High-Performance Self-Powered Photodetectors Based on TMD Alloy/GaAs van der Waals Heterojunctions for Infrared Light Communication

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-09 DOI:10.1109/LED.2024.3440996

Yansong Wang;Wenliang Wang

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Abstract

In recent years, the demand for high-speed infrared light communication has increased the performance requirement for infrared photodetectors (PDs). Two-dimensional layered material (2DLM)/GaAs heterojunctions PDs can be self-powered with simple structure and no dangling bonds. However, 2DLM faces the problems of limited structure quantity and significant influence from deep level defects, which limits the band modulation and the performance of PDs. In this work, transition metal dichalcogenide (TMD) alloy/GaAs van der Waals heterojunctions PDs have been constructed, achieving band alignment of type II band structure. The as-fabricated MoS _0.62 Se _1.38 /GaAs PDs present a high responsivity (1.54 A/W) and fast response speed with the rise/fall time of

$90~\mu $

$275~\mu $

s at 0 bias voltage. Furthermore, a demonstration of infrared light communication is presented based on MoS _0.62 Se _1.38 /GaAs PDs. This study sheds light that the TMD alloy/GaAs heterojunctions have great potential in the infrared PDs and light communication.

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基于 TMD 合金/砷化镓范德华异质结的高性能自供电光电探测器，用于红外光通信

近年来，高速红外光通信的需求提高了对红外光探测器（PDs）性能的要求。二维层状材料（2DLM）/砷化镓异质结 PD 具有结构简单、无悬空键等特点，可实现自供电。然而，二维层状材料面临着结构数量有限和深层缺陷影响较大的问题，从而限制了PDs的能带调制和性能。本研究构建了过渡金属二卤化物（TMD）合金/砷化镓范德华异质结 PD，实现了 II 型带结构的带排列。制备的 MoS0.62 Se1.38/GaAs PD 具有高响应率（1.54 A/W）和快速响应速度，在 0 偏置电压下的上升/下降时间为 90~\mu $ s/ 275~\mu $ s。此外，还展示了基于 MoS0.62 Se1.38/GaAs PD 的红外光通信。这项研究揭示了TMD合金/砷化镓异质结在红外PD和光通信方面的巨大潜力。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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