Pub Date : 2025-01-01DOI: 10.1109/JSTQE.2024.3522405
{"title":"2024 Index IEEE Journal of Selected Topics in Quantum Electronics Vol. 30","authors":"","doi":"10.1109/JSTQE.2024.3522405","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3522405","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-28"},"PeriodicalIF":4.3,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10819971","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1109/JSTQE.2024.3523402
Alireza Geravand;Erwan Weckenmann;Zibo Zheng;Jean-Michel Vallée;Simon Levasseur;Leslie Rusch;Wei Shi
Energy-efficient coherent optics is emerging as a key solution to address the escalating communication demands of large-scale artificial intelligence (AI) and machine learning (ML) tasks. These applications require compact, high-speed, and energy-efficient coherent transceivers. We present an ultra-compact, all-silicon I/Q modulator operating in the O-band, specifically designed for coherent interconnects. The modulator leverages microring-assisted Mach-Zehnder modulators (MRA-MZMs) in a single-drive push-pull configuration, ensuring low-chirp modulation as well as precise electrical phase matching in the push-pull operation. We demonstrate a 6-dB electro-optical bandwidth of 54 GHz and achieve QPSK modulation at speeds up to 120 Gbaud, resulting in a net bit rate of 200 Gbps per wavelength and polarization. With its compact design, the modulator achieves a bandwidth density of 2 Tbps/mm. Furthermore, its versatile architecture supports wavelength division multiplexing and dual-polarization, enabling further capacity expansion.
{"title":"Micrometer-Scale Silicon Modulator for O-Band Coherent Interconnects Beyond 100 GBaud","authors":"Alireza Geravand;Erwan Weckenmann;Zibo Zheng;Jean-Michel Vallée;Simon Levasseur;Leslie Rusch;Wei Shi","doi":"10.1109/JSTQE.2024.3523402","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3523402","url":null,"abstract":"Energy-efficient coherent optics is emerging as a key solution to address the escalating communication demands of large-scale artificial intelligence (AI) and machine learning (ML) tasks. These applications require compact, high-speed, and energy-efficient coherent transceivers. We present an ultra-compact, all-silicon I/Q modulator operating in the O-band, specifically designed for coherent interconnects. The modulator leverages microring-assisted Mach-Zehnder modulators (MRA-MZMs) in a single-drive push-pull configuration, ensuring low-chirp modulation as well as precise electrical phase matching in the push-pull operation. We demonstrate a 6-dB electro-optical bandwidth of 54 GHz and achieve QPSK modulation at speeds up to 120 Gbaud, resulting in a net bit rate of 200 Gbps per wavelength and polarization. With its compact design, the modulator achieves a bandwidth density of 2 Tbps/mm. Furthermore, its versatile architecture supports wavelength division multiplexing and dual-polarization, enabling further capacity expansion.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-26DOI: 10.1109/JSTQE.2024.3522509
Ahmad Salmanogli;Hesam Zandi;Mohsen Akbari
The weak quantum signal amplification is an essential task in quantum computing. In this study, a recently introduced structure of Josephson junctions array called Blochnium (N series Quarton structure) is utilized as a parametric amplifier. We begin by theoretical deriving the system's Lagrangian, quantum Hamiltonian, and then analyze the dynamics using the quantum Langevin equation. By transforming these equations into the Fourier domain and employing the input-output formalism, leading metric indicators of the parametric amplifier become calculated. The new proposed design offers significant advantages over traditional designs due to its ability to manipulate nonlinearity. This premier feature enhances the compression point (P1dB) of the amplifier dramatically, and also provides its tunability across a broad band. The enhanced linearity, essential for quantum applications, is achieved through effective nonlinearity management, which is theoretically derived. Also, the ability to sweep the C-band without significant spectral overlap is crucial for frequency multiplexing in scalable quantum systems. Simulation results show that Blochnium parametric amplifiers can reach to a signal gain around 25 dB with a compression point better than of −92 dBm. Therefore, our proposed parametric amplifier, with its superior degree of freedom, surpasses traditional designs like arrays of Josephson junctions, making it a highly promising candidate for advanced quantum computing applications.
