and the diffusivity of H2A dimers (in the available temperature range 120–225 °C).
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.