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High-Temperature Retention Stability of Multibit Ferroelectric HfZrO$_{text{2}}$ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window 具有硅基/硅超晶格通道的多位铁电 HfZrO$_{text{2}}$ FinFET 的高温保持稳定性可提高速度和内存窗口
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-12 DOI: 10.1109/ted.2024.3434772
Yi-Ju Yao, Tsai-Jung Lin, Chen-You Wei, Bo-Xu Chen, Yung-Teng Fang, Heng-Jia Chang, Yu-Min Fu, Guang-Li Luo, Fu-Ju Hou, Yung-Chun Wu
{"title":"High-Temperature Retention Stability of Multibit Ferroelectric HfZrO$_{text{2}}$ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window","authors":"Yi-Ju Yao, Tsai-Jung Lin, Chen-You Wei, Bo-Xu Chen, Yung-Teng Fang, Heng-Jia Chang, Yu-Min Fu, Guang-Li Luo, Fu-Ju Hou, Yung-Chun Wu","doi":"10.1109/ted.2024.3434772","DOIUrl":"https://doi.org/10.1109/ted.2024.3434772","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current 具有超高击穿电压和导通电流的硅基金刚石 IGBT
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-12 DOI: 10.1109/ted.2024.3450436
Zhi Jiang, Enpu Wang, Jun Ying, Chengchang Zhang, Jiajia Du, Guangyu Wang, Yu Pang
{"title":"Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current","authors":"Zhi Jiang, Enpu Wang, Jun Ying, Chengchang Zhang, Jiajia Du, Guangyu Wang, Yu Pang","doi":"10.1109/ted.2024.3450436","DOIUrl":"https://doi.org/10.1109/ted.2024.3450436","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Packaging for Reliability Improvement of P1.2 Mini-LED Emissive Displays in High Temperature and Humidity 改进封装以提高 P1.2 微型 LED 发射显示器在高温高湿环境下的可靠性
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-12 DOI: 10.1109/ted.2024.3440273
Ji Li, Duokai Zhao, Guozhong Wang, Yongchao Zhao, Jie Chen, Yongming Yin, Hong Meng
{"title":"Enhanced Packaging for Reliability Improvement of P1.2 Mini-LED Emissive Displays in High Temperature and Humidity","authors":"Ji Li, Duokai Zhao, Guozhong Wang, Yongchao Zhao, Jie Chen, Yongming Yin, Hong Meng","doi":"10.1109/ted.2024.3440273","DOIUrl":"https://doi.org/10.1109/ted.2024.3440273","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Physics-Based Analytic Model for p-GaN HEMTs 基于物理的 p-GaN HEMT 分析模型
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-12 DOI: 10.1109/ted.2024.3453785
Zarak Bhat, Sheikh Aamir Ahsan
{"title":"A Physics-Based Analytic Model for p-GaN HEMTs","authors":"Zarak Bhat, Sheikh Aamir Ahsan","doi":"10.1109/ted.2024.3453785","DOIUrl":"https://doi.org/10.1109/ted.2024.3453785","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise 高电子迁移率晶体管漏极噪声的实验研究：热噪声和热电子噪声
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-11 DOI: 10.1109/ted.2024.3445889
Bekari Gabritchidze, Justin H. Chen, Kieran A. Cleary, Anthony C. Readhead, Austin J. Minnich
{"title":"Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise","authors":"Bekari Gabritchidze, Justin H. Chen, Kieran A. Cleary, Anthony C. Readhead, Austin J. Minnich","doi":"10.1109/ted.2024.3445889","DOIUrl":"https://doi.org/10.1109/ted.2024.3445889","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer 基于 InZnGeO 沟道层的高可用性薄膜晶体管
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-11 DOI: 10.1109/ted.2024.3453219
Cong Peng, Huixue Huang, Zheng Ma, Fa-Hsyang Chen, Guowen Yan, Junfeng Li, Wenwu Li, Xifeng Li, Junhao Chu, Jianhua Zhang
{"title":"High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer","authors":"Cong Peng, Huixue Huang, Zheng Ma, Fa-Hsyang Chen, Guowen Yan, Junfeng Li, Wenwu Li, Xifeng Li, Junhao Chu, Jianhua Zhang","doi":"10.1109/ted.2024.3453219","DOIUrl":"https://doi.org/10.1109/ted.2024.3453219","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate 柔性 PEEK 基底面上的 InGaZnO 薄膜晶体管的直流和交流性能
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-11 DOI: 10.1109/ted.2024.3453220
Qazi Zahid Husain, Dianne Corsino, Federica Catania, Koichi Ishida, Tilo Meister, Frank Ellinger, Niko Münzenrieder, Giuseppe Cantarella
{"title":"DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate","authors":"Qazi Zahid Husain, Dianne Corsino, Federica Catania, Koichi Ishida, Tilo Meister, Frank Ellinger, Niko Münzenrieder, Giuseppe Cantarella","doi":"10.1109/ted.2024.3453220","DOIUrl":"https://doi.org/10.1109/ted.2024.3453220","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Active Electrode With a High-Gain a-IGZO TFT Bootstrap Amplifier for Surface Electromyography Signal Acquisition 带有高增益 a-IGZO TFT 自举放大器的有源电极，用于采集表面肌电图信号
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-11 DOI: 10.1109/ted.2024.3453231
Mingxing Tian, Aiying Guo, Xiaolin Guo, Nan Jiang, Qiang Lei, Lian Cheng, Jun Li, Jianhua Zhang
{"title":"Active Electrode With a High-Gain a-IGZO TFT Bootstrap Amplifier for Surface Electromyography Signal Acquisition","authors":"Mingxing Tian, Aiying Guo, Xiaolin Guo, Nan Jiang, Qiang Lei, Lian Cheng, Jun Li, Jianhua Zhang","doi":"10.1109/ted.2024.3453231","DOIUrl":"https://doi.org/10.1109/ted.2024.3453231","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit 新型低损耗 0.65-THz 多剖面折叠波导高频电路
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-10 DOI: 10.1109/ted.2024.3452703
Jingyu Guo, Yang Dong, Yuan Zheng, Duo Xu, Jingrui Duan, Yuxin Wang, Ping Zhang, Zhanliang Wang, Zhigang Lu, Shaomeng Wang, Yubin Gong
{"title":"Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit","authors":"Jingyu Guo, Yang Dong, Yuan Zheng, Duo Xu, Jingrui Duan, Yuxin Wang, Ping Zhang, Zhanliang Wang, Zhigang Lu, Shaomeng Wang, Yubin Gong","doi":"10.1109/ted.2024.3452703","DOIUrl":"https://doi.org/10.1109/ted.2024.3452703","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs MOSFET 中相关载流子数量和迁移率波动机制的精细分析
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-10 DOI: 10.1109/ted.2024.3445310
Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso, Eddy Simoen
{"title":"Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs","authors":"Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso, Eddy Simoen","doi":"10.1109/ted.2024.3445310","DOIUrl":"https://doi.org/10.1109/ted.2024.3445310","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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