{"title":"Blochnium-Based Josephson Junction Parametric Amplifiers: Superior Tunability and Linearity","authors":"Ahmad Salmanogli;Hesam Zandi;Mohsen Akbari","doi":"10.1109/JSTQE.2024.3522509","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3522509","url":null,"abstract":"The weak quantum signal amplification is an essential task in quantum computing. In this study, a recently introduced structure of Josephson junctions array called Blochnium (N series Quarton structure) is utilized as a parametric amplifier. We begin by theoretical deriving the system's Lagrangian, quantum Hamiltonian, and then analyze the dynamics using the quantum Langevin equation. By transforming these equations into the Fourier domain and employing the input-output formalism, leading metric indicators of the parametric amplifier become calculated. The new proposed design offers significant advantages over traditional designs due to its ability to manipulate nonlinearity. This premier feature enhances the compression point (P<sub>1dB</sub>) of the amplifier dramatically, and also provides its tunability across a broad band. The enhanced linearity, essential for quantum applications, is achieved through effective nonlinearity management, which is theoretically derived. Also, the ability to sweep the C-band without significant spectral overlap is crucial for frequency multiplexing in scalable quantum systems. Simulation results show that Blochnium parametric amplifiers can reach to a signal gain around 25 dB with a compression point better than of −92 dBm. Therefore, our proposed parametric amplifier, with its superior degree of freedom, surpasses traditional designs like arrays of Josephson junctions, making it a highly promising candidate for advanced quantum computing applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-frequency sine wave gating (SWG) InGaAs/InP single-photon detectors (SPDs) are widely used for synchronous near-infrared single-photon detection. For practical use, the size of SPD is one of the most concerning features for system integration. Here we present, to the best of our knowledge, the most compact and fully functional high-frequency SWG InGaAs/InP SPD. We develop a sine wave gating integrated circuit (SWGIC) using system-in-package technology that supports functions including large amplitude sine wave gate generation, coincidence gate generation, phase regulation, amplitude monitoring, and amplitude modulation. Moreover, we design and fabricate a high-performance multi-mode fiber coupled InGaAs/InP single-photon avalanche diode (SPAD) with a compact butterfly package. Furthermore, we implement a monolithically integrated readout circuit (MIRC) to extract the weak avalanche signal from large capacitance response of SWG. Finally, the SWGIC, SPAD, MIRC, and the affiliated circuits are integrated into a single module with a size of 6 cm × 5.7 cm × 1.7 cm. After characterization, the SPD module exhibits a photon detection efficiency of 40%, a dark count rate of 9 kcps, and an afterpulse probability of 4.6% at an operation temperature of 238 K and a hold-off time of 160 ns. Our work provides a practical solution for applications necessitating highly integrated near-infrared single-photon detection.
高频正弦波门控InGaAs/InP单光子探测器（SPDs）广泛应用于同步近红外单光子探测。在实际应用中，SPD的尺寸是系统集成中最重要的特性之一。在这里，据我们所知，我们展示了最紧凑、功能齐全的高频SWG InGaAs/InP SPD。我们开发了一种正弦波门控集成电路（SWGIC），采用系统级封装技术，支持包括大振幅正弦波门生成、重合门生成、相位调节、幅度监测和幅度调制在内的功能。此外，我们设计并制造了一个高性能的多模光纤耦合InGaAs/InP单光子雪崩二极管（SPAD），具有紧凑的蝴蝶封装。此外，我们实现了一个单片集成读出电路（MIRC），从SWG的大电容响应中提取微弱的雪崩信号。最后，将SWGIC、SPAD、MIRC及其附属电路集成到一个尺寸为6 cm × 5.7 cm × 1.7 cm的模块中。经过表征，SPD模块在238 K的工作温度和160 ns的延迟时间下，光子探测效率为40%，暗计数率为9 kcps，后脉冲概率为4.6%。我们的工作为需要高度集成的近红外单光子探测的应用提供了一个实用的解决方案。
{"title":"Compact and Fully Functional High-Frequency Sine Wave Gating InGaAs/InP Single-Photon Detector Module","authors":"Qi Xu;Chao Yu;Dajian Cui;Xuan-Yi Zhang;Wei Chen;Yu-Qiang Fang;Lianjun Jiang;Qixia Tong;Jianglin Zhao;Jun Zhang","doi":"10.1109/JSTQE.2024.3522205","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3522205","url":null,"abstract":"High-frequency sine wave gating (SWG) InGaAs/InP single-photon detectors (SPDs) are widely used for synchronous near-infrared single-photon detection. For practical use, the size of SPD is one of the most concerning features for system integration. Here we present, to the best of our knowledge, the most compact and fully functional high-frequency SWG InGaAs/InP SPD. We develop a