Comprehensive characterization of a high-performance double heterojunction InGaAs pHEMT for linear power-efficient amplifiers applications

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-05 DOI:10.1002/jnm.3277

Sadia Sultana, Jannatul Naima, Md. Shamsul Alam, Md. Shah Alam, Giovanni Crupi, Mohammad A. Alim

{"title":"Comprehensive characterization of a high-performance double heterojunction InGaAs pHEMT for linear power-efficient amplifiers applications","authors":"Sadia Sultana, Jannatul Naima, Md. Shamsul Alam, Md. Shah Alam, Giovanni Crupi, Mohammad A. Alim","doi":"10.1002/jnm.3277","DOIUrl":null,"url":null,"abstract":"This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on-wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher-order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability.","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3277","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on-wafer DC and RF measurements up to 50 GHz. With a high I_ON/I_OFF ratio (1.21 × 10⁷) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of V_gs has been achieved for the tested device. Furthermore, the input intercept and higher-order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest f_T and f_max values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability.

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高性能双异质结 InGaAs pHEMT 的综合表征，用于线性高能效放大器应用

本文重点研究了 0.5 μm × (2 × 100) μm 双异质结 AlGaAs/InGaAs/GaAs pHEMT 的静电现象、线性度、模拟和射频性能，采用了高达 50 GHz 的片上直流和射频测量。测试器件具有高离子/离子交换比（1.21 × 107）和低亚阈值斜率（72.7 mV/dec），在宽 Vgs 范围内实现了平坦而高的跨导。此外，输入截距和高阶电压截距点都达到了较大值，且互调和谐波失真较低。在射频参数方面，本征增益高达 28 dB。GBW 高达 750 GHz，最高 fT 和 fmax 值分别为 24.5 GHz 和 99.3 GHz。由于该器件具有极低的本征电容，因此 TFP、GFP 和 GTFP 等参数也显示出优异的效果。高本征增益和 TGF 显示了该器件作为放大器使用的巨大潜力。对这些参数的研究表明，该器件具有非常好的线性和放大能力。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.