Pub Date : 2025-01-03DOI: 10.1109/TED.2024.3516223
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3516223","DOIUrl":"https://doi.org/10.1109/TED.2024.3516223","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10823084","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-03DOI: 10.1109/TED.2024.3516221
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3516221","DOIUrl":"https://doi.org/10.1109/TED.2024.3516221","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10821524","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-18DOI: 10.1109/TED.2024.3509384
Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi
This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.
{"title":"Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure","authors":"Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi","doi":"10.1109/TED.2024.3509384","DOIUrl":"https://doi.org/10.1109/TED.2024.3509384","url":null,"abstract":"This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"459-466"},"PeriodicalIF":2.9,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-17DOI: 10.1109/TED.2024.3506498
Jeonghwan Jang;Mincheol Shin
In this work, we explore the viability of employing protruding top electrodes (PEs) and utilizing surface roughness (SR) for enhancing switching performance in resistive random access memory (RRAM) devices by conducting comprehensive multiphysics simulations. We demonstrate the successful enhancement of the on/off ratio and a reduction in the reset time through the application of PE. Furthermore, we validate the potential for strategically utilizing SR as an approach for performance improvement of RRAM devices. The results presented in this study could be utilized as a guideline for optimizing RRAM switching characteristics.
{"title":"Improvement of Switching Performance of RRAM Through Protruding Top Electrode and Utilizing Surface Roughness: Multiphysics Simulations","authors":"Jeonghwan Jang;Mincheol Shin","doi":"10.1109/TED.2024.3506498","DOIUrl":"https://doi.org/10.1109/TED.2024.3506498","url":null,"abstract":"In this work, we explore the viability of employing protruding top electrodes (PEs) and utilizing surface roughness (SR) for enhancing switching performance in resistive random access memory (RRAM) devices by conducting comprehensive multiphysics simulations. We demonstrate the successful enhancement of the on/off ratio and a reduction in the reset time through the application of PE. Furthermore, we validate the potential for strategically utilizing SR as an approach for performance improvement of RRAM devices. The results presented in this study could be utilized as a guideline for optimizing RRAM switching characteristics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"253-258"},"PeriodicalIF":2.9,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The single-mode avalanche energy ( ${E}_{text {as}}text {)}$ evaluated from the unclamped inductive-switching (UIS) test has been used in many application notes and literature as the ruggedness index of a transistor. The inductance is the key parameter for ${E}_{text {as}}$ calculation. From the in-circuit measurement, the inductance at the channel turn-off time ( ${t}_{text {off}}text {)}$ is found smaller than the default inductance for the power transistor under the UIS test. However, most UIS testers still use the default inductance to calculate ${E}_{text {as}}$ . In this article, whether the inductance can keep constant during ${t}_{text {off}}$ for any transistor under any test condition of UIS and why it is smaller than the default inductance during ${t}_{text {off}}$ for air core inductors is investigated. Without the ferrite core, the magnetization (M) of the air core inductor during the UIS test is caused by the eddy currents, which increase with increasing current and decrease with decreasing current linearly. Therefore, the differential magnetization (dM/dH) is constant, resulting in two different inductances during channel turn-on time ( ${t}_{text {on}}text {)}$ and turn-off time ${t}_{text {off}}$ .
{"title":"In-Circuit Inductance Measurement to Correct the Single-Pulse Avalanche Energy (Eas) of Transistor Under the Unclamped Inductive-Switching (UIS) Test","authors":"Jian-Hsing Lee;Ching-Ho Li;Chih-Cherng Liao;Gong-Kai Lin;Yu-Sheng Chiu;Chieh-Yao Chuang;Ke-Horng Chen","doi":"10.1109/TED.2024.3509398","DOIUrl":"https://doi.org/10.1109/TED.2024.3509398","url":null,"abstract":"The single-mode avalanche energy (\u0000<inline-formula> <tex-math>${E}_{text {as}}text {)}$ </tex-math></inline-formula>\u0000 evaluated from the unclamped inductive-switching (UIS) test has been used in many application notes and literature as the ruggedness index of a transistor. The inductance is the key parameter for \u0000<inline-formula> <tex-math>${E}_{text {as}}$ </tex-math></inline-formula>\u0000 calculation. From the in-circuit measurement, the inductance at the channel turn-off time (\u0000<inline-formula> <tex-math>${t}_{text {off}}text {)}$ </tex-math></inline-formula>\u0000 is found smaller than the default inductance for the power transistor under the UIS test. However, most UIS testers still use the default inductance to calculate \u0000<inline-formula> <tex-math>${E}_{text {as}}$ </tex-math></inline-formula>\u0000. In this article, whether the inductance can keep constant during \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000 for any transistor under any test condition of UIS and why it is smaller than the default inductance during \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000 for air core inductors is investigated. Without the ferrite core, the magnetization (M) of the air core inductor during the UIS test is caused by the eddy currents, which increase with increasing current and decrease with decreasing current linearly. Therefore, the differential magnetization (dM/dH) is constant, resulting in two different inductances during channel turn-on time (\u0000<inline-formula> <tex-math>${t}_{text {on}}text {)}$ </tex-math></inline-formula>\u0000 and turn-off time \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"317-322"},"PeriodicalIF":2.9,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article focuses on investigating the total ionizing dose (TID) effects of $beta $ -Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of $beta $ -Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of $beta $ -Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of $beta $ -Ga2O3 SBD devices.
