Single-Step Extraction of Transformer Attention With Dual-Gated Memtransistor Crossbars

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-07-29 DOI:10.1109/LED.2024.3435540
Nethmi Jayasinghe;Maeesha Binte Hashem;Dinithi Jayasuriya;Leila Rahimifard;Min-A Kang;Vinod K. Sangwan;Mark C. Hersam;Amit Ranjan Trivedi
{"title":"Single-Step Extraction of Transformer Attention With Dual-Gated Memtransistor Crossbars","authors":"Nethmi Jayasinghe;Maeesha Binte Hashem;Dinithi Jayasuriya;Leila Rahimifard;Min-A Kang;Vinod K. Sangwan;Mark C. Hersam;Amit Ranjan Trivedi","doi":"10.1109/LED.2024.3435540","DOIUrl":null,"url":null,"abstract":"We discuss how a dual-gated \n<italic>memtransistor</i>\n crossbar can accelerate the extraction of the Transformer’s attention scores. A memtransistor is a novel two-dimensional material-based device that offers non-volatile programmability and gate tunability. Leveraging these attributes, we demonstrate the extraction of quadratic-order products on a single memtransistor and the single-step extraction of attention scores without inferring intermediate query/key vectors. The query/key-free processing of memtransistor-based attention scoring results in \n<inline-formula> <tex-math>$2.37\\times $ </tex-math></inline-formula>\n lower energy with less than half crossbar cells.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614197/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

We discuss how a dual-gated memtransistor crossbar can accelerate the extraction of the Transformer’s attention scores. A memtransistor is a novel two-dimensional material-based device that offers non-volatile programmability and gate tunability. Leveraging these attributes, we demonstrate the extraction of quadratic-order products on a single memtransistor and the single-step extraction of attention scores without inferring intermediate query/key vectors. The query/key-free processing of memtransistor-based attention scoring results in $2.37\times $ lower energy with less than half crossbar cells.
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利用双门控晶体管横杆单步提取变压器注意力
我们将讨论双门控忆晶体管横杆如何加速提取变压器的注意力分数。忆晶体管是一种基于二维材料的新型器件,具有非易失性可编程性和栅极可调性。利用这些特性,我们演示了在单个memtransistor上提取四阶乘积,以及在不推断中间查询/密钥向量的情况下单步提取注意力分数。基于内存晶体管的注意力评分的无查询/密钥处理以不到一半的交叉条单元降低了 2.37 美元/次的能耗。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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