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Radiation Pattern Prediction for Third-Order Intermodulation of the Reconfigurable Reflectarray Antenna With Embedded Varactor 嵌入变容管的可重构反射天线三阶互调辐射方向图预测
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-04 DOI: 10.1002/jnm.70151
Xianli Tang, Yonghao Jia, Yuehang Xu, Xin Zhang, Wei-Bing Lu

Reconfigurable reflectarray antenna (RRA) has been considered a potential technology for future communication. However, few studies focus on investigating the intermodulation distortion induced by its active devices, which are employed to provide different compensation phases for the RRA elements. In this paper, the radiation pattern prediction for third-order intermodulation (IM3) distortion of the RRA with embedded varactor diodes is first proposed. It is implemented with a nonlinear model of the varactor and full-wave electromagnetism (FEM) simulation. The presented varactor model is first employed to design the RRA and then to acquire the power and phase of the IM3 signal in each element of the RRA, which is realized with a nonlinear harmonic-balance and FEM co-simulation. With the help of the HFSS software, the radiation pattern is achieved when the co-simulation results of the RRA elements are input. The IM3 radiation measurement of the RRA is presented to verify the radiation pattern prediction of the IM3 signal. The consistent comparison results between the simulation and the measurement indicate that the proposed method is accurate. Significantly, the radiation pattern of the IM3 signal is different from that of the fundamental signal based on the designed RRA. It is meaningful and implies that it may have linearization approaches for the RRA. The proposed method will enhance the application of the RRA since the linearization approach is still a scientific challenge in future wireless networks.

可重构反射天线(RRA)被认为是未来通信的一种潜在技术。然而,很少有研究关注其有源器件引起的互调失真,这些有源器件用于为RRA元件提供不同的补偿相位。本文首次提出了嵌入式变容二极管RRA三阶互调失真的辐射方向图预测方法。利用变容器的非线性模型和全波电磁仿真(FEM)来实现。首先利用所提出的变容模型对RRA进行设计,然后通过非线性谐波平衡和有限元联合仿真实现了RRA各单元中IM3信号的功率和相位的获取。在HFSS软件的帮助下,输入RRA单元的联合模拟结果,得到了辐射方向图。给出了RRA的IM3辐射测量,验证了IM3信号的辐射方向图预测。仿真结果与实测结果一致,表明该方法是准确的。值得注意的是,基于设计的RRA, IM3信号的辐射方向图与基波信号的辐射方向图不同。这是有意义的,并暗示它可能有线性化方法的RRA。由于线性化方法在未来无线网络中仍然是一个科学挑战,因此所提出的方法将增强RRA的应用。
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引用次数: 0
An Adaptive Mutation Strategy Dung Beetle Optimizer for Pattern Synthesis of Thinned Antenna Array 一种用于天线阵列方向图合成的自适应突变策略屎壳虫优化器
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-04 DOI: 10.1002/jnm.70145
Ruiyou Li, Min Li, Chen Hu, Wen Liao, Chang Liu

In addressing the pattern synthesis of multiconstraint thinned planar antenna arrays, existing intelligent optimization algorithms encounter limitations such as premature convergence and insufficient solution accuracy. Therefore, we propose an adaptive mutation strategy dung beetle optimizer (AMSDBO) for optimizing thinned planar antenna arrays. The AMSDBO algorithm innovatively constructs a three-stage collaborative optimization framework, effectively achieving high-performance design for thinned planar arrays under the constraints of fixed aperture size and sparsity rate through a parameter adaptive adjustment mechanism. Firstly, initial solutions for the dung beetle populations are generated using a chaotic mapping reverse learning (CMRL) strategy to enhance both population diversity and the quality of the initial solutions. Next, the local mutation search (LMS) mechanism is introduced. An adaptive T-distribution mechanism is imposed to effectively enhance the early global search capability. Then, the Lévy flight variation strategy is employed to adaptively adjust the positions of the dung beetle population in the later stages, helping the algorithm avoid local optima and accelerating convergence. Simulation results with classical test functions demonstrate that AMSDBO offers significant advantages in convergence accuracy and robustness compared to traditional algorithms (DBO, PSO, and IWO). Additionally, two sets of typical planar thinned array experimental results indicate that the optimization performance of the AMSDBO algorithm is significantly improved compared to traditional optimization algorithms. Specifically, there is a peak sidelobe level (PSLL) reduction of 15.5% for DBO, 11.64% for PSO, and 14.56% for IWO. This confirms the effectiveness and superiority of the AMSDBO algorithm.

