{"title":"Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs","authors":"Ruxue Yao;Hongliang Lu;Yuming Zhang;Yutao Zhang;Jing Qiao;Jing Sun;Mingzhu Xun;Gang Yu","doi":"10.1109/TDMR.2024.3431633","DOIUrl":null,"url":null,"abstract":"Electronic components operating in aerospace environments face a variety of reliability issues. The total ionization dose (TID) degradation mechanism of bulk I/O-FinFETs and the influence of hot carrier degradation (HCD) on TID irradiation are investigated in this paper. Devices under ON/TG/OFF bias conditions were irradiated to 2 Mrad (Si). The nFinFETs show degradation of threshold voltage, subthreshold swing and off-state leakage current. An increase in peak transconductance and on-state current was also observed in the nFinFETs. The TID response of nFinFETs is dominated by positively trapped charges in the gate oxide and shallow trench isolation (STI). For pFinFETs, radiation-induced hole-trapped charges leads to an increase in the threshold voltage and a decrease in the drive current. The worst degradation is observed when a high electric field is applied to the gate during irradiation. Post-stress irradiation results show that the HCD and TID degradation trends of the nFinFETs are opposite and have a mutual canceling effect, while the degradation trends of the pFinFETs are consistent and jointly deteriorate the device performance. Compared to the un-stressed devices, the TID damage of the pre-stressed devices is more drastic, especially for the nFinFETs. The stress-induced interface trapped charges increase the electric field in the gate oxide during subsequent irradiation, which causes more radiation-induced hole-trapped charges and exacerbate TID degradation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 3","pages":"456-462"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614355/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
Electronic components operating in aerospace environments face a variety of reliability issues. The total ionization dose (TID) degradation mechanism of bulk I/O-FinFETs and the influence of hot carrier degradation (HCD) on TID irradiation are investigated in this paper. Devices under ON/TG/OFF bias conditions were irradiated to 2 Mrad (Si). The nFinFETs show degradation of threshold voltage, subthreshold swing and off-state leakage current. An increase in peak transconductance and on-state current was also observed in the nFinFETs. The TID response of nFinFETs is dominated by positively trapped charges in the gate oxide and shallow trench isolation (STI). For pFinFETs, radiation-induced hole-trapped charges leads to an increase in the threshold voltage and a decrease in the drive current. The worst degradation is observed when a high electric field is applied to the gate during irradiation. Post-stress irradiation results show that the HCD and TID degradation trends of the nFinFETs are opposite and have a mutual canceling effect, while the degradation trends of the pFinFETs are consistent and jointly deteriorate the device performance. Compared to the un-stressed devices, the TID damage of the pre-stressed devices is more drastic, especially for the nFinFETs. The stress-induced interface trapped charges increase the electric field in the gate oxide during subsequent irradiation, which causes more radiation-induced hole-trapped charges and exacerbate TID degradation.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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