Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-05 DOI:10.1109/LED.2024.3438880
Haoran Guo;Ziliang Fang;Mingxu Yang;Hanrong Xie;Manyan Xie;Rui Rong;Yuming Wei;Gangding Peng;Tiefeng Yang;Heyuan Guan;Huihui Lu
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Abstract

Conventional photodetectors are increasingly unable to achieve the demands of multifunctionality, low power consumption and miniaturization for the emerging intelligent imaging systems, because of their monotonous light-to-electric conversion mechanism. Ferroelectrics, known for their tunable polarization and extraordinary physical effects, offer promising solutions. Through mask-assisted deposition, relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 ) O 3 –PbTiO 3 (PMN-PT) based photodetectors were constructed and exhibit dual-mode photoresponse characteristics. At 0 V, typical symmetric spikes caused by the pyroelectric effect (PE) can be seen from the visible to the near-infrared band. Intriguingly, upon 405 nm excitation at proper bias voltages, the photoresponse transforms into a bulk photovoltaic effect (BPVE) dominated square shape. The bias-modulated dual-mode photodetector owns promise potential in the advanced vehicle monitor system, in which the PE can be used to sense the approaching and subsequently active the BPVE to capture the vehicle, showing great advantage in energy saving. This work provides a feasible idea for intelligent optoelectronic devices by using the PE and BPVE of ferroelectrics.
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基于松弛铁电 PMN-PT 单晶的智能双模光电探测器
传统的光电探测器由于其单调的光电转换机制,越来越无法满足新兴智能成像系统对多功能、低功耗和微型化的要求。以可调偏振和非凡物理效应著称的铁电体提供了前景广阔的解决方案。通过掩模辅助沉积,构建了基于弛豫铁电 Pb(Mg1/3 Nb2/3)O3-PbTiO3(PMN-PT)的光电探测器,并显示出双模光响应特性。在 0 V 电压下,可以看到由热释电效应(PE)引起的从可见光到近红外波段的典型对称尖峰。有趣的是,在适当偏置电压下激发 405 纳米波长时,光响应会转变为以体光效应(BPVE)为主的方形。这种偏压调制双模光电探测器有望应用于先进的车辆监控系统,其中 PE 可用于感知车辆的接近,随后启动 BPVE 捕获车辆,在节能方面具有很大优势。这项工作为利用铁电的 PE 和 BPVE 实现智能光电器件提供了一个可行的思路。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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