在解决多约束薄化平面天线阵列方向图综合问题时,现有的智能优化算法存在过早收敛和求解精度不足等局限性。因此,我们提出了一种自适应突变策略屎壳虫优化器(AMSDBO)来优化薄平面天线阵列。AMSDBO算法创新性地构建了三阶段协同优化框架,通过参数自适应调整机制,有效地实现了固定孔径尺寸和稀疏率约束下薄化平面阵列的高性能设计。首先,采用混沌映射反向学习(CMRL)策略生成粪甲虫种群的初始解,以提高种群多样性和初始解的质量;其次,介绍了局部突变搜索(LMS)机制。引入自适应t分布机制,有效增强了早期全局搜索能力。然后,采用l飞行变异策略自适应调整蜣螂种群后期的位置,避免了算法的局部最优,加速了算法的收敛。经典测试函数的仿真结果表明,与传统算法(DBO、PSO和IWO)相比,AMSDBO在收敛精度和鲁棒性方面具有显著优势。此外,两组典型的平面薄阵列实验结果表明,与传统优化算法相比,AMSDBO算法的优化性能有显著提高。具体来说,DBO的峰值旁瓣电平(PSLL)降低了15.5%,PSO的峰值旁瓣电平降低了11.64%,IWO的峰值旁瓣电平降低了14.56%。这证实了AMSDBO算法的有效性和优越性。
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引用次数: 0
A New Y-Function MOSFET Mobility Extraction Method Accounting for Coulomb Scattering at Cryogenic Temperatures 一种考虑低温库仑散射的y函数MOSFET迁移率提取新方法
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-30 DOI: 10.1002/jnm.70147
Shilong Li, Chengbo Yang, Hao Su, Haoyang Li, Yuhuan Lin, Yiyuan Cai, Zhizhao Ma, Shenghua Zhou, Longyang Lin, Feichi Zhou, Hongyu Yu, Kai Chen, Yida Li

Relatively few in-depth studies on MOSFET mobility are published at cryogenic temperatures partially due to lack of appropriate extraction method associated with more complicated scattering mechanisms than at room temperature. This paper, for the first time, proposes a new Y-function method, which is both physically and engineering novel, for mobility extraction considering the Coulomb scattering that dominates toward cryogenic temperatures. This new Y-function method demonstrates excellent fit with measurement data taken from foundry fabricated 180 nm bulk MOSFETs for the temperature range from 300 down to 4 K.

对于低温下MOSFET迁移率的深入研究相对较少,部分原因是由于缺乏合适的提取方法,并且散射机制比室温下更复杂。本文首次提出了一种新的y函数方法,该方法在物理和工程上都是新颖的,用于考虑库仑散射在低温下占主导地位的迁移率提取。这种新的y函数方法与从300到4 K温度范围内铸造制造的180 nm块状mosfet的测量数据非常吻合。
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引用次数: 0
Analytical Modeling of Base Transit Time in SiGe-HBTs Considering Recombination Effects Under Intermediate Injection Levels 中等注入水平下考虑复合效应的SiGe-HBTs基传递时间分析建模
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1002/jnm.70144
Muhammad Johirul Islam, Md. Iqbal Bahar Chowdhury

