Pub Date : 2026-07-01Epub Date: 2026-01-05DOI: 10.1109/jstqe.2025.3650148
Alejandro De la Cadena, Edita Aksamitiene, Stephen A Boppart
Nonlinear microscopy enables label-free imaging by deriving contrast from the intrinsic spectroscopic responses of specimens, thereby offering a valuable tool for biomedical applications. Often, clinical imaging systems implement either multiphoton or vibrational contrast, not both. Consequently, most clinically deployed label-free nonlinear microscopes lack a robust, complementary contrast palette suitable for investigating the morphofunctional features of heterogeneous specimens. This deficiency limits not only the analytical capabilities of the nonlinear microscope but also its diagnostic utility. A main reason for this disregard is that the various imaging modalities impose distinct and stringent requirements on the excitation source and the detection chain. In this contribution, we propose a strategy that targets both multiphoton and vibrational contrasts to achieve a robust, complementary contrast palette. The approach emerges from a systematic investigation of readout schemes and provides engineering criteria to tailor the detection chain and thus maximize quantitative performance. In concert with this detection strategy, we present a compact laser source that drives vibrational coherences while simultaneously exciting multiphoton signals. We validate the resulting imaging platform using two rodent case studies: one involving a naturally occurring metastatic cancer in a mouse and another relying on an allogeneic mammary cancer model in a rat. Owing to its dimensions, cost, and versatility, we anticipate that this biophotonics tool will readily find its way into clinical applications.
{"title":"Unified Vibrational and Multiphoton Label-Free Nonlinear Microscopy for Simultaneous Chemical and Structural Imaging.","authors":"Alejandro De la Cadena, Edita Aksamitiene, Stephen A Boppart","doi":"10.1109/jstqe.2025.3650148","DOIUrl":"10.1109/jstqe.2025.3650148","url":null,"abstract":"<p><p>Nonlinear microscopy enables label-free imaging by deriving contrast from the intrinsic spectroscopic responses of specimens, thereby offering a valuable tool for biomedical applications. Often, clinical imaging systems implement either multiphoton or vibrational contrast, not both. Consequently, most clinically deployed label-free nonlinear microscopes lack a robust, complementary contrast palette suitable for investigating the morphofunctional features of heterogeneous specimens. This deficiency limits not only the analytical capabilities of the nonlinear microscope but also its diagnostic utility. A main reason for this disregard is that the various imaging modalities impose distinct and stringent requirements on the excitation source and the detection chain. In this contribution, we propose a strategy that targets <i>both</i> multiphoton and vibrational contrasts to achieve a robust, complementary contrast palette. The approach emerges from a systematic investigation of readout schemes and provides engineering criteria to tailor the detection chain and thus maximize quantitative performance. In concert with this detection strategy, we present a compact laser source that drives vibrational coherences while simultaneously exciting multiphoton signals. We validate the resulting imaging platform using two rodent case studies: one involving a naturally occurring metastatic cancer in a mouse and another relying on an allogeneic mammary cancer model in a rat. Owing to its dimensions, cost, and versatility, we anticipate that this biophotonics tool will readily find its way into clinical applications.</p>","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 4","pages":""},"PeriodicalIF":5.1,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12971071/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147432616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-12DOI: 10.1109/JSTQE.2026.3664943
Bryan S. Robinson
{"title":"Editorial Interview: Proliferating Free-Space Laser Communications for Space-Based Networks and Scientific Exploration","authors":"Bryan S. Robinson","doi":"10.1109/JSTQE.2026.3664943","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3664943","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 1: Advances in Free Space Laser Communications","pages":"1-2"},"PeriodicalIF":5.1,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11433117","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Editorial: Advances in Free-Space Laser Communications","authors":"Katia Shtyrkova;Farzana Khatri;Dimitar Kolev;Malcolm Wright","doi":"10.1109/JSTQE.2026.3663054","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3663054","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 1: Advances in Free Space Laser Communications","pages":"1-1"},"PeriodicalIF":5.1,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11425849","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-23DOI: 10.1109/JSTQE.2026.3665139
Elias A. Anwar;Vanessa N. Peters;Thejaswi U. Tumkur;Mikhail A. Noginov
We explore laser-induced dewetting of thin gold films deposited on different underlayers consisting of optical cavities of gold and silica. Our observations indicate that the morphology and optical response of laser-exposed regions are sensitive to the optical environment in vicinity of the dewetting layer.
