Durgesh Kumar, Ramu Maddu, Hong Jing Chung, Hasibur Rahaman, Tianli Jin, Sabpreet Bhatti, Sze Ter Lim, Rachid Sbiaa and S. N. Piramanayagam
{"title":"Emulation of neuron and synaptic functions in spin–orbit torque domain wall devices†","authors":"Durgesh Kumar, Ramu Maddu, Hong Jing Chung, Hasibur Rahaman, Tianli Jin, Sabpreet Bhatti, Sze Ter Lim, Rachid Sbiaa and S. N. Piramanayagam","doi":"10.1039/D3NH00423F","DOIUrl":null,"url":null,"abstract":"<p >Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin–orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We have performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 11","pages":" 1962-1977"},"PeriodicalIF":8.0000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale Horizons","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/nh/d3nh00423f","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin–orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We have performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.
期刊介绍:
Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.