Analytical models of base transit time τB$$ left({tau}_Bright) $$ for SiGe-HBTs usually neglected carrier recombination in the base under the assumption of very thin base. The validity of this assumption is questionable under intermediate injection level (IIL) condition, which is common for highly-scaled devices operating in the high-current regime. However, consideration of recombination in the base along with various nonideal physical models reported in the literature under IIL condition leads to the analytical intractability of the governing differential equation (GDE). Therefore, this work intends to develop an analytically tractable τB$$ {tau}_B $$- model of SiGe-HBTs applicable under IIL conditions. The model also considers the effects of base width modulation (BWM) on τB$$ {tau}_B $$ to simulate the effects of the base pushout phenomena usually occurred at high-current regime. Close match of the simulated model data and experimentally measured data for the collector current density, total transit time, unity gain-bandwidth cutoff frequency and maximum frequency of oscillation validates the model quite well. It is noteworthy that significant deviation from the measured data has been observed for the model that does not consider recombination at high-current regime. Therefore, the proposed model not only provides the justification of the consideration of the effects of carrier recombination in the base to develop analytical τB$$ {tau}_B $$ model but also shows the practical significance of the developed model to guide the device engineers to design modern highly-scaled SiGe-based HBT devices operating in the high current regime, thereby meeting the requirement of sustainable industrialization to facilitate sustainable development goal 9 (SDG 9).

SiGe-HBTs的碱基迁移时间τ B $$ left({tau}_Bright) $$的分析模型通常在极薄碱基假设下忽略了碱基中的载流子重组。在中等注入水平(IIL)条件下,这一假设的有效性是值得怀疑的,这对于在大电流状态下运行的大规模设备是常见的。然而,由于考虑基体中的重组以及文献中报道的各种非理想物理模型在IIL条件下的存在,导致控制微分方程(GDE)的解析困难。因此,本工作旨在开发一种适用于il条件下SiGe-HBTs的解析可处理τ B $$ {tau}_B $$ -模型。该模型还考虑了基极宽度调制(BWM)对τ B $$ {tau}_B $$的影响,以模拟通常发生在大电流状态下的基极推出现象的影响。通过对集电极电流密度、总过电时间、单位增益带宽截止频率和最大振荡频率的仿真与实验数据的比较,验证了模型的正确性。值得注意的是,对于不考虑大电流下重组的模型,已观察到与测量数据的显著偏差。因此,该模型不仅为考虑载流子复合对基底τ B解析性$$ {tau}_B $$模型的影响提供了依据,而且表明了所建立的模型对指导器件工程师设计在大电流下工作的现代高尺度sigi基HBT器件的实际意义制度,从而满足可持续工业化的要求,以促进可持续发展目标9 (SDG 9)。
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引用次数: 0
Mathematical Model and Its Realization of Subthreshold Internal Membrane Dynamics and Implementation in CMOS Neuromorphic Systems 阈下膜动力学的数学模型及其实现及其在CMOS神经形态系统中的实现
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19 DOI: 10.1002/jnm.70143
M. A. Seenivasan, Prabir Saha, Shubhankar Majumdar

The ionic flow in biological neurons and electron flow in MOSFETs both exhibit nonlinear behavior, enabling transistors to mimic neuronal spiking. The transistor and capacitor networks form conductive channels analogous to ion channels Na+$$ {Na}^{+} $$, K+$$ {K}^{+} $$, Ca2+$$ {Ca}^{2+} $$, and Cl$$ {Cl}^{-} $$, generating membrane-like voltages and action potentials. The paper introduces mathematical modeling of a silicon neuron that incorporates membrane dynamics through an adaptation mechanism for neuromorphic compatibility. The derived modeling equations are inspired by calcium and voltage-activated potassium conductances that allow the circuit to self-regulate firing rates, preventing over-excitation and enabling energy-efficient, biologically plausible neuromorphic systems. The same is implemented in a proposed neuron circuit model that uses physical similarities between biological and silicon channels to accurately simulate action potentials and channel currents on the basis of modeling behavior. The design modulates excitatory ion currents and channel time constants, allowing the tuning of spike frequency across a wide range. The simulation results show that the neuron consumes an average power of 15.23 nW and energy efficiency 2.623 fJ/spike at a spike firing rate of 14.66 MHz, and highlight modeling to CMOS neuron implementation (45 nm GPDK, Cadence Virtuoso).