{"title":"Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions","authors":"Weili Fu;Teng Ma;Yuangang Wang;Xing Li;Zhifeng Lei;Jinbin Wang;Hongjia Song;Chao Peng;Zhangang Zhang;Hong Zhang;Liang He;Tao Xiao;Daoyou Guo;Xiangli Zhong","doi":"10.1109/TED.2024.3505847","DOIUrl":"https://doi.org/10.1109/TED.2024.3505847","url":null,"abstract":"This article focuses on investigating the total ionizing dose (TID) effects of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"147-153"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/TED.2024.3502032
Zefu Zhao;Yu-Tsung Liao;Yu-Rui Chen;Yun-Wen Chen;Wan-Hsuan Hsieh;Jer-Fu Wang;Yu-An Chen;Hao-Yi Lu;Wei-Teng Hsu;Dai-Ying Lee;Ming-Hsiu Lee;C. W. Liu
Metal-ferroelectric-metal (MFM) capacitors with flat amorphous TiN are demonstrated to achieve the c-axis of orthorhombic phase (o-phase) well-aligned along the deposition direction, uniform electric field, negligible fatigue, and a high remanent polarization (2Pr) of $62 ; mu $ C/cm2. The large lattice misfit between crystalline TiN and Hf0.5Zr0.5O2 (HZO) creates a larger barrier to form the o-phase HZO as compared to the amorphous TiN underlayer. Using chemical–mechanical polishing (CMP) can obtain a 0.3 nm roughness flat TiN, measured by atomic force microscopy (AFM). HZO on flat amorphous TiN exhibits a uniform and high breakdown field (EBD) of 4.8/−5.1 MV/cm for positive/negative voltage. A flat TiN mitigates the formation of oxygen vacancies (Vo) as compared to the rough TiN due to the weak and uniform electric field with few local extremes in HZO. After 4E12 endurance cycles, the HZO on the flat TiN exhibits a high final 2Pr of $56 ; mu $ C/cm2 due to small dipole pinning by V $_{text {o}}^{{2}+}$ . This work demonstrates the way to achieve uniformly high 2Pr, large EBD, and high endurance by the flat amorphous TiN.
{"title":"C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance","authors":"Zefu Zhao;Yu-Tsung Liao;Yu-Rui Chen;Yun-Wen Chen;Wan-Hsuan Hsieh;Jer-Fu Wang;Yu-An Chen;Hao-Yi Lu;Wei-Teng Hsu;Dai-Ying Lee;Ming-Hsiu Lee;C. W. Liu","doi":"10.1109/TED.2024.3502032","DOIUrl":"https://doi.org/10.1109/TED.2024.3502032","url":null,"abstract":"Metal-ferroelectric-metal (MFM) capacitors with flat amorphous TiN are demonstrated to achieve the c-axis of orthorhombic phase (o-phase) well-aligned along the deposition direction, uniform electric field, negligible fatigue, and a high remanent polarization (2Pr) of \u0000<inline-formula> <tex-math>$62 ; mu $ </tex-math></inline-formula>\u0000C/cm2. The large lattice misfit between crystalline TiN and Hf0.5Zr0.5O2 (HZO) creates a larger barrier to form the o-phase HZO as compared to the amorphous TiN underlayer. Using chemical–mechanical polishing (CMP) can obtain a 0.3 nm roughness flat TiN, measured by atomic force microscopy (AFM). HZO on flat amorphous TiN exhibits a uniform and high breakdown field (EBD) of 4.8/−5.1 MV/cm for positive/negative voltage. A flat TiN mitigates the formation of oxygen vacancies (Vo) as compared to the rough TiN due to the weak and uniform electric field with few local extremes in HZO. After 4E12 endurance cycles, the HZO on the flat TiN exhibits a high final 2Pr of \u0000<inline-formula> <tex-math>$56 ; mu $ </tex-math></inline-formula>\u0000C/cm2 due to small dipole pinning by V\u0000<inline-formula> <tex-math>$_{text {o}}^{{2}+}$ </tex-math></inline-formula>\u0000. This work demonstrates the way to achieve uniformly high 2Pr, large EBD, and high endurance by the flat amorphous TiN.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"222-227"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/TED.2024.3513945
Chetan Kumar Dabhi;Girish Pahwa;Sayeef Salahuddin;Chenming Hu
In this article, Boltzmann statistics consideration is added to the charge-deficit large-signal non-quasi-static (NQS) model. The new model eliminates the nonphysical negative drain transport (as opposed to displacement) current at large drain voltage and under fast gate voltage ( $text {V}_{text {gs}}$ ) turn-on. The new model agrees well with the technology computer-aided design (TCAD) simulation data for turn-on and turnoff transients and for all the drain voltage ( $text {V}_{text {ds}}$ ) values, small or large. In addition, the model captures the temperature dependence of channel charge partition between source charge and drain charge in agreement with TCAD simulation results, thus reconfirming the importance of including Boltzmann statistics in NQS models. The new Boltzmann-aware NQS model is implemented in Verilog-A and tested using commercial circuit simulators. It is intended for the simulation of large-signal and small-signal NQS, and high-speed analog, logic and memory circuits.
