V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James
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引用次数: 0
Abstract
Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to
$\rho ~\approx ~400~\Omega \cdot \text {cm}$
and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity
$\rho =\rho (T)$
was equal to
$\Delta E \approx 0.24$
eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to
$E_{g} =1.495$
eV.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.