Pub Date : 2025-02-28DOI: 10.1109/TED.2024.3520276
Kurtis Raymond;Fabrice Retiere;Harry Lewis;Andrea Capra;Duncan McCarthy;Austin de St Croix;Giacomo Gallina;Joe McLaughlin;Juliette Martin;Nicolas Massacret;Paolo Agnes;Ryan Underwood;Seraphim Koulosousas;Peter Margetak
Presents corrections to the paper, Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”.
{"title":"Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”","authors":"Kurtis Raymond;Fabrice Retiere;Harry Lewis;Andrea Capra;Duncan McCarthy;Austin de St Croix;Giacomo Gallina;Joe McLaughlin;Juliette Martin;Nicolas Massacret;Paolo Agnes;Ryan Underwood;Seraphim Koulosousas;Peter Margetak","doi":"10.1109/TED.2024.3520276","DOIUrl":"https://doi.org/10.1109/TED.2024.3520276","url":null,"abstract":"Presents corrections to the paper, Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1541-1541"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908471","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536347
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2025.3536347","DOIUrl":"https://doi.org/10.1109/TED.2025.3536347","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908474","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536339
{"title":"IEEE Transactions on Electron Devices Publication Information","authors":"","doi":"10.1109/TED.2025.3536339","DOIUrl":"https://doi.org/10.1109/TED.2025.3536339","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908479","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536343
{"title":"Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29","authors":"","doi":"10.1109/TED.2025.3536343","DOIUrl":"https://doi.org/10.1109/TED.2025.3536343","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1545-1545"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908477","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536341
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TED.2025.3536341","DOIUrl":"https://doi.org/10.1109/TED.2025.3536341","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1543-1544"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908467","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536345
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TED.2025.3536345","DOIUrl":"https://doi.org/10.1109/TED.2025.3536345","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1546-1547"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908478","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-28DOI: 10.1109/TED.2025.3536349
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TED.2025.3536349","DOIUrl":"https://doi.org/10.1109/TED.2025.3536349","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1542-1542"},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908468","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-19DOI: 10.1109/TED.2025.3539640
Hyoseok Kim;Ilho Myeong;Seunghyun Kim;Sungduk Hong;Sung Jin Kim;Wanki Kim;Daewon Ha;Dae Sin Kim
In this study, we investigated the read-after-write-delay (RAWD) phenomenon in FeFETs by considering the influence of trap dynamics on the device characteristics. First of all, it was confirmed that it is necessary to interpret the RAWD phenomenon through bulk trap. Through extensive simulations, we also established a quantitative relationship between RAWD and bulk trap properties, such as trap level and trap density. The results indicate that both trap density and trap level play a significant role in determining the variation in ${V} _{t}$ with delay time, which in turn affects the memory window (MW) of the device. Finally, we provide guidelines on the characteristics of HfO2-based ferroelectric materials that are required to meet the MW and intrinsic speed required for various FeFET applications.
{"title":"Influence of Bulk Trap Properties in HfO₂-Based Ferroelectric Layers on the Transient Dynamics of Ferroelectric Field-Effect Transistors","authors":"Hyoseok Kim;Ilho Myeong;Seunghyun Kim;Sungduk Hong;Sung Jin Kim;Wanki Kim;Daewon Ha;Dae Sin Kim","doi":"10.1109/TED.2025.3539640","DOIUrl":"https://doi.org/10.1109/TED.2025.3539640","url":null,"abstract":"In this study, we investigated the read-after-write-delay (RAWD) phenomenon in FeFETs by considering the influence of trap dynamics on the device characteristics. First of all, it was confirmed that it is necessary to interpret the RAWD phenomenon through bulk trap. Through extensive simulations, we also established a quantitative relationship between RAWD and bulk trap properties, such as trap level and trap density. The results indicate that both trap density and trap level play a significant role in determining the variation in <inline-formula> <tex-math>${V} _{t}$ </tex-math></inline-formula> with delay time, which in turn affects the memory window (MW) of the device. Finally, we provide guidelines on the characteristics of HfO2-based ferroelectric materials that are required to meet the MW and intrinsic speed required for various FeFET applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1125-1130"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we investigated the effects of cell variations, specifically the variations in gate length (${L}_{text {g}}$ ), spacer length (${L}_{text {s}}$ ), filler oxide thickness (${T}_{text {f}}$ ), channel thickness (${T}_{text {ch}}$ ), tunneling oxide thickness (${T}_{text {tox}}$ ), charge trap nitride thickness (${T}_{text {ctn}}$ ), and blocking oxide thickness (${T}_{text {box}}$ ), on the z-direction interference (Z-interference) in charge-trap-based 3-D NAND flash memory. Most previous studies have primarily focused on Z-interference degradation caused by the physical scaling of Z-dimensions, which has become a major obstacle in developing advanced multilevel cell technologies such as quad-level cell (QLC) and penta-level cell (PLC). However, with the physical scaling issue, the limitations of the fabrication process are causing cell variation. Nevertheless, research on Z-interference resulting from cell variation remains insufficient in existing studies. Therefore, we analyzed the impact of cell variation on threshold voltage (${V}_{text {th}}$ ) distribution through the Monte Carlo simulation, incorporating technology computer-aided design (TCAD) and experimental data. These results not only offer a comprehensive understanding of Z-interference but also provide valuable insights for formulating process design guidelines.
