Liufei Zhou;Fuchao He;Xiaojun Guo;Haihong Wang;Mingxin Wang;Yuning Zhang;Baoping Wang
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引用次数: 0
Abstract
In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for touch sensing operations to achieve a touch reporting rate as twice as the frame rate of a display. A dual low-level maintaining unit design is used to suppress influence of the threshold voltage shift of TFTs through alternately turning on the devices. Owing to recovery of threshold voltage shift under negative bias, this design can maintain stable performance during long time operation. A narrow border 6.5” in-cell LCD panel of 90 Hz display with a 180 Hz touch reporting rate is finally demonstrated.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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