生物神经元中的离子流和mosfet中的电子流都表现出非线性行为,使晶体管能够模拟神经元尖峰。晶体管和电容器网络形成类似于离子通道Na + $$ {Na}^{+} $$, K + $$ {K}^{+} $$,ca2 + $$ {Ca}^{2+} $$和Cl−$$ {Cl}^{-} $$,产生膜样电压和动作电位。本文介绍了一个硅神经元的数学模型,该模型通过神经形态相容性的适应机制结合了膜动力学。导出的建模方程受到钙和电压激活钾电导的启发,这些电导允许电路自我调节放电速率,防止过度兴奋,并实现节能,生物学上合理的神经形态系统。该模型利用生物通道和硅通道之间的物理相似性,在建模行为的基础上精确地模拟动作电位和通道电流。该设计可调节激发离子电流和通道时间常数,允许在宽范围内调谐尖峰频率。仿真结果表明,在峰值发射速率为14.66 MHz时,神经元的平均功耗为15.23 nW,能量效率为2.623 fJ/峰值,并将其建模为CMOS神经元实现(45 nm GPDK, Cadence Virtuoso)。
{"title":"Mathematical Model and Its Realization of Subthreshold Internal Membrane Dynamics and Implementation in CMOS Neuromorphic Systems","authors":"M. A. Seenivasan,&nbsp;Prabir Saha,&nbsp;Shubhankar Majumdar","doi":"10.1002/jnm.70143","DOIUrl":"10.1002/jnm.70143","url":null,"abstract":"<p>The ionic flow in biological neurons and electron flow in MOSFETs both exhibit nonlinear behavior, enabling transistors to mimic neuronal spiking. The transistor and capacitor networks form conductive channels analogous to ion channels <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mi>Na</mi>\u0000 <mo>+</mo>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$$ {Na}^{+} $$</annotation>\u0000 </semantics></math>, <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mi>K</mi>\u0000 <mo>+</mo>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$$ {K}^{+} $$</annotation>\u0000 </semantics></math>, <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mi>Ca</mi>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 <mo>+</mo>\u0000 </mrow>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$$ {Ca}^{2+} $$</annotation>\u0000 </semantics></math>, and <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msup>\u0000 <mi>Cl</mi>\u0000 <mo>−</mo>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>$$ {Cl}^{-} $$</annotation>\u0000 </semantics></math>, generating membrane-like voltages and action potentials. The paper introduces mathematical modeling of a silicon neuron that incorporates membrane dynamics through an adaptation mechanism for neuromorphic compatibility. The derived modeling equations are inspired by calcium and voltage-activated potassium conductances that allow the circuit to self-regulate firing rates, preventing over-excitation and enabling energy-efficient, biologically plausible neuromorphic systems. The same is implemented in a proposed neuron circuit model that uses physical similarities between biological and silicon channels to accurately simulate action potentials and channel currents on the basis of modeling behavior. The design modulates excitatory ion currents and channel time constants, allowing the tuning of spike frequency across a wide range. The simulation results show that the neuron consumes an average power of 15.23 nW and energy efficiency 2.623 fJ/spike at a spike firing rate of 14.66 MHz, and highlight modeling to CMOS neuron implementation (45 nm GPDK, Cadence Virtuoso).</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146091250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 3-D Spatial Electromagnetic Field Analytical Model for a Domestic Induction Heating System With the Finite Dimension of the Electromagnetic Medium 考虑电磁介质尺寸有限的家用感应加热系统三维空间电磁场分析模型
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-14 DOI: 10.1002/jnm.70140
Zhichao Luo, Bowen Fu, Bo Zhang, Yiming Ma, Yumin Peng

