Design of High-Performance UV-Visible Broadband Photodetector Using Cd-Doped ZnO/ZnO Thin-Film Heterostructure

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-07-31 DOI:10.1109/TED.2024.3433315

Chiru Deepak Kalepu;Vasanthi Kondepati;K. Moatemsu Aier;Jay Chandra Dhar

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Abstract

Cd (3%)-doped ZnO TF/ZnO TF heterostructure (HS) was fabricated and studied for UV-Visible broadband photodetection application. X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) images confirmed the structural and morphological integrity of the HS. The HS showed better device performance both in UV and visible regions when compared with a reference ZnO TF sample. Enhancement in absorption intensity due to replacement of Zn ions by larger Cd ions and large photocurrent generation due to increase in carrier concentration via doping can be credited for the improved performance of the hybrid HS. Thus, achieving high spectral responsivity, R

$_{\lambda }$

[20.5 A/W (UV), 18 A/W (visible)] and fast photoresponse [

${T}_{\text {rise}} =0.31$

${T}_{\text {fall}} =0.53$

s (UV) and

${T}_{\text {rise}} =0.27$

${T}_{\text {fall}} =0.29$

s (visible)] from the hybrid sample.

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利用掺镉氧化锌/氧化锌薄膜异质结构设计高性能紫外-可见光宽带光电探测器

制备并研究了掺杂镉（3%）的 ZnO TF/ZnO TF 异质结构（HS），用于紫外-可见光宽带光电探测应用。X 射线衍射（XRD）和场发射扫描电子显微镜（FESEM）图像证实了 HS 结构和形态的完整性。与参考 ZnO TF 样品相比，HS 在紫外和可见光区域都显示出更好的器件性能。混合 HS 性能的提高归功于用较大的镉离子取代锌离子而增强的吸收强度，以及通过掺杂增加载流子浓度而产生的较大光电流。因此，混合样品实现了高光谱响应率 R $_{\lambda }$ [20.5 A/W (紫外), 18 A/W (可见光)] 和快速光响应 [${T}_{\text {rise}} =0.31$ s, ${T}_{\text {fall}} =0.53$ s (紫外) 和 ${T}_{\text {rise}} =0.27$ s, ${T}_{\text {fall}} =0.29$ s (可见光)]。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.