Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22-nm FDSOI CMOS at 2–4 K and 300 K

Abstract

Large arrays of 1024 single and 2048 coupled quantum dots (QDs) are characterized at 2–4 K and 300 K for the first time using transport measurements. We demonstrate < 0.2 fA gate leakage current, tunnel current transport through 19 series-connected p - and n -type QDs, 2D-coupling in arrays of 18nm $ \times 15$ nm $ \times 6$ nm QDs with 40-nm spacing, back gate selectivity and tuneability of quantum features, and scaling of the gate-voltage difference between Coulomb peaks with increasing gate oxide thickness and decreasing QD size for both p - and n -type structures.