The domestic induction heating system comprises a heating coil and electromagnetic media (ferromagnetic cookware and a magnetic shielding layer). Horizontal or vertical misalignments between the heating coil and cookware during operation inevitably alter the coil's equivalent self-inductance. This variation in self-inductance affects impedance matching and complicates power regulation. Currently, calculations of this parameter rely mainly on finite element analysis (FEA) methods. However, FEA methods require significant computational time and may encounter convergence issues due to poor mesh quality, especially when simulating thin layers with large aspect ratios, where stringent meshing requirements often lead to non-convergence near the surface. This work develops an extended analytical model that incorporates the finite size of the magnetic shielding layer and the finite conductivity of cookware materials (aluminum, 304 stainless steel, and 430 stainless steel). The proposed model accounts for variations in coil dimensions, the relative permeability of the magnetic shielding layer, and the conductivity of cookware materials. It achieves a computational speed five times faster than FEA simulations while maintaining an error of less than 5% compared to experimental results.

该家用感应加热系统包括加热线圈和电磁介质(铁磁炊具和磁屏蔽层)。在运行过程中加热线圈和炊具之间的水平或垂直错位不可避免地改变线圈的等效自感。这种自感的变化影响阻抗匹配,使功率调节复杂化。目前,该参数的计算主要依靠有限元分析(FEA)方法。然而,有限元分析方法需要大量的计算时间,并且由于网格质量差可能会遇到收敛问题,特别是在模拟具有大纵横比的薄层时,严格的网格划分要求通常会导致表面附近的不收敛。这项工作开发了一个扩展的分析模型,该模型结合了磁屏蔽层的有限尺寸和炊具材料(铝,304不锈钢和430不锈钢)的有限导电性。提出的模型考虑了线圈尺寸、磁屏蔽层的相对磁导率和炊具材料的电导率的变化。它的计算速度比有限元模拟快5倍,同时与实验结果相比误差小于5%。
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引用次数: 0
A Simple Machine Learning-Assisted Method for Optimal Antenna Design 一种简单的机器学习辅助天线优化设计方法
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-07 DOI: 10.1002/jnm.70142
Zhenyu Zhang, Bao Zhang, Ce Zhang, Feng Xu

This paper mainly designs the specific optimization process of antenna parameters or topology structure based on the online updated multi-layer perceptron (MLP) agent model, and introduces principal component analysis (PCA) technology to accelerate the overall optimization process. In addition, to address the problem of mixed optimization of machine learning assisted antenna parameters and topology structure, this paper proposes a new encoding approach, which enables two forms of variables to jointly participate in antenna optimization. The specific approach is to treat the topology structure and antenna parameters as a state and encode them in binary, thereby unifying them into a set of binary variables, which facilitates the introduction of subsequent machine learning and optimization algorithms. By optimizing an ultra-wideband G-patch monopole antenna and a microstrip pixel antenna, it has been demonstrated that the proposed method has better optimization performance compared to traditional optimization methods and can be applied to antenna parameters or topology structures.

本文主要基于在线更新的多层感知机(MLP)智能体模型设计天线参数或拓扑结构的具体优化过程,并引入主成分分析(PCA)技术加速整体优化过程。此外,为了解决机器学习辅助天线参数和拓扑结构的混合优化问题,本文提出了一种新的编码方法,使两种形式的变量共同参与天线优化。具体方法是将拓扑结构和天线参数作为一种状态进行二进制编码,从而统一为一组二进制变量,便于后续机器学习和优化算法的引入。通过对超宽带g贴片单极天线和微带像素天线的优化,证明了该方法比传统的优化方法具有更好的优化性能,可以应用于天线参数或拓扑结构。
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引用次数: 0
Elliptical Approach of the Wave Concept Iterative Method for Electromagnetic Scattering by Inhomogeneous Multilayer Cylindrical Structure 非均匀多层圆柱结构电磁散射波概念迭代法的椭圆逼近
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-26 DOI: 10.1002/jnm.70137
Ahmed Boutta, Noemen Ammar, Asmaa Zugari, Naji Yebari