sine wave gating integrated circuit (SWGIC) using system-in-package technology that supports functions including large amplitude sine wave gate generation, coincidence gate generation, phase regulation, amplitude monitoring, and amplitude modulation. Moreover, we design and fabricate a high-performance multi-mode fiber coupled InGaAs/InP single-photon avalanche diode (SPAD) with a compact butterfly package. Furthermore, we implement a monolithically integrated readout circuit (MIRC) to extract the weak avalanche signal from large capacitance response of SWG. Finally, the SWGIC, SPAD, MIRC, and the affiliated circuits are integrated into a single module with a size of 6 cm × 5.7 cm × 1.7 cm. After characterization, the SPD module exhibits a photon detection efficiency of 40%, a dark count rate of 9 kcps, and an afterpulse probability of 4.6% at an operation temperature of 238 K and a hold-off time of 160 ns. Our work provides a practical solution for applications necessitating highly integrated near-infrared single-photon detection.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, all-group-IV (Si)GeSn alloys attracted great attention as materials for Infra-Red optoelectronics monolithically integrated on Si substrates. In this work, we present the fabrication and the electro-optical characterization of direct bandgap GeSn photodiodes with 15.4% of Sn grown on Ge Strain-Relaxed Buffers, themselves on 200 mm Si(001) wafers. The Ge0.846Sn0.154 photodetectors have a cutoff wavelength of 3.5 μm, e.g., they are suitable for methane detection around 3.3 μm. At this wavelength, their specific detectivity D* at room temperature is 3.76 × 107 cm.Hz1/2.W−1. This detectivity is 60 times better than that of previously reported photodetectors with equivalent Sn content. When such Ge0.846Sn0.154 photodiodes are placed in a gas cell together with a commercial Light Emitting Diode emitting at 3.3 μm, the system presents a limit of detection for methane of 1 600 parts per million with a noise density of 0.78%.Hz−1/2.
{"title":"Direct Bandgap Ge0.846Sn0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared","authors":"Clément Cardoux;Lara Casiez;Eric Kroemer;Marvin Frauenrath;Jérémie Chrétien;Nicolas Pauc;Vincent Calvo;Jean-Michel Hartmann;Olivier Lartigue;Christophe Constancias;Pierre Barritault;Nicolas Coudurier;Philippe Rodriguez;Aurélie Vandeneynde;Philippe Grosse;Olivier Gravrand;Alexei Chelnokov;Vincent Reboud","doi":"10.1109/JSTQE.2024.3520704","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3520704","url":null,"abstract":"Recently, all-group-IV (Si)GeSn alloys attracted great attention as materials for Infra-Red optoelectronics monolithically integrated on Si substrates. In this work, we present the fabrication and the electro-optical characterization of direct bandgap GeSn photodiodes with 15.4% of Sn grown on Ge Strain-Relaxed Buffers, themselves on 200 mm Si(001) wafers. The Ge<sub>0.846</sub>Sn<sub>0.154</sub> photodetectors have a cutoff wavelength of 3.5 μm, e.g., they are suitable for methane detection around 3.3 μm. At this wavelength, their specific detectivity D* at room temperature is 3.76 × 10<sup>7</sup> cm.Hz<sup>1/2</sup>.W<sup>−1</sup>. This detectivity is 60 times better than that of previously reported photodetectors with equivalent Sn content. When such Ge<sub>0.846</sub>Sn<sub>0.154</sub> photodiodes are placed in a gas cell together with a commercial Light Emitting Diode emitting at 3.3 μm, the system presents a limit of detection for methane of 1 600 parts per million with a noise density of 0.78%.Hz<sup>−1/2</sup>.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-18DOI: 10.1109/JSTQE.2024.3519983
Elger A. Vlieg;Roger Dangel;Bert J. Offrein;Folkert Horst
The computational cost of AI could be alleviated by accelerating the synaptic transfer calculations in artificial neural networks with an analog crossbar array processor. In this work, we present the core building blocks of an all-optical integrated photorefractive crossbar array for artificial neural network training by demonstrating photorefractive synapses in an integrated 2-D beam interaction network. We show that the photorefractive quality of the circuits resembles that of the bulk GaAs crystal that they were fabricated from. Then, this work experimentally validates the integrated photorefractive crossbar array design and constitutes a framework for engineering photorefractive integrated photonics.
