The origin and mitigation of defects induced by metal evaporation in 2D materials

IF 31.6 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: R: Reports Pub Date : 2024-07-26 DOI:10.1016/j.mser.2024.100831
Wenwen Zheng, Bin Yuan, Marco A. Villena, Kaichen Zhu, Sebastian Pazos, Yaqing Shen, Yue Yuan, Yue Ping, Chen Liu, Xiaowen Zhang, Xixiang Zhang, Mario Lanza
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Abstract

Evaporating metallic films on two-dimensional (2D) materials is a necessary process to build electronic devices, but it produces bond breaking and metal penetration in the 2D material, which degrades its properties and the figures-of-merit of the devices. Evaporating the metal in ultra-high vacuum (10−9 Torr) is a recognized method to reduce the damage, but the higher complexity and cost of the setup and its lower throughput makes developing other solutions highly desirable. All studies on ultra-high vacuum evaporation of metals on 2D materials evaluated the figures-of-merit of transistors fabricated following different protocols, with very scarce or without sub-nanometre information. Moreover, such studies employed 2D materials produced by chemical vapour deposition (CVD), which contain relatively large amounts of native defects, and hence, post-evaporation analyses do not allow identifying which defects are native and which ones are generated during metal evaporation. In this article we analyse the structure of defect-free mechanically exfoliated 2D materials via cross-sectional transmission electron microscopy (TEM) before and after Au evaporation (on top), and calculate the density of defects introduced. We find that evaporating the metal in a moderate vacuum atmosphere of 5 × 10−6 Torr is sufficient to avoid damage, leading to a nearly perfect van der Waals interface. By using density functional theory simulations we find that the presence of water molecules on the surface of the 2D material slightly distorts the position of the atoms in the crystalline hexagonal network, weakening the covalent bonds and reducing the energy for defect formation. We fabricate Au/h-BN/Au devices and observe that evaporating the Au at 5 × 10−6 Torr produces much less out-of-plane leakage current than evaporating at 3 × 10−5 Torr. The approaches here presented are easy to use and facilitate the introduction of 2D materials in electronic devices and circuits.

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二维材料中金属蒸发诱发缺陷的起源与缓解
在二维(2D)材料上蒸发金属膜是制造电子设备的必要过程,但这一过程会导致二维材料中的键断裂和金属渗透,从而降低其性能和设备的性能指标。在超高真空(10-9 托)中蒸发金属是一种公认的减少损坏的方法,但这种方法的复杂性较高,成本较高,产量较低,因此非常需要开发其他解决方案。所有关于在二维材料上进行金属超高真空蒸发的研究都评估了按照不同方案制造的晶体管的性能指标,但很少或没有亚纳米级的信息。此外,这些研究采用的二维材料是通过化学气相沉积(CVD)工艺制作的,其中含有相对大量的原生缺陷,因此蒸发后分析无法确定哪些缺陷是原生缺陷,哪些缺陷是在金属蒸发过程中产生的。在这篇文章中,我们通过横截面透射电子显微镜(TEM)分析了金蒸发前后无缺陷机械剥离二维材料的结构,并计算了引入的缺陷密度。我们发现,在 5 × 10-6 托的中等真空环境中蒸发金属足以避免损坏,从而形成近乎完美的范德华界面。通过使用密度泛函理论模拟,我们发现二维材料表面水分子的存在会轻微扭曲晶体六边形网络中原子的位置,从而削弱共价键并降低缺陷形成的能量。我们制造了金/h-BN/金器件,并观察到在 5 × 10-6 托的条件下蒸发金所产生的面外漏电流比在 3 × 10-5 托的条件下蒸发金所产生的面外漏电流要小得多。本文介绍的方法易于使用,有利于在电子器件和电路中引入二维材料。
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来源期刊
Materials Science and Engineering: R: Reports
Materials Science and Engineering: R: Reports 工程技术-材料科学:综合
CiteScore
60.50
自引率
0.30%
发文量
19
审稿时长
34 days
期刊介绍: Materials Science & Engineering R: Reports is a journal that covers a wide range of topics in the field of materials science and engineering. It publishes both experimental and theoretical research papers, providing background information and critical assessments on various topics. The journal aims to publish high-quality and novel research papers and reviews. The subject areas covered by the journal include Materials Science (General), Electronic Materials, Optical Materials, and Magnetic Materials. In addition to regular issues, the journal also publishes special issues on key themes in the field of materials science, including Energy Materials, Materials for Health, Materials Discovery, Innovation for High Value Manufacturing, and Sustainable Materials development.
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