{"title":"Laser-Induced Dewetting of Gold Thin Films on Optically Engineered Substrates","authors":"Elias A. Anwar;Vanessa N. Peters;Thejaswi U. Tumkur;Mikhail A. Noginov","doi":"10.1109/JSTQE.2026.3665139","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3665139","url":null,"abstract":"We explore laser-induced dewetting of thin gold films deposited on different underlayers consisting of optical cavities of gold and silica. Our observations indicate that the morphology and optical response of laser-exposed regions are sensitive to the optical environment in vicinity of the dewetting layer.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-6"},"PeriodicalIF":5.1,"publicationDate":"2026-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, a new approach of semiconductor laser is developed by integrating a vertical 1500-nm ridge-type InGaAsP P-i-N heterojunction Fabry–Pérot laser structure onto a SiC substrate via BCB adhesive wafer bonding technique. By taking advantage of a high thermal conductivity SiC substrate and thin <50 nm BCB, the whole laser structure with a low thermal impedance (TI) of 19.7 K/W was observed by measuring the wavelength shift, overall dissipated power, and substrate temperature, which could thus yield a high continuous wave output power of 30.4 mW. The laser exhibited a higher optical power level and a lower threshold current density than two other lasers with the same active regions but with InP and silicon-on-insulator (SOI) substrates, confirming that the low TI of the SiC substrate contributed to the laser performance enhancement. By simulating TI in structures with different substrate, it shows that the high thermal conductivity in SiC substrate with thin BCB can still be beneficial to the overall TI. The luminescent peak wavelength of the laser with the SiC substrate exhibited a strong blue-shift phenomenon, even at current densities above the threshold current density, indicating that the low TI of the substrate considerably reduced laser self-heating caused by current injection. A III–V material heterogeneously integrated into a SiC substrate scheme using the wafer bonding technique could have wide applications in high-performance, low-cost, process-facilitated photonic integrated circuits.
{"title":"Hybrid InGaAsP/SiC Fabry-Perot Laser on Low Thermal Impedance SiC Substrate via Adhesive Wafer Bonding Technique","authors":"Wei-Cheng Feng;Yang-Jeng Chen;Chung-Wei Hsiao;Bo-Hong Chen;Jing-Ya Chiu;Lu-Kuan Du;Zong-Ting Wang;Chih-Min Liao;Yi-Jen Chiu","doi":"10.1109/JSTQE.2026.3666229","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3666229","url":null,"abstract":"Herein, a new approach of semiconductor laser is developed by integrating a vertical 1500-nm ridge-type InGaAsP P-i-N heterojunction Fabry–Pérot laser structure onto a SiC substrate via BCB adhesive wafer bonding technique. By taking advantage of a high thermal conductivity SiC substrate and thin <50 nm BCB, the whole laser structure with a low thermal impedance (TI) of 19.7 K/W was observed by measuring the wavelength shift, overall dissipated power, and substrate temperature, which could thus yield a high continuous wave output power of 30.4 mW. The laser exhibited a higher optical power level and a lower threshold current density than two other lasers with the same active regions but with InP and silicon-on-insulator (SOI) substrates, confirming that the low TI of the SiC substrate contributed to the laser performance enhancement. By simulating TI in structures with different substrate, it shows that the high thermal conductivity in SiC substrate with thin BCB can still be beneficial to the overall TI. The luminescent peak wavelength of the laser with the SiC substrate exhibited a strong blue-shift phenomenon, even at current densities above the threshold current density, indicating that the low TI of the substrate considerably reduced laser self-heating caused by current injection. A III–V material heterogeneously integrated into a SiC substrate scheme using the wafer bonding technique could have wide applications in high-performance, low-cost, process-facilitated photonic integrated circuits.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-9"},"PeriodicalIF":5.1,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-17DOI: 10.1109/JSTQE.2026.3665681
