Surface Acoustic Wave Actuated MEMS Magnetoelectric Antenna

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-01 DOI:10.1109/LED.2024.3437157

Chenye Zhang;Yahui Ji;Hao Gu;Peiran Zhang;Jianle Liu;Xianfeng Liang;Fan Yang;Tianling Ren;Tianxiang Nan

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Abstract

Acoustic wave actuated magnetoelectric (ME) antennas represent a promising avenue for antenna miniaturization. However, ME antennas, typically based on bulk acoustic wave (BAW) resonance mode, have an orthogonal configuration for strain and magnetization directions, limiting ME coupling efficiency. In this work, we propose and demonstrate a surface acoustic wave (SAW) actuated electromagnetic (EM) wave radiation in a ME heterostructure, in which the strain and magnetization both lies in same direction. We find a strong enhancement of the SAW ME antenna gain with the increase of the ferromagnetic film thickness, demonstrating a magnetic origin of the proposed radiation mechanism. The SAW ME antennas reach a maximum gain of −28 dBi at 430 MHz and a high fractional bandwidth of 1.60%, despite their compact size, approximately one percent of the EM wavelength. These findings pave the way for advancing the development of miniaturized ultra-high frequency antennas, offering potential breakthroughs in ME antenna design and performance.

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表面声波驱动 MEMS 磁电天线

声波致动磁电（ME）天线是天线微型化的一条大有可为的途径。然而，通常基于体声波（BAW）共振模式的 ME 天线在应变和磁化方向上具有正交配置，从而限制了 ME 的耦合效率。在这项工作中，我们提出并演示了一种表面声波（SAW）致动电磁波（EM）辐射的 ME 异质结构，其中应变和磁化方向相同。我们发现，随着铁磁膜厚度的增加，声表面波 ME 天线增益也会随之增强，这证明了所提出的辐射机制源于磁性。声表面波 ME 天线在 430 MHz 频率下的最大增益为 -28 dBi，带宽高达 1.60%，尽管其尺寸小巧，约为电磁波长的百分之一。这些发现为推动小型化超高频天线的发展铺平了道路，为 ME 天线的设计和性能提供了潜在的突破。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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