{"title":"Photorefractive Integrated Photonics for Analog Signal Processing in AI","authors":"Elger A. Vlieg;Roger Dangel;Bert J. Offrein;Folkert Horst","doi":"10.1109/JSTQE.2024.3519983","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3519983","url":null,"abstract":"The computational cost of AI could be alleviated by accelerating the synaptic transfer calculations in artificial neural networks with an analog crossbar array processor. In this work, we present the core building blocks of an all-optical integrated photorefractive crossbar array for artificial neural network training by demonstrating photorefractive synapses in an integrated 2-D beam interaction network. We show that the photorefractive quality of the circuits resembles that of the bulk GaAs crystal that they were fabricated from. Then, this work experimentally validates the integrated photorefractive crossbar array design and constitutes a framework for engineering photorefractive integrated photonics.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10806637","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Developmental language disorder (DLD) presents significant clinical challenges and has lasting impacts on children. This study aims to develop a classification model for young children with DLD based on their brain function signals. Children aged 3.0 to 7.0 years participated in this study, including 21 children with DLD and 43 controls. All participants completed functional near-infrared spectroscopy (fNIRS) tasks designed to assess word expression ability (report task) and word comprehension ability (point task). General linear model (GLM) analysis was conducted to compare activation differences across fNIRS channels between the two groups. For DLD classification, a one-dimensional Convolutional Neural Network (CNN) was applied to hemoglobin oxygenation (HbO) signals from three regions of interest (ROIs), which included the bilateral inferior frontal gyrus (encompassing Broca's area), the bilateral temporo-parietal junction (encompassing Wernicke's area), and the bilateral motor cortex. Using HbO signal features the bilateral inferior frontal gyrus during the word expression task, the CNN model achieved a validation F1 score of 72.89%. Similarly, using HbO signal features from from the bilateral temporo-parietal junction during the word comprehension task, the CNN model achieved a validation F1 score of 71.81%. Additionally, children with DLD showed atypical activation in the right temporo-parietal junction area and left inferior frontal gyrus during both tasks. Our findings demonstrate that brain signals recorded during language tasks can effectively differentiate young children with DLD, highlighting the potential of task-based fNIRS as a valuable adjunct in the clinical diagnosis of DLD.
发展性语言障碍（Developmental language disorder， DLD）是一项重大的临床挑战，对儿童有着持久的影响。本研究旨在建立一种基于儿童脑功能信号的DLD分类模型。参与本研究的儿童年龄为3.0 ~ 7.0岁，包括21名DLD患儿和43名对照组。所有参与者都完成了功能性近红外光谱（fNIRS）任务，旨在评估单词表达能力（报告任务）和单词理解能力（点任务）。采用一般线性模型（GLM）分析比较两组间fNIRS通道的激活差异。对于DLD的分类，一维卷积神经网络（CNN）应用于三个感兴趣区域（roi）的血红蛋白氧合（HbO）信号，包括双侧额下回（包括Broca区），双侧颞顶叶交界（包括Wernicke区）和双侧运动皮层。在单词表达任务中，利用HbO信号特征的双侧额下回，CNN模型的验证F1得分为72.89%。同样，在单词理解任务中使用来自双侧颞顶交界处的HbO信号特征，CNN模型的验证F1得分为71.81%。此外，DLD患儿在两项任务中均表现出右侧颞顶交界处和左侧额下回的非典型激活。我们的研究结果表明，在语言任务中记录的大脑信号可以有效地区分患有DLD的幼儿，突出了基于任务的fNIRS作为DLD临床诊断中有价值的辅助手段的潜力。
{"title":"Classification of Children With Developmental Language Disorder Using Task fNIRS Data and Convolutional Neural Network","authors":"Aimin Liang;Zhijun Cui;Jin Ding;Bingxun Lu;Chunyan Qu;Shijie Li;Mengya Yin;Xiaolin Ning;Jiancheng Fang","doi":"10.1109/JSTQE.2024.3519572","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3519572","url":null,"abstract":"Developmental language disorder (DLD) presents significant clinical challenges and has lasting impacts on children. This study aims to develop a classification model for young children with DLD based on their brain function signals. Children aged 3.0 to 7.0 years participated in this study, including 21 children with DLD and 43 controls. All participants completed functional near-infrared spectroscopy (fNIRS) tasks designed to assess word expression ability (report task) and word comprehension ability (point task). General linear model (GLM) analysis was conducted to compare activation differences across fNIRS channels between the two groups. For DLD classification, a one-dimensional Convolutional Neural Network (CNN) was applied to hemoglobin oxygenation (HbO) signals from three regions of interest (ROIs), which included the bilateral inferior frontal gyrus (encompassing Broca's area), the bilateral temporo-parietal junction (encompassing Wernicke's area), and the bilateral motor cortex. Using HbO signal features the bilateral inferior frontal gyrus during the word expression task, the CNN model achieved a validation F1 score of 72.89%. Similarly, using HbO signal features from from the bilateral temporo-parietal junction during the word comprehension task, the CNN model achieved a validation F1 score of 71.81%. Additionally, children with DLD showed atypical activation in the right temporo-parietal junction area and left inferior frontal gyrus during both tasks. Our findings demonstrate that brain signals recorded during language tasks can effectively differentiate young children with DLD, highlighting the potential of task-based fNIRS as a valuable adjunct in the clinical diagnosis of DLD.