Enhanced Thermoelectric Performance of Cu2−xRExSe (x = 0–0.2) by Doping with Rare Earth Elements Tm, Er, and Lu

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-08-09 DOI:10.1007/s11664-024-11349-6
Yunkai Li, Lige Wang, Ruizhi Yang, Li Liang, Qingdong Luan, Jing Liu
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Abstract

Copper selenide (Cu2Se) has attracted extensive research interest in the field of thermoelectricity due to its large abundance of constituent elements, environmental friendliness, and excellent thermoelectric properties. In this study, a facile and low-cost hydrothermal synthesis method combined with vacuum sintering was used for Cu2Se-based sample preparation, and the possibility of improving the thermoelectric properties of Cu2Se by doping with rare earth elements (Tm, Er, Lu) was explored using experimental tests and density functional theory calculations. The electronic structure calculations show that the electrical conductivity is increased due to the increased electron density after rare earth element doping. At the same time, the sharp increase in the density of states at the Fermi level after rare earth element doping enhances the Seebeck coefficient of the Cu2Se matrix. The experimental results show that the thermoelectric properties of all the samples doped with rare earth elements (Tm, Er, Lu) were improved compared to the Cu2Se matrix. The doping of rare earth elements led to an increase in point defects and the formation of pores in the samples, which play an important role in reducing the thermal conductivity. Among them, the Tm-doped Cu1.995Tm0.005Se sample reached a maximum ZT value of 0.80 at 773 K, which is a nearly 43% increase compared to the Cu2Se matrix (ZTmax = 0.56).

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通过掺杂稀土元素 Tm、Er 和 Lu 增强 Cu2-xRExSe(x = 0-0.2)的热电性能
硒化铜(Cu2Se)以其丰富的组成元素、环境友好性和优异的热电性能在热电领域引起了广泛的研究兴趣。本研究采用简便、低成本的水热合成法结合真空烧结法制备了基于 Cu2Se 的样品,并利用实验测试和密度泛函理论计算探讨了通过掺杂稀土元素(Tm、Er、Lu)改善 Cu2Se 热电性能的可能性。电子结构计算表明,稀土元素掺杂后电子密度增加,从而提高了导电性。同时,稀土元素掺杂后费米级态密度的急剧增加提高了 Cu2Se 基体的塞贝克系数。实验结果表明,与 Cu2Se 基体相比,所有掺杂稀土元素(Tm、Er、Lu)的样品的热电性能都得到了改善。稀土元素的掺杂导致样品中点缺陷的增加和孔隙的形成,这对降低热导率起着重要作用。其中,掺杂 Tm 的 Cu1.995Tm0.005Se 样品在 773 K 时的 ZT 最大值为 0.80,与 Cu2Se 基体(ZTmax = 0.56)相比提高了近 43%。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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