Weishu Wu;Xudong Fan
We present a bioassay platform based on microlaser ensembles, offering a sensitive assay method with a high dynamic range. In this platform, microlasers are functionalized to capture analytes. The captured analytes introduce quenchers, thus increasing microlasers’ lasing thresholds and even turning off microlaser emission. We develop a theoretical model to count the number of quenchers and hence the number of captured analytes for microlasers by measuring their lasing thresholds. A statistical model is established to link the distribution of captured analytes to the lasing fraction of microlasers. Fundamentally different from digital ELISA, in which a microunit (such as a microbead) saturates when more than one analyte is present, the microlaser-based method can perform multiple quantized signal readouts by scanning the external pump across the lasing threshold. Therefore, this platform does not require the average number of analytes per microlaser be much lower than one, thus achieving a higher dynamic range. The detection limit and the factors that may affect the detection limit are also discussed.
{"title":"Theoretical Analysis of Bioassays Based on Microlaser Ensembles","authors":"Weishu Wu;Xudong Fan","doi":"10.1109/JSTQE.2026.3665681","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3665681","url":null,"abstract":"We present a bioassay platform based on microlaser ensembles, offering a sensitive assay method with a high dynamic range. In this platform, microlasers are functionalized to capture analytes. The captured analytes introduce quenchers, thus increasing microlasers’ lasing thresholds and even turning off microlaser emission. We develop a theoretical model to count the number of quenchers and hence the number of captured analytes for microlasers by measuring their lasing thresholds. A statistical model is established to link the distribution of captured analytes to the lasing fraction of microlasers. Fundamentally different from digital ELISA, in which a microunit (such as a microbead) saturates when more than one analyte is present, the microlaser-based method can perform multiple quantized signal readouts by scanning the external pump across the lasing threshold. Therefore, this platform does not require the average number of analytes per microlaser be much lower than one, thus achieving a higher dynamic range. The detection limit and the factors that may affect the detection limit are also discussed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 4: Adv. Biophoton. in Emerg. Biomed. Tech. and Dev","pages":"1-10"},"PeriodicalIF":5.1,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-13DOI: 10.1109/JSTQE.2026.3664420
He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens
We demonstrate micro-transfer printing ($mu$TP) and post-printing metallization of thin electronic chiplets on silicon, with a view to heterogeneously integrate electronic integrated circuits (EICs) with photonic integrated circuits (PICs). $mu$TP decouples the fabrication of EICs and PICs, and simultaneously enables their tight integration with high-throughput, small form-factor and on wafer-scale. In this study, we successfully established the process flow for releasing and printing 300 $mu$m × 200 $mu$m SiGe BiCMOS electronic driver chiplets and electrically connecting these chiplets using a polymer ramp to overcome the 20-$mu$ m chiplet thickness, providing a gain of 14 dB and bandwidth of over 35 GHz with low-parasitic interconnections. The proposed methodology provides a practical and mass-producible solution to realize the stacking of EICs on silicon photonic wafers for emerging applications such as co-packaged optics (CPO).
