Zhiyuan Luo;Zhengdong Jiang;Kekang Liu;Peicheng Jiao;Yanghui Liu
{"title":"Lithium Solid Electrolyte-Gated Oxide Transistors-Based Schmitt Trigger With High Thermal Resistance","authors":"Zhiyuan Luo;Zhengdong Jiang;Kekang Liu;Peicheng Jiao;Yanghui Liu","doi":"10.1109/LED.2024.3441054","DOIUrl":null,"url":null,"abstract":"Electrolyte-gated transistors (EGTs) can operate at very low voltages owing to their large electric-double-layer capacitance. However, the evaporation of water in the electrolyte can lead to electrolyte failure in harsh high-temperature environments resulting in a decrease in the electrical performance of EGTs. Meanwhile, oxide-based lithium solid-state electrolytes exhibit excellent thermal stability due to high oxygen loss and thermal decomposition temperature. In this work, we utilized LiPON solid-state electrolytes as the gate dielectrics to fabricate a high-temperature resistant EGT, which achieved high mobility of 32.87 cm\n<sup>2</sup>\n V\n<sup>−1</sup>\n s\n<sup>−1</sup>\n under 393 K. Moreover, we developed a Schmitt trigger due to the large hysteresis window of the LiPON EGT at high temperatures. The switching speed and shape pulse wave ability of the Schmitt trigger have been improved compared to room temperature. These findings offer high-temperature applications of LiPON electrolyte in electrochemical sensors and neuromorphic systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10632164/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Electrolyte-gated transistors (EGTs) can operate at very low voltages owing to their large electric-double-layer capacitance. However, the evaporation of water in the electrolyte can lead to electrolyte failure in harsh high-temperature environments resulting in a decrease in the electrical performance of EGTs. Meanwhile, oxide-based lithium solid-state electrolytes exhibit excellent thermal stability due to high oxygen loss and thermal decomposition temperature. In this work, we utilized LiPON solid-state electrolytes as the gate dielectrics to fabricate a high-temperature resistant EGT, which achieved high mobility of 32.87 cm
2
V
−1
s
−1
under 393 K. Moreover, we developed a Schmitt trigger due to the large hysteresis window of the LiPON EGT at high temperatures. The switching speed and shape pulse wave ability of the Schmitt trigger have been improved compared to room temperature. These findings offer high-temperature applications of LiPON electrolyte in electrochemical sensors and neuromorphic systems.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.