{"title":"Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory","authors":"Sangmin Ahn;Hyungjun Jo;Sechun Park;Jongwoo Kim;Hyungcheol Shin","doi":"10.1109/TED.2025.3534187","DOIUrl":"https://doi.org/10.1109/TED.2025.3534187","url":null,"abstract":"In this article, we investigated the effects of cell variations, specifically the variations in gate length (<inline-formula> <tex-math>${L}_{text {g}}$ </tex-math></inline-formula>), spacer length (<inline-formula> <tex-math>${L}_{text {s}}$ </tex-math></inline-formula>), filler oxide thickness (<inline-formula> <tex-math>${T}_{text {f}}$ </tex-math></inline-formula>), channel thickness (<inline-formula> <tex-math>${T}_{text {ch}}$ </tex-math></inline-formula>), tunneling oxide thickness (<inline-formula> <tex-math>${T}_{text {tox}}$ </tex-math></inline-formula>), charge trap nitride thickness (<inline-formula> <tex-math>${T}_{text {ctn}}$ </tex-math></inline-formula>), and blocking oxide thickness (<inline-formula> <tex-math>${T}_{text {box}}$ </tex-math></inline-formula>), on the z-direction interference (Z-interference) in charge-trap-based 3-D NAND flash memory. Most previous studies have primarily focused on Z-interference degradation caused by the physical scaling of Z-dimensions, which has become a major obstacle in developing advanced multilevel cell technologies such as quad-level cell (QLC) and penta-level cell (PLC). However, with the physical scaling issue, the limitations of the fabrication process are causing cell variation. Nevertheless, research on Z-interference resulting from cell variation remains insufficient in existing studies. Therefore, we analyzed the impact of cell variation on threshold voltage (<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>) distribution through the Monte Carlo simulation, incorporating technology computer-aided design (TCAD) and experimental data. These results not only offer a comprehensive understanding of Z-interference but also provide valuable insights for formulating process design guidelines.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1141-1145"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-17DOI: 10.1109/TED.2025.3535843
V. G. Danilov;V. D. Borisov
In this article, we propose a numerical method for calculating solutions of the PDE (the heat equation for the cathode temperature and the continuity equation for the current density inside and outside the cathode) with discontinuous flux at the emission surface of a cathode placed in a vacuum. The discontinuity of the flux appears because of the Nottingham effect and tunneling of emitting electrons. In the present article, this approach is applied to mathematical modeling of field emission from a conic silicon cathode of small size (about ten micrometers) to a vacuum, but can be used in other problems with similar types of flux jumps.
{"title":"Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum","authors":"V. G. Danilov;V. D. Borisov","doi":"10.1109/TED.2025.3535843","DOIUrl":"https://doi.org/10.1109/TED.2025.3535843","url":null,"abstract":"In this article, we propose a numerical method for calculating solutions of the PDE (the heat equation for the cathode temperature and the continuity equation for the current density inside and outside the cathode) with discontinuous flux at the emission surface of a cathode placed in a vacuum. The discontinuity of the flux appears because of the Nottingham effect and tunneling of emitting electrons. In the present article, this approach is applied to mathematical modeling of field emission from a conic silicon cathode of small size (about ten micrometers) to a vacuum, but can be used in other problems with similar types of flux jumps.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1462-1468"},"PeriodicalIF":2.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：