This study introduces a new formulation of the Wave Concept Iterative Process (WCIP) method in elliptic coordinates to analyze electromagnetic scattering from an infinitely long, inhomogeneous, multilayered elliptical cylinder. The foundation of this approach lies in the definition of emitted and reflected waves at the interfaces of dissimilar media, utilizing the tangential components of the electric field and current density. The unknown waves resolved from a set of two equations. The first equation, formulated in the spectral domain, characterizes the response of the environment around the structure. The second equation guarantees the continuity of the electromagnetic fields and enforces boundary conditions at the interfaces that separate different regions. The system of equations is resolved by an iterative process where a discrete angular Mathieu Transformation Algorithm is introduced to toggling between the spatial and the modal domain. The proposed approach is suitably implemented in a specific computational code to achieve a numerical solution. Some numerical results are presented, involving a structure composed of metallic strips positioned at the interfaces of four elliptical dielectric layers, which is illuminated by a transverse magnetic (TM) plane wave at an oblique angle of incidence. The result is in agreement with those published in the literature.

本文提出了一种新的椭圆坐标下的波概念迭代过程(WCIP)方法,用于分析无限长、非均匀、多层椭圆柱体的电磁散射。该方法的基础在于利用电场和电流密度的切向分量来定义不同介质界面上的发射波和反射波。未知的波由一组两个方程解出。第一个方程在谱域中表示,表征了结构周围环境的响应。第二个方程保证电磁场的连续性,并在分离不同区域的界面处施加边界条件。在空间域和模态域之间引入离散角马蒂厄变换算法,通过迭代求解系统的方程。所提出的方法在特定的计算代码中适当地实现,以实现数值解。本文给出了在斜入射角横磁平面波照射下,由位于四个椭圆介质层界面的金属条组成的结构的一些数值结果。该结果与文献中发表的结果一致。
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引用次数: 0
Analytical Impact of Temperature on Ferroelectric Junction-Less Surrounding-Gate FET: Electrical Perspective 温度对铁电无结环栅场效应管的影响分析:电学角度
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-26 DOI: 10.1002/jnm.70135
Shalu Garg, Jasdeep Kaur, Anubha Goel, R. S. Gupta, Subhasis Haldar

This article presents a comprehensive temperature-dependent analysis of Ferroelectric Junction-less Surrounding-Gate FETs (Fe-JL-SG FETs). To evaluate the effectiveness of ferroelectric integration, a detailed comparison between Fe-JL-SG FETs and conventional Junction-less Surrounding-Gate FETs (JL-SG FETs) is carried out. Key device parameters—including surface potential, electric field, electron concentration, electron velocity, transconductance (gm), output conductance (gd), capacitance (CGG), cutoff frequency (ft), and ION/IOFF ratio—are systematically investigated over a broad temperature range (100–500 K). The results demonstrate that Fe-JL-SG FETs exhibit superior electrical and analog performance with significantly reduced sensitivity to temperature variations compared to JL-SG FETs. This enhanced behavior is attributed to the negative capacitance effect introduced by the ferroelectric material, which effectively reduces the subthreshold-swing (SS) below the Boltzmann limit (60 mV/decade). However, this effect weakens as temperature increases. The simulation framework, developed using the ATLAS 3-D device simulator, exhibits strong congruence with the proposed analytical model, thereby validating the theoretical constructs and reinforcing the predictive reliability of the developed approach.