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10806560","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-16DOI: 10.1109/JSTQE.2024.3518598
Xiaoqing Zheng;Tianzhu Zhang;Ying Chen;Hui Zhou;Hao Li;Lixing You
Superconducting nanowire single-photon detectors (SNSPDs) play a prominent role in sparse photon detection, but they tend to exhibit latching or saturation issues when confronted with high flux photons, which is commonly observed in applications such as deep space communication, LiDAR and passive imaging. Therefore, expanding the dynamic range of SNSPDs becomes indispensable. Inspired by the photoreceptor cells on human retina, this study conducted a biomimetic design of SNSPDs. The arrangement of pixels imitated the distribution of cone and rod cells, and the photosensitivity of these two different cells to the incident photons was altered by adjusting parameters such as linewidth, polarization, photosensitive area, and bias current. This design significantly enhances the overall dynamic range of the device, facilitating a linear response to incident photon flux ranging from 10 3 photons/s to 1.16×10 14 photons/s, and the dynamic range is 110.64 dB. Furthermore, imaging experiments using digital micromirror device (DMD) were performed to simulate high dynamic scenes. Combined with compressive sensing single pixel imaging strategy, imaging of incident light within a 90 dB range was achieved, demonstrating the functionality of the device over an extremely wide dynamic range.
{"title":"High Dynamic Range Superconducting Nanowire Single Photon Detectors","authors":"Xiaoqing Zheng;Tianzhu Zhang;Ying Chen;Hui Zhou;Hao Li;Lixing You","doi":"10.1109/JSTQE.2024.3518598","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3518598","url":null,"abstract":"Superconducting nanowire single-photon detectors (SNSPDs) play a prominent role in sparse photon detection, but they tend to exhibit latching or saturation issues when confronted with high flux photons, which is commonly observed in applications such as deep space communication, LiDAR and passive imaging. Therefore, expanding the dynamic range of SNSPDs becomes indispensable. Inspired by the photoreceptor cells on human retina, this study conducted a biomimetic design of SNSPDs. The arrangement of pixels imitated the distribution of cone and rod cells, and the photosensitivity of these two different cells to the incident photons was altered by adjusting parameters such as linewidth, polarization, photosensitive area, and bias current. This design significantly enhances the overall dynamic range of the device, facilitating a linear response to incident photon flux ranging from 10\u0000<sup>3</sup>\u0000 photons/s to 1.16×10\u0000<sup>14</sup>\u0000 photons/s, and the dynamic range is 110.64 dB. Furthermore, imaging experiments using digital micromirror device (DMD) were performed to simulate high dynamic scenes. Combined with compressive sensing single pixel imaging strategy, imaging of incident light within a 90 dB range was achieved, demonstrating the functionality of the device over an extremely wide dynamic range.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JSTQE.2024.3515048
Qimiao Chen;Weijie Mao;Lin Zhang;Chuan Seng Tan
Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scopes. Despite the potential of GeSn-based LEDs for short-wave infrared (SWIR) and mid-wave infrared (MIR) applications due to their CMOS compatibility and direct bandgap, these devices suffer from low directionality and light extraction efficiency. This study proposes a novel approach by integrating a dielectric metasurface with GeSn MQW LEDs to achieve directional light emission. We numerically demonstrate that this integration reduces the full width at half-maximum (FWHM) angle of the far-field emission from 60 to 10 degrees and enhances the emission intensity by a factor of 26 at normal incidence. These improvements suggest that metasurface-integrated GeSn LEDs hold significant promise for applications that require high brightness and precise directionality.
