Theoretical prediction of the mechanical, electronic, optical and thermodynamic properties of antiperovskites A3BO (A = K, Rb and B = Au, Br) using DFT scheme: new candidate for optoelectronic devices application

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-08-10 DOI:10.1007/s10825-024-02213-1
Salah Uddin, Akash Das, M. A. Rayhan, Sohail Ahmad, Rashel Mohammad Khokan, Md. Rasheduzzaman, Remon Das, Aasim Ullah, Yasir Arafat, Md. Zahid Hasan
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Abstract

Density Functional Theory (DFT) is incorporated in this study to examine the thermodynamic, electronic, mechanical, and optical characteristics of antiperovskite compounds A3BO (A = K, Rb and B = Au, Br). The purpose of the study is to demonstrate a comprehensive understanding of these materials and their potential applications across various fields emphasizing their stability and energetic profiles. The electronic properties, including band structures, and density of states are also analyzed to understand the electrical behavior of these materials, which enables predicting their conductive and semiconductor nature. The band gaps of K3AuO, K3BrO, Rb3AuO, and Rb3BrO are 0.72 eV, 0.80 eV, 0.15 eV, and 0.29 eV, respectively. The study also investigated the mechanical properties of the antiperovskite structures, including elastic constants, bulk modulus, and shear modulus to provide insights into their mechanical stability and durability. Their Pugh’s ratio (B/G) is below 1.75 and negative Cauchy pressure indicates these compounds are brittle. And machinability index B/C44 > 1.5 implies excellent lubricating properties. This phenomenon extends the potential industrial application of materials with specific mechanical integrity to their structural components. Additionally, the study investigated the optical properties of the A3BO antiperovskite compounds, including the dielectric function, loss function, reflectivity, conductivity, refractive index, and absorption spectra. These findings provide a comprehensive understanding of how these materials interact with light, which could be useful in the development of optoelectronic devices. Overall, this DFT study provides significant insights into the multifaceted properties of A3BO antiperovskite compounds, laying the groundwork for further experimental exploration and facilitating the targeted design of materials with tailored properties for specific technological applications.

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利用 DFT 方案对反钝化玻璃 A3BO(A = K、Rb,B = Au、Br)的机械、电子、光学和热力学性质进行理论预测:光电器件应用的新候选材料
本研究采用密度泛函理论(DFT)来研究反钝角石化合物 A3BO(A = K、Rb,B = Au、Br)的热力学、电子、机械和光学特性。研究的目的是全面了解这些材料及其在各个领域的潜在应用,强调其稳定性和能量特征。此外,还分析了这些材料的电子特性,包括带状结构和态密度,以了解它们的电学行为,从而预测它们的导电性和半导体性质。K3AuO、K3BrO、Rb3AuO 和 Rb3BrO 的带隙分别为 0.72 eV、0.80 eV、0.15 eV 和 0.29 eV。研究还调查了反沸石结构的机械特性,包括弹性常数、体积模量和剪切模量,以深入了解它们的机械稳定性和耐久性。这些化合物的普氏比(B/G)低于 1.75,负的考奇压力表明这些化合物是脆性的。而机加工性能指数 B/C44 > 1.5 则意味着这些化合物具有出色的润滑性能。这一现象将具有特定机械完整性的材料的潜在工业应用扩展到其结构组件。此外,研究还调查了 A3BO 反包晶石化合物的光学特性,包括介电函数、损耗函数、反射率、电导率、折射率和吸收光谱。这些发现让人们对这些材料如何与光相互作用有了全面的了解,对光电器件的开发很有帮助。总之,这项 DFT 研究为了解 A3BO 反包晶石化合物的多方面特性提供了重要见解,为进一步的实验探索奠定了基础,并有助于针对特定技术应用设计具有定制特性的材料。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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