{"title":"Micro-Transfer Printing of SiGe BiCMOS Electronic Chiplets on Silicon","authors":"He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens","doi":"10.1109/JSTQE.2026.3664420","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3664420","url":null,"abstract":"We demonstrate micro-transfer printing (<inline-formula><tex-math>$mu$</tex-math></inline-formula>TP) and post-printing metallization of thin electronic chiplets on silicon, with a view to heterogeneously integrate electronic integrated circuits (EICs) with photonic integrated circuits (PICs). <inline-formula><tex-math>$mu$</tex-math></inline-formula>TP decouples the fabrication of EICs and PICs, and simultaneously enables their tight integration with high-throughput, small form-factor and on wafer-scale. In this study, we successfully established the process flow for releasing and printing 300 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m × 200 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m SiGe BiCMOS electronic driver chiplets and electrically connecting these chiplets using a polymer ramp to overcome the 20-<inline-formula><tex-math>$mu$</tex-math></inline-formula> m chiplet thickness, providing a gain of 14 dB and bandwidth of over 35 GHz with low-parasitic interconnections. The proposed methodology provides a practical and mass-producible solution to realize the stacking of EICs on silicon photonic wafers for emerging applications such as co-packaged optics (CPO).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). For a 15 μm diameter pillar with an aperture of 4 μm, single-mode lasing at 960 nm is demonstrated with a threshold power of about 12 mW and a Q-factor at threshold of 13000.
{"title":"Quantum-Dot Surface-Emitting Lasers: Micropillar Cavities Grown by Molecular-Beam Epitaxy","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Yakov Kovach;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil’ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2026.3662809","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3662809","url":null,"abstract":"Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and <italic>Q</i>-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). For a 15 μm diameter pillar with an aperture of 4 μm, single-mode lasing at 960 nm is demonstrated with a threshold power of about 12 mW and a <italic>Q</i>-factor at threshold of 13000.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 6: Special on Advances in VCSELs and PCSELs","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-04DOI: 10.1109/JSTQE.2026.3661028
Hyo-Sung Park;Hyun-Seung Choi;Eunsung Park;Woo-Young Choi;Myung-Jae Lee
We present a comprehensive comparative study of passive quenching active recharge (PQAR) and active quenching active recharge (AQAR) analog front-ends (AFEs) designed for 64 × 64 pixel arrays of single-photon avalanche diode (SPAD) pixels. These AFEs were fabricated using a back-side illuminated (BSI) 3D-stacked 40 nm/40 nm CMOS image sensor process. While configured as an array, initial verification was conducted at the pixel level, comparing both AFE types. To enable a truly fair and direct performance evaluation, which was often difficult in prior independent studies due to the use of different devices, processes, architectures, or assumptions, both AFE types were fabricated under identical process, wafer, and layout conditions on the same die. The SPADs exhibit a breakdown voltage of 22.5 V, a low dark count rate (5.1 cps/μm2 at 2 V excess voltage), and a high photon detection probability (25.1% at 850 nm at 2 V excess voltage). The AQAR pixel occupies a larger area (88.56 μm2) compared to the PQAR pixel (55.75 μm2), reflecting an area-performance trade-off. We analyzed methodologies for defining SPAD dead time, adopting inter-arrival time histogram analysis under intensive light. Experimental results demonstrate precise dead time control for both AFEs, achieving a minimum dead time of 2 ns and confirming maximum count rates up to near 500 Mcps. Moreover, this study experimentally verifies the effectiveness of active quenching in afterpulse suppression, leading to reduced noise and consequently contributing to an improved signal-to-noise ratio. The results of this study provide useful information on the design trade-offs and performance of PQAR and AQAR AFEs for various high-performance single-photon detection applications.