{"title":"Boltzmann-Statistics-Aware Non-Quasi-Static-Charge Model for IC Simulations","authors":"Chetan Kumar Dabhi;Girish Pahwa;Sayeef Salahuddin;Chenming Hu","doi":"10.1109/TED.2024.3513945","DOIUrl":"https://doi.org/10.1109/TED.2024.3513945","url":null,"abstract":"In this article, Boltzmann statistics consideration is added to the charge-deficit large-signal non-quasi-static (NQS) model. The new model eliminates the nonphysical negative drain transport (as opposed to displacement) current at large drain voltage and under fast gate voltage (\u0000<inline-formula> <tex-math>$text {V}_{text {gs}}$ </tex-math></inline-formula>\u0000) turn-on. The new model agrees well with the technology computer-aided design (TCAD) simulation data for turn-on and turnoff transients and for all the drain voltage (\u0000<inline-formula> <tex-math>$text {V}_{text {ds}}$ </tex-math></inline-formula>\u0000) values, small or large. In addition, the model captures the temperature dependence of channel charge partition between source charge and drain charge in agreement with TCAD simulation results, thus reconfirming the importance of including Boltzmann statistics in NQS models. The new Boltzmann-aware NQS model is implemented in Verilog-A and tested using commercial circuit simulators. It is intended for the simulation of large-signal and small-signal NQS, and high-speed analog, logic and memory circuits.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"357-363"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/TED.2024.3509389
Guangyi Lu;Lihui Wang;Ling Wang;Xin Gao;Jiahao Wei;Haiming Wang
This article presents the troubleshooting of a high-leakage issue in an overdrive fin field-effect transistor (FinFET) electrostatic discharge (ESD) power clamp. With silicon data exhibiting abnormal results, elaborate troubleshooting, including device reliability and simulation to silicon (S2S) gap analyses, are performed and presented. Through alignments of silicon data and presumptive simulation results, fabrication-induced root cause is successfully revealed. It is confirmed by physical failure analysis (PFA) results that the narrow width of high-resistance (HiR) resistors induces an aggressive pull-back effect during fabrication. This pull-back effect results in open connections of related HiR resistors and explains the observed abnormal silicon data.
{"title":"Troubleshooting a High-Leakage Issue of an Overdrive FinFET ESD Power Clamp From Fabrication Perspective","authors":"Guangyi Lu;Lihui Wang;Ling Wang;Xin Gao;Jiahao Wei;Haiming Wang","doi":"10.1109/TED.2024.3509389","DOIUrl":"https://doi.org/10.1109/TED.2024.3509389","url":null,"abstract":"This article presents the troubleshooting of a high-leakage issue in an overdrive fin field-effect transistor (FinFET) electrostatic discharge (ESD) power clamp. With silicon data exhibiting abnormal results, elaborate troubleshooting, including device reliability and simulation to silicon (S2S) gap analyses, are performed and presented. Through alignments of silicon data and presumptive simulation results, fabrication-induced root cause is successfully revealed. It is confirmed by physical failure analysis (PFA) results that the narrow width of high-resistance (HiR) resistors induces an aggressive pull-back effect during fabrication. This pull-back effect results in open connections of related HiR resistors and explains the observed abnormal silicon data.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"62-67"},"PeriodicalIF":2.9,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) ferroelectric random access memories (FeRAMs) with various HfO2/ZrO2 nanolamination (NL) thicknesses and a 1.5-nm ZrO2 seed layer were fabricated without and with in situ O2 plasma treatment to experimentally investigate and discuss their ferroelectricity and endurance performance. Compared with the conventional HZO FeRAMs, the HfO2–ZrO2 SL HZO FeRAMs with a HfO2 and ZrO2 NL thickness of 1 nm exhibited a higher two remnant polarization ( $2{P} _{text {r}}$ ) of $43.32~mu $ C/cm2, nearly wake-up free behavior, stronger fatigue effect immunity, and lower two coercive field ( $2{E} _{text {c}}$ ) of 2.55 MV/cm. Furthermore, by using an in situ O2 plasma-treated SL HZO thin film for the FeRAMs to greatly suppress the oxygen vacancy generation during cycling, a further improved fatigue effect immunity and significantly reduced pulsed $2{P} _{text {r}}$ degradation rate ( $Delta 2{P} _{text {r}}$ / $2{P} _{text {r,pristine}}$ ) down to 36.48% after the endurance test of $10^{{9}}$ cycles can be achieved because the in situ O2 plasma-treated SL HZO FeRAMs possess a significantly enhanced HZO thin-film quality. Therefore, the in situ O2 plasma-treated SL HZO FeRAMs are very suitable candidates for embedded nonvolatile memory (eNVM) applications.