本文对铁电无结环栅场效应管(Fe-JL-SG fet)的温度依赖性进行了全面分析。为了评估铁电集成的有效性,对Fe-JL-SG fet和传统的无结环栅fet (JL-SG fet)进行了详细的比较。关键器件参数-包括表面电位,电场,电子浓度,电子速度,跨导(gm),输出电导(gd),电容(CGG),截止频率(ft)和离子/IOFF比-在广泛的温度范围(100-500 K)系统地研究。结果表明,与JL-SG fet相比,Fe-JL-SG fet具有优异的电学和模拟性能,对温度变化的灵敏度显著降低。这种增强的行为归因于铁电材料引入的负电容效应,它有效地降低了低于玻尔兹曼极限(60 mV/ 10年)的亚阈值摆幅(SS)。然而,这种效应随着温度的升高而减弱。利用ATLAS三维设备模拟器开发的仿真框架与所提出的分析模型具有很强的一致性,从而验证了理论结构并增强了所开发方法的预测可靠性。
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引用次数: 0
Modeling and Machine Learning Assisted Optimization of FSS Integrated Tree-Shaped MIMO Fractal Antenna With Enhanced Gain for Next-Generation 5G mm-Wave Communication Systems 下一代5G毫米波通信系统中增强增益的FSS集成树形MIMO分形天线建模和机器学习辅助优化
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-26 DOI: 10.1002/jnm.70136
K. Vasu Babu, Gorre Naga Jyothi Sree, Sudipta Das, Tanvir Islam, Wael A. E. Ali, Abeer D. Algarni

This research presents the design and optimization of a miniaturized frequency-selective surface (FSS)-embedded fractal MIMO antenna for 28 GHz 5G New Radio (NR) applications. The compact antenna, measuring 4.2 × 1.87 λ, employs a 7 × 3 unit-cell array to achieve superior radiation characteristics. The design methodology integrates fractal geometry analysis, FSS loading for electromagnetic enhancement, and machine learning-based optimization to achieve optimal gain, impedance bandwidth, and radiation efficiency. The antenna, realized on a Rogers RT5880 substrate, is optimized using Random Forest (RF), Artificial Neural Network (ANN), and regression-based predictive models. Performance evaluation using R2, MAE, and MSE confirms the robustness of the optimization framework. Key design challenges include maintaining high isolation among compact MIMO elements, ensuring stable broadband response, and balancing miniaturization with gain without sacrificing efficiency. These challenges are addressed through precise geometric refinement, effective FSS coupling, and iterative machine learning tuning. Experimental validation using a ZVA 67 vector network analyzer demonstrates a broad impedance bandwidth of 2200 MHz (26–28.2 GHz), a peak gain of 7.53 dBi, and a radiation efficiency of 88.49%. The FSS integration enhances isolation, suppresses surface waves, and improves overall mm Wave performance. The proposed ML-assisted FSS-MIMO design provides an efficient solution for next-generation 5G wireless communication systems.

本研究提出了一种用于28 GHz 5G新无线电(NR)应用的小型化频率选择表面(FSS)嵌入分形MIMO天线的设计和优化。紧凑的天线,测量4.2 × 1.87 λ,采用7 × 3单元阵列,以获得优越的辐射特性。该设计方法集成了分形几何分析、FSS加载电磁增强和基于机器学习的优化,以实现最佳增益、阻抗带宽和辐射效率。该天线在Rogers RT5880衬底上实现,使用随机森林(RF)、人工神经网络(ANN)和基于回归的预测模型进行优化。使用R2、MAE和MSE的性能评估证实了优化框架的鲁棒性。关键的设计挑战包括在紧凑型MIMO元件之间保持高隔离,确保稳定的宽带响应,以及在不牺牲效率的情况下平衡小型化和增益。这些挑战是通过精确的几何细化、有效的FSS耦合和迭代机器学习调优来解决的。在ZVA 67矢量网络分析仪上进行的实验验证表明,该天线具有2200 MHz (26-28.2 GHz)的宽阻抗带宽,峰值增益为7.53 dBi,辐射效率为88.49%。FSS集成增强隔离,抑制表面波,提高整体毫米波性能。提出的ml辅助FSS-MIMO设计为下一代5G无线通信系统提供了有效的解决方案。
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引用次数: 0
期刊
International Journal of Numerical Modelling-Electronic Networks Devices and Fields
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