V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James
{"title":"Electrophysical Properties of Cd₀.₉₆Mn₀.₀₄Te₀.₉₆Se₀.₀₄ Surface-Barrier Diodes","authors":"V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James","doi":"10.1109/TNS.2024.3436525","DOIUrl":null,"url":null,"abstract":"Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to \n<inline-formula> <tex-math>$\\rho ~\\approx ~400~\\Omega \\cdot \\text {cm}$ </tex-math></inline-formula>\n and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity \n<inline-formula> <tex-math>$\\rho =\\rho (T)$ </tex-math></inline-formula>\n was equal to \n<inline-formula> <tex-math>$\\Delta E \\approx 0.24$ </tex-math></inline-formula>\n eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to \n<inline-formula> <tex-math>$E_{g} =1.495$ </tex-math></inline-formula>\n eV.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2189-2193"},"PeriodicalIF":1.9000,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10620344/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to
$\rho ~\approx ~400~\Omega \cdot \text {cm}$
and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity
$\rho =\rho (T)$
was equal to
$\Delta E \approx 0.24$
eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to
$E_{g} =1.495$
eV.
期刊介绍：
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
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