Pub Date : 2025-01-24DOI: 10.1109/TED.2025.3530056
{"title":"Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications","authors":"","doi":"10.1109/TED.2025.3530056","DOIUrl":"https://doi.org/10.1109/TED.2025.3530056","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"943-944"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852533","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1109/TED.2025.3525821
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2025.3525821","DOIUrl":"https://doi.org/10.1109/TED.2025.3525821","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852535","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1109/TED.2025.3530000
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TED.2025.3530000","DOIUrl":"https://doi.org/10.1109/TED.2025.3530000","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"946-947"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852531","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1109/TED.2025.3525819
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2025.3525819","DOIUrl":"https://doi.org/10.1109/TED.2025.3525819","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852534","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1109/TED.2025.3530057
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29","authors":"","doi":"10.1109/TED.2025.3530057","DOIUrl":"https://doi.org/10.1109/TED.2025.3530057","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"945-945"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852530","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon photomultipliers (SiPMs) fabricated using standard CMOS processes offer the advantages of compatibility with on-chip digital circuits, making them promising candidates among low-photon flux sensors. However, the high noise and low-photon detection efficiency (PDE) of CMOS SiPMs have limited their widespread adoption. Here, we present a novel SiPM obtained within a standard 0.11-$mu $ m CMOS process. We report how guard ring (GR) width and distance from shallow trench isolation (STI) may affect the noise performance, and we optimize for them. The final device demonstrates performance that is competitive with both custom-based commercial technologies and other CMOS-based SiPMs, featuring an unprecedented peak PDE of 62% at 420 nm, a dark count rate (DCR) of $mathbf {text {(}{174}pm {7}text {)}}$ kcps/mm$mathbf {^{{2}}}$ , a gain of $mathbf {text {(}{2}.{0}pm {0}.{2}text {)}times {10}^{{6}}}$ and a single-photon time resolution (SPTR) of $mathbf {text {(}{74}pm {3} text {)}}$ ps [full width at half maximum (FWHM)] at an excess bias voltage of 3 V.
{"title":"A Low-Noise High-Photon Detection Efficiency Silicon Photomultiplier in 0.11-μm CMOS","authors":"Nicola D’Ascenzo;Jingbin Chen;Hui Lao;Daniele Passaretti;Emanuele Antonecchia;Yuexuan Hua;Yuqing Liu;Rui Zheng;Qingguo Xie","doi":"10.1109/TED.2024.3520533","DOIUrl":"https://doi.org/10.1109/TED.2024.3520533","url":null,"abstract":"Silicon photomultipliers (SiPMs) fabricated using standard CMOS processes offer the advantages of compatibility with on-chip digital circuits, making them promising candidates among low-photon flux sensors. However, the high noise and low-photon detection efficiency (PDE) of CMOS SiPMs have limited their widespread adoption. Here, we present a novel SiPM obtained within a standard 0.11-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m CMOS process. We report how guard ring (GR) width and distance from shallow trench isolation (STI) may affect the noise performance, and we optimize for them. The final device demonstrates performance that is competitive with both custom-based commercial technologies and other CMOS-based SiPMs, featuring an unprecedented peak PDE of 62% at 420 nm, a dark count rate (DCR) of <inline-formula> <tex-math>$mathbf {text {(}{174}pm {7}text {)}}$ </tex-math></inline-formula> kcps/mm<inline-formula> <tex-math>$mathbf {^{{2}}}$ </tex-math></inline-formula>, a gain of <inline-formula> <tex-math>$mathbf {text {(}{2}.{0}pm {0}.{2}text {)}times {10}^{{6}}}$ </tex-math></inline-formula> and a single-photon time resolution (SPTR) of <inline-formula> <tex-math>$mathbf {text {(}{74}pm {3} text {)}}$ </tex-math></inline-formula> ps [full width at half maximum (FWHM)] at an excess bias voltage of 3 V.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"769-777"},"PeriodicalIF":2.9,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1109/TED.2024.3519062
Krzysztof Jóźwikowski;Alina Jóźwikowska
Using a 2-D energy band model for electrons on metal surfaces, the value of surface electrical potential was determined. This potential depends on the work function, the concentration of conduction electrons in the metal, and the electron effective mass in surface 2-D band. The spatial distributions of electrical potential were calculated in thermal equilibrium in cylindrical structures of different semiconductors with Al contacts and considered surface states that accumulate surface charge. The electrical potential difference between the metal surface and the interior of the semiconductor constitutes the Schottky barrier (SB). The results of our calculations are in good agreement with the experimental data and confirm the fact that simple Schottky-Mott theory cannot be used to calculate the height of the SB. Calculations were performed for the structure Hg0.78Cd0.22Te at ${T} =77$ K, as well as CdTe and GaAs at ${T} =300$ K. The estimated effective mass of electrons in the surface 2-D band for aluminum is ${m}_{e}approx {1.16}{m}_{{0}}$ .