{"title":"Design of Directional-Emission GeSn Multi-Quantum-Well Light-Emitting Diodes on Si","authors":"Qimiao Chen;Weijie Mao;Lin Zhang;Chuan Seng Tan","doi":"10.1109/JSTQE.2024.3515048","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3515048","url":null,"abstract":"Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scopes. Despite the potential of GeSn-based LEDs for short-wave infrared (SWIR) and mid-wave infrared (MIR) applications due to their CMOS compatibility and direct bandgap, these devices suffer from low directionality and light extraction efficiency. This study proposes a novel approach by integrating a dielectric metasurface with GeSn MQW LEDs to achieve directional light emission. We numerically demonstrate that this integration reduces the full width at half-maximum (FWHM) angle of the far-field emission from 60 to 10 degrees and enhances the emission intensity by a factor of 26 at normal incidence. These improvements suggest that metasurface-integrated GeSn LEDs hold significant promise for applications that require high brightness and precise directionality.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-09DOI: 10.1109/JSTQE.2024.3512776
Laura Di Sieno;Alessandro Bossi;Francesco Sangalli;Alessandro Torricelli;Ilias Tachtsidis;Turgut Durduran;Antonio Pifferi;Alberto Dalla Mora
While standard optical oximetry systems make use of two/more wavelengths across the isosbestic point of oxy/deoxy-hemoglobin and between 650 and 900 nm, this work explores the possibility to use only light at 1064 nm wavelength to detect the absolute oxyhemoglobin concentration in tissues using time-domain diffuse optics. Furthermore, the possibility to exploit a 1064 nm wavelength coupled with wavelengths of classical approaches is also discussed. Our findings demonstrate a reasonable overlap of the new approaches as compared to the standard one, with confined discrepancies potentially linked to a not established agreement in the scientific community on the exact value of extinction coefficients of tissue constituents beyond 1000 nm, as well as to an increased penetration depth in the tissue at 1064 nm due to a lower scattering coefficient as compared to the visible range. These findings open the way to further studies in the field, also given the increasing advancements in lasers and detectors at 1064 nm.
{"title":"Oxyhemoglobin Measurements Using 1064 nm Light","authors":"Laura Di Sieno;Alessandro Bossi;Francesco Sangalli;Alessandro Torricelli;Ilias Tachtsidis;Turgut Durduran;Antonio Pifferi;Alberto Dalla Mora","doi":"10.1109/JSTQE.2024.3512776","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3512776","url":null,"abstract":"While standard optical oximetry systems make use of two/more wavelengths across the isosbestic point of oxy/deoxy-hemoglobin and between 650 and 900 nm, this work explores the possibility to use only light at 1064 nm wavelength to detect the absolute oxyhemoglobin concentration in tissues using time-domain diffuse optics. Furthermore, the possibility to exploit a 1064 nm wavelength coupled with wavelengths of classical approaches is also discussed. Our findings demonstrate a reasonable overlap of the new approaches as compared to the standard one, with confined discrepancies potentially linked to a not established agreement in the scientific community on the exact value of extinction coefficients of tissue constituents beyond 1000 nm, as well as to an increased penetration depth in the tissue at 1064 nm due to a lower scattering coefficient as compared to the visible range. These findings open the way to further studies in the field, also given the increasing advancements in lasers and detectors at 1064 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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