在本研究中，制备了具有不同HfO2/ZrO2纳米层（NL）厚度的HfO2 - ZrO2超晶格（SL）、HfZrO2 （HZO）铁电随机存取存储器（FeRAMs）和1.5 nm的ZrO2种子层，并进行了原位氧等离子体处理，实验研究和讨论了它们的铁电性能和耐用性。与传统的HZO feram相比，HfO2和ZrO2 NL厚度为1 nm的HfO2 - ZrO2 SL HZO feram具有更高的两次残余极化（$2{P} _{text {r}}$） $43.32~mu $ C/cm2，几乎无唤醒行为，更强的疲劳效应免疫能力和2.55 MV/cm的两次矫顽力场（$2{E} _{text {c}}$）。此外，通过使用原位O2等离子体处理的SL HZO薄膜，feram大大抑制了循环过程中氧空位的产生，进一步提高了疲劳效应的免疫力，并显着降低了脉冲$2{P} _{text {r}}$降解率（$Delta 2{P} _{text {r}}$ / $2{P} _{text {r,pristine}}$）至36.48% after the endurance test of $10^{{9}}$ cycles can be achieved because the in situ O2 plasma-treated SL HZO FeRAMs possess a significantly enhanced HZO thin-film quality. Therefore, the in situ O2 plasma-treated SL HZO FeRAMs are very suitable candidates for embedded nonvolatile memory (eNVM) applications.
{"title":"In Situ O₂ Plasma-Treated HfO₂–ZrO₂ Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance Performance","authors":"Dong-Ru Hsieh;Zi-Yang Hong;Wei-Ju Yeh;Jia-Chian Ni;Huai-En Luo;Yan-Kui Liang;Chun-Hsiung Lin;Tien-Sheng Chao","doi":"10.1109/TED.2024.3509401","DOIUrl":"https://doi.org/10.1109/TED.2024.3509401","url":null,"abstract":"In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) ferroelectric random access memories (FeRAMs) with various HfO2/ZrO2 nanolamination (NL) thicknesses and a 1.5-nm ZrO2 seed layer were fabricated without and with in situ O2 plasma treatment to experimentally investigate and discuss their ferroelectricity and endurance performance. Compared with the conventional HZO FeRAMs, the HfO2–ZrO2 SL HZO FeRAMs with a HfO2 and ZrO2 NL thickness of 1 nm exhibited a higher two remnant polarization (\u0000<inline-formula> <tex-math>$2{P} _{text {r}}$ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$43.32~mu $ </tex-math></inline-formula>\u0000C/cm2, nearly wake-up free behavior, stronger fatigue effect immunity, and lower two coercive field (\u0000<inline-formula> <tex-math>$2{E} _{text {c}}$ </tex-math></inline-formula>\u0000) of 2.55 MV/cm. Furthermore, by using an in situ O2 plasma-treated SL HZO thin film for the FeRAMs to greatly suppress the oxygen vacancy generation during cycling, a further improved fatigue effect immunity and significantly reduced pulsed \u0000<inline-formula> <tex-math>$2{P} _{text {r}}$ </tex-math></inline-formula>\u0000 degradation rate (\u0000<inline-formula> <tex-math>$Delta 2{P} _{text {r}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>$2{P} _{text {r,pristine}}$ </tex-math></inline-formula>\u0000) down to 36.48% after the endurance test of \u0000<inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula>\u0000 cycles can be achieved because the in situ O2 plasma-treated SL HZO FeRAMs possess a significantly enhanced HZO thin-film quality. Therefore, the in situ O2 plasma-treated SL HZO FeRAMs are very suitable candidates for embedded nonvolatile memory (eNVM) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"259-265"},"PeriodicalIF":2.9,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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