{"title":"Proposal of a Simple Numerical Method for Determining the Height of the Schottky Barrier at Metal–Semiconductor Junctions","authors":"Krzysztof Jóźwikowski;Alina Jóźwikowska","doi":"10.1109/TED.2024.3519062","DOIUrl":"https://doi.org/10.1109/TED.2024.3519062","url":null,"abstract":"Using a 2-D energy band model for electrons on metal surfaces, the value of surface electrical potential was determined. This potential depends on the work function, the concentration of conduction electrons in the metal, and the electron effective mass in surface 2-D band. The spatial distributions of electrical potential were calculated in thermal equilibrium in cylindrical structures of different semiconductors with Al contacts and considered surface states that accumulate surface charge. The electrical potential difference between the metal surface and the interior of the semiconductor constitutes the Schottky barrier (SB). The results of our calculations are in good agreement with the experimental data and confirm the fact that simple Schottky-Mott theory cannot be used to calculate the height of the SB. Calculations were performed for the structure Hg0.78Cd0.22Te at <inline-formula> <tex-math>${T} =77$ </tex-math></inline-formula> K, as well as CdTe and GaAs at <inline-formula> <tex-math>${T} =300$ </tex-math></inline-formula> K. The estimated effective mass of electrons in the surface 2-D band for aluminum is <inline-formula> <tex-math>${m}_{e}approx {1.16}{m}_{{0}}$ </tex-math></inline-formula>.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"742-748"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1109/TED.2024.3521920
Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu
The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (${P}_{text {r}}$ ) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a $2{P}_{text {r}}$ of $44~mu $ C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for $10^{{4}}$ -$mu $ m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x${10}^{{5}}$ cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.
{"title":"Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films","authors":"Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu","doi":"10.1109/TED.2024.3521920","DOIUrl":"https://doi.org/10.1109/TED.2024.3521920","url":null,"abstract":"The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a <inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$44~mu $ </tex-math></inline-formula>C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x<inline-formula> <tex-math>${10}^{{5}}$ </tex-math></inline-formula> cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"807-812"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Filament-free bulk resistive-switching random access memory (RRAM) devices have been proposed to offer multilevel conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature-dependent I–V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.
{"title":"Modeling of Conduction Mechanism in Filament-Free Multilayer Bulk RRAM","authors":"Yucheng Zhou;Ashwani Kumar;Jaeseoung Park;Yuyi Zhang;Yue Zhou;Seonghyun Kim;Ertugrul Cubukcu;Duygu Kuzum","doi":"10.1109/TED.2024.3521953","DOIUrl":"https://doi.org/10.1109/TED.2024.3521953","url":null,"abstract":"Filament-free bulk resistive-switching random access memory (RRAM) devices have been proposed to offer multilevel conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature-dependent I–V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"646-652"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.
{"title":"Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods","authors":"Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo","doi":"10.1109/TED.2024.3523263","DOIUrl":"https://doi.org/10.1109/TED.2024.3523263","url":null,"abstract":"The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"653-658"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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