High-Performance Black Arsenic Photodetector Assisted by Multi-Mechanisms Effects Detecting From Visible to Terahertz

Abstract

Defects such as high dark current, low temperature working conditions, low flexibility hinder the development of traditional material photodetectors. While some innovative low-dimensional materials, such as black phosphorus, are highly unstable. As a twin material of black phosphorus, black arsenic (b-As) has excellent properties of black phosphorus and relatively eliminates the characteristics of instability. Here, a high-performance photodetector based on black arsenic is proposed in detecting visible, near infrared and terahertz. The b-As photodetector exhibits a fast response speed while maintaining a responsivity of 647.5 V/W and a noise equivalent power of $2.30\times 10 ^{-11}$ W/Hz $^{1/2}$ under 520 nm irradiation. Assisted by photoconductive effect and thermal effect, we explain the reason for its detection of visible, near infrared and terahertz respectively. Moreover, this b-As photodetector exhibits high-resolution imaging capability on target band. By demonstrating the significant potential of b-As in the realm of broadband photodetection, our research presents a promising avenue for future optoelectronic applications.