{"title":"40 nm/40 nm 3D-Stacked SPAD Pixels With Sub-10 μm Pitch and 2 ns Dead Time","authors":"Hyo-Sung Park;Hyun-Seung Choi;Eunsung Park;Woo-Young Choi;Myung-Jae Lee","doi":"10.1109/JSTQE.2026.3661028","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3661028","url":null,"abstract":"We present a comprehensive comparative study of passive quenching active recharge (PQAR) and active quenching active recharge (AQAR) analog front-ends (AFEs) designed for 64 × 64 pixel arrays of single-photon avalanche diode (SPAD) pixels. These AFEs were fabricated using a back-side illuminated (BSI) 3D-stacked 40 nm/40 nm CMOS image sensor process. While configured as an array, initial verification was conducted at the pixel level, comparing both AFE types. To enable a truly fair and direct performance evaluation, which was often difficult in prior independent studies due to the use of different devices, processes, architectures, or assumptions, both AFE types were fabricated under identical process, wafer, and layout conditions on the same die. The SPADs exhibit a breakdown voltage of 22.5 V, a low dark count rate (5.1 cps/μm<sup>2</sup> at 2 V excess voltage), and a high photon detection probability (25.1% at 850 nm at 2 V excess voltage). The AQAR pixel occupies a larger area (88.56 μm<sup>2</sup>) compared to the PQAR pixel (55.75 μm<sup>2</sup>), reflecting an area-performance trade-off. We analyzed methodologies for defining SPAD dead time, adopting inter-arrival time histogram analysis under intensive light. Experimental results demonstrate precise dead time control for both AFEs, achieving a minimum dead time of 2 ns and confirming maximum count rates up to near 500 Mcps. Moreover, this study experimentally verifies the effectiveness of active quenching in afterpulse suppression, leading to reduced noise and consequently contributing to an improved signal-to-noise ratio. The results of this study provide useful information on the design trade-offs and performance of PQAR and AQAR AFEs for various high-performance single-photon detection applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-11"},"PeriodicalIF":5.1,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11371710","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose and experimentally demonstrate a reconfigurable few-mode laser source through coupling a weak-resonant-cavity Fabry-Perot laser diode (WRC-FPLD) to a microring resonator (MRR), in which the MRR is utilized as an external cavity to implement self-injection. For such a scheme, when the feedback strength from the MRR to the WRC-FPLD is strong enough, the laser can enter a stable single-mode self-injection locking (SIO) state. Continuously increasing the feedback strength, two-mode and three-mode lasing states can be realized. Furthermore, the wavelength of few-mode lasing can be adjusted within dozens of GHz by varying the temperature of the MRR. Additionally, under relatively weak feedback strength, the laser exhibits an unlocked single-mode lasing state, which undergoes quasi-periodic bifurcation to a chaotic state, and finally reaches SIO with the increase of feedback strength. Under an optimized feedback strength, the effective bandwidth of the chaotic state arrives at 12.81 GHz. Such a reconfigurable few-mode laser source possesses some advantages, such as miniaturization, stability, and tunability, and it has application prospects in many fields, including mode-division multiplexing, optical sensing, and on-chip signal processing.
{"title":"Reconfigurable Few-Mode Laser Source Based on a WRC-FPLD Coupled With a Microring Resonator","authors":"Ziyi Kang;Qiupin Wang;Junqi Liu;Chaotao He;Yanfei Zheng;Maorong Zhao;Pu Ou;Dan Lu;Guangqiong Xia;Zhengmao Wu","doi":"10.1109/JSTQE.2026.3660839","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3660839","url":null,"abstract":"We propose and experimentally demonstrate a reconfigurable few-mode laser source through coupling a weak-resonant-cavity Fabry-Perot laser diode (WRC-FPLD) to a microring resonator (MRR), in which the MRR is utilized as an external cavity to implement self-injection. For such a scheme, when the feedback strength from the MRR to the WRC-FPLD is strong enough, the laser can enter a stable single-mode self-injection locking (SIO) state. Continuously increasing the feedback strength, two-mode and three-mode lasing states can be realized. Furthermore, the wavelength of few-mode lasing can be adjusted within dozens of GHz by varying the temperature of the MRR. Additionally, under relatively weak feedback strength, the laser exhibits an unlocked single-mode lasing state, which undergoes quasi-periodic bifurcation to a chaotic state, and finally reaches SIO with the increase of feedback strength. Under an optimized feedback strength, the effective bandwidth of the chaotic state arrives at 12.81 GHz. Such a reconfigurable few-mode laser source possesses some advantages, such as miniaturization, stability, and tunability, and it has application prospects in many fields, including mode-division multiplexing, optical sensing, and on-chip signal processing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 5: Self-Injection Locked Lasers and Assoc. Sys.","pages":"1-7"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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