{"title":"Electronic and optical properties of several cluster-assembled materials based on Zn12O12: a first-principles study","authors":"Peixian Wang, Bin Song, Gaoling Zhao","doi":"10.1007/s00214-024-03139-4","DOIUrl":null,"url":null,"abstract":"<p>Based on the first-principles calculations, we systematically studied and fully characterized the electronic structure and optical properties of four novel ZnO phases assembled by Zn<sub>12</sub>O<sub>12</sub> clusters and compared them with the results of wurtzite (WZ) ZnO. The results show that the density of states of the four cluster-assembled materials is similar to that of WZ-ZnO, but the bandgap is larger than that of the latter. Among them, FAU-ZnO, LTA-ZnO, and SOD-ZnO are direct bandgap semiconductors. The calculation of the optical properties of SOD-ZnO is most similar to those of WZ-ZnO, but R-ZnO has higher static permittivity, reflection, and refraction coefficients. Considering that the presence of cage-like voids in cluster-assembled materials is more conducive to doping of various elements, cluster-assembled materials are more likely to change the bandgap and corresponding electronic structure through doping than WZ-ZnO. From this perspective, these two materials have great potential for photocatalytic and optoelectronic device applications.</p>","PeriodicalId":23045,"journal":{"name":"Theoretical Chemistry Accounts","volume":"3 1","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Theoretical Chemistry Accounts","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1007/s00214-024-03139-4","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Based on the first-principles calculations, we systematically studied and fully characterized the electronic structure and optical properties of four novel ZnO phases assembled by Zn12O12 clusters and compared them with the results of wurtzite (WZ) ZnO. The results show that the density of states of the four cluster-assembled materials is similar to that of WZ-ZnO, but the bandgap is larger than that of the latter. Among them, FAU-ZnO, LTA-ZnO, and SOD-ZnO are direct bandgap semiconductors. The calculation of the optical properties of SOD-ZnO is most similar to those of WZ-ZnO, but R-ZnO has higher static permittivity, reflection, and refraction coefficients. Considering that the presence of cage-like voids in cluster-assembled materials is more conducive to doping of various elements, cluster-assembled materials are more likely to change the bandgap and corresponding electronic structure through doping than WZ-ZnO. From this perspective, these two materials have great potential for photocatalytic and optoelectronic device applications.
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