Injection Locked Low Noise Chip-Based Silica Soliton Microwave Oscillator

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-07-05 DOI:10.1109/JSTQE.2024.3423774
Ziqi Wei;Zhaoyu Cai;Daewon Suk;Changxi Yang;Hansuek Lee;Chengying Bao
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Abstract

Microsonator-based photonic microwave oscillators can deliver ultralow phase noise with a compact form factor and a low power consumption. Here, we report on a low noise microwave oscillator at 10 GHz using a chip-based silica wedge soliton microcomb. By operating in a quiet point, the phase noise at the offset frequency of 100 kHz (10 kHz) can reach −143 dBc/Hz (−132 dBc/Hz). By measuring the phase noise under different amplified microcomb powers, we find that the phase noise at the offset frequencies above 1 MHz are limited by the photodetector, instead of shot noise. The phase noise for low offset frequencies is suppressed by injection locking to a high quality commercial electric oscillator. When locked, the soliton microcomb oscillator can purify the electric oscillator more than 10 dB at the offset frequency of hundreds of kHz. Different from previous results in a MgF $_{2}$ microcavity, no deterioration of the phase noise at high offset frequencies due to injection locking is observed. The injection locking is relatively loose for the silica mcirocomb operating in the quiet point, with phase noise reduction only observed below an offset frequency of kHz. Our measurements show how the injection locking impacts the low noise silica soliton oscillators.
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注入锁定式低噪声片基硅孤子微波振荡器
基于微谐振器的光子微波振荡器可以提供超低相位噪声,而且外形紧凑、功耗低。在此,我们报告了一种使用基于芯片的二氧化硅楔形孤子微蜂窝的 10 GHz 低噪声微波振荡器。在安静点工作时,偏移频率为 100 kHz(10 kHz)时的相位噪声可达 -143 dBc/Hz(-132 dBc/Hz)。通过测量不同放大微蜂窝功率下的相位噪声,我们发现偏移频率高于 1 MHz 时的相位噪声受到光电探测器的限制,而不是射出噪声。低偏移频率的相位噪声可通过注入锁定到高质量商用电振荡器来抑制。锁定后,孤子微蜂窝振荡器可在数百千赫的偏移频率下将电振荡器净化 10 分贝以上。与以往在 MgF$_{2}$ 微腔中的结果不同,在高偏移频率下没有观察到注入锁定导致的相位噪声恶化。对于工作在安静点的二氧化硅微腔来说,注入锁定相对较松,只有在偏移频率低于 kHz 时才能观察到相位噪声的降低。我们的测量结果表明了注入锁定对低噪声二氧化硅孤子振荡器的影响。
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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