Theoretical calculations of the optoelectronic properties of a penta-graphene monolayer: study of many-body effects

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-08-03 DOI:10.1007/s10825-024-02208-y
B. Minaie, S. A. Ketabi, J. M. De Sousa
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Abstract

Based on density functional theory (DFT), the GW approximation and Bethe–Salpeter equation (BSE), we performed a theoretical calculation to study the electronic and optical properties of penta-graphene (PG) monolayers. Our findings reveal that PG behaves as a semiconductor with an indirect band gap of 2.27 eV at the DFT-GGA level. By incorporating the GW approximation based on many-body perturbation theory, we observed an increase in the band gap, resulting in a quasi-direct band gap of 4.53 eV. Furthermore, we employed the G0W0-RPA and G0W0-BSE approximations to compute the optical spectra of the monolayer in the absence and in the presence of electron–hole interaction, respectively. The results indicate that the inclusion of electron–hole interactions leads to a red-shift of the absorption spectrum towards lower energies compared to the spectrum obtained from the G0W0-RPA approximation. Notably, the optical absorption spectra are predominantly governed by the first bound exciton, characterized by a significant binding energy of 2.07 eV. Our results suggest that the PG monolayer, with its wider band gap and enhanced excitonic effects, is potentially a suitable candidate for the design and fabrication of optoelectronic components.

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五石墨烯单层光电特性的理论计算:多体效应研究
基于密度泛函理论(DFT)、GW 近似和 Bethe-Salpeter 方程(BSE),我们进行了理论计算,研究了五石墨烯(PG)单层的电子和光学特性。我们的研究结果表明,在 DFT-GGA 水平上,五石墨烯表现为间接带隙为 2.27 eV 的半导体。通过加入基于多体扰动理论的 GW 近似,我们观察到带隙有所增大,达到了 4.53 eV 的准直接带隙。此外,我们还采用 G0W0-RPA 和 G0W0-BSE 近似分别计算了单层在没有电子-空穴相互作用和有电子-空穴相互作用时的光学光谱。结果表明,与根据 G0W0-RPA 近似方法得到的光谱相比,加入电子-空穴相互作用会导致吸收光谱向低能量方向红移。值得注意的是,光吸收光谱主要由第一个结合激子控制,其特点是结合能高达 2.07 eV。我们的研究结果表明,PG 单层具有更宽的带隙和更强的激子效应,有可能成为设计和制造光电元件的合适候选材料。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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