Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-05 DOI:10.1109/LED.2024.3438807

G. Greco;P. Fiorenza;F. Giannazzo;M. Vivona;C. Venuto;F. Iucolano;F. Roccaforte

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Abstract

The current transport mechanism at metal gate/p-GaN interface in p-GaN HETMs has been investigated. Space Charge Limited Current (SCLC) well describes the behaviour of current density (J _G ) at lower applied bias (V

$_{\text {G}} \lt 6$

V), while Thermionic Field Emission (TFE) represents the dominant current mechanism at higher V _G . Then, p-GaN gate reliability was investigated by time-to-failure (TTF) analysis carried out at constant positive V _G . In particular, the devices’ lifetime as function of the applied V _G was described considering the J _G -V _G dependence according the TFE model. In this way, a maximum V _G for 10-year lifetime (V

$_{\text {Gmax}}^{{10}~\text {years}}$

) of 8.5 V has been estimated, significantly higher than that extracted by conventional E-model (7 V).

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p-GaN 栅极 HEMT 寿命估算中的热离子场发射

我们研究了 p-GaN HETMs 中金属栅/p-GaN 界面的电流传输机制。空间电荷限制电流（SCLC）很好地描述了较低应用偏压（V $_{\text {G}} \lt 6$ V）下的电流密度（JG）行为，而热电场发射（TFE）则代表了较高 VG 下的主导电流机制。然后，通过在恒定正 VG 下进行的失效时间 (TTF) 分析，研究了 p-GaN 栅极的可靠性。特别是，根据 TFE 模型，考虑到 JG-VG 相关性，器件的寿命与应用 VG 的函数关系得到了描述。通过这种方法，我们估算出 10 年寿命的最大 VG 值（V $_{\text {Gmax}}^{{10}~text {years}}$ ）为 8.5 V，明显高于传统 E 模型提取的值（7 V）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.