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IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics IEEE 量子电子学选题期刊》主题代码和主题
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-28 DOI: 10.1109/JSTQE.2024.3470357
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引用次数: 0
IEEE Journal of Selected Topics in Quantum Electronics Publication Information IEEE 量子电子学选题期刊》出版信息
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-28 DOI: 10.1109/JSTQE.2024.3470351
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引用次数: 0
IEEE Journal of Selected Topics in Quantum Electronics Information for Authors IEEE 量子电子学选题期刊 作者须知
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-28 DOI: 10.1109/JSTQE.2024.3470355
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引用次数: 0
Editorial The Future of Microresonator Frequency Comb Technologies 社论 微谐振器频率梳技术的未来
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-25 DOI: 10.1109/JSTQE.2024.3482528
Lute Maleki
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引用次数: 0
Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers 用于光子晶体表面发射激光器的阱内点增益介质的热稳定性
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-25 DOI: 10.1109/JSTQE.2024.3486672
Subhashree Seth;Kevin J. Reilly;Fatih F. Ince;Akhil Kalapala;Chhabindra Gautam;Thomas J. Rotter;Alexander Neumann;Sadhvikas Addamane;Bradley Thompson;Ricky Gibson;Weidong Zhou;Ganesh Balakrishnan
Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. The epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.
嵌入 InGaAs 量子阱 (QW) 的自组装量子点 (QD) 被用作光子晶体表面发射激光器 (PCSEL) 的有源区。本研究开发了一种外延再生长方法来制造 "点中阱"(DWELL)PCSEL。外延再生长首先生长的是包含底部包层、波导、有源区和光子晶体(PC)层的部分激光结构。PC 层通过图案化实现腔体。随后重新生长顶部包层,以完成激光结构。在顶部包层的重新生长过程中,部分激光结构受到超过 600 °C 的高温生长,导致有源区意外退火。有源区的退火会改变 QDs 的尺寸,导致光致发光(PL)蓝移和 PL 发射变窄。这种效应会导致增益峰和空腔共振错位,从而使激光性能达不到最佳水平。众所周知,与 QD 和 QW 相比,DWELL 有源区具有更好的热稳定性,可以成为再生 PCSEL 的理想候选材料。我们成功地展示了一种光泵浦外延生长的DWELL PCSEL,其发射波长为1230 nm,可在室温下工作。此外,尽管采用了高温再生长工艺,DWELL 有源区仍显示出出色的发射波长稳定性和强度。
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引用次数: 0
Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers 基于砷化镓的边缘发光大功率二极管激光器的功率和效率扩展
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-24 DOI: 10.1109/JSTQE.2024.3484669
Paul Crump;Anisuzzaman Boni;Mohamed Elattar;S. K. Khamari;Igor P. Marko;Stephen J. Sweeney;Seval Arslan;Ben King;Md. Jarez Miah;Dominik Martin;Andrea Knigge;Pietro Della Casa;Günther Tränkle
Current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900…1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90…100 μm wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 μm stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 °C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. Overall, whilst operating efficiency and power continue to scale rapidly, a technological path for increased specific power and peak efficiency is also emerging.
本文介绍了在 900...1000 纳米波长范围内工作的基于砷化镓的广域边缘发射器--广域激光器 (BAL) 的连续波光输出功率和转换效率的扩展方面的最新进展。器件研究和工程设计工作确保了 BALs 始终是所有光源中效率最高的光源,因此在过去 10 年中,具有 90...100 μm 宽条纹的 BA 激光器在 20 W 连续波 (CW) 输出功率下的功率转换效率提高了 1.5 倍,达到 57%(通过外延层设计开发),而单个发射器的峰值 CW 功率提高了约 3 倍,达到 70 W(通过器件尺寸扩展),并且还在进一步扩展,例如通过使用多结设计。然而,可实现的峰值 CW 功率转换效率和 CW 特定输出功率(此处定义为具有单 p-n 结的 100 μm 条纹二极管激光器的峰值输出功率)却变化甚微,在过去十年中分别保持在 70% 和 25 W 左右。幸运的是,了解峰值效率和特定输出功率极限的研究也取得了进展。具体来说,最近的研究表明,光场和温度的空间不均匀性在限制功率和转换效率方面发挥了重要作用。在这些发现的推动下,平整横向和纵向温度曲线的技术努力已成功提高了功率和效率。此外,具有极高模态增益的外延层设计成功地降低了阈值电流,并将 25 °C 时的斜率提高到与 200 K 时观察到的数值相当,为实现目前只有在这些低温条件下才能看到的 80% 转换效率范围提供了一条途径。总之,在工作效率和功率继续快速增长的同时,提高比功率和峰值效率的技术途径也正在出现。
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引用次数: 0
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection 开发用于红外探测的硅基单片锗锡雪崩光电二极管
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3482257
Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.
我们展示了用于红外光探测的硅单片生长锗锡雪崩光电二极管(APD)。我们采用了相对较薄的 Ge 缓冲层设计,以允许有效的光载流子从 GeSn 吸收层传输到硅倍增层,从而首次在 GeSn/Si APD 雪崩击穿之前观察到清晰的穿透行为和 1550 纳米波长下 0.3 A/W 的饱和初级响应率。光谱响应范围为 1500 至 1700 纳米。测得的击穿电压和击穿电压分别为 15 V 和 17 V。直接参考同一器件的饱和初级响应率,而不是先前报告中不同的 GeSn pi-n 光电二极管,获得了无可争议的倍增增益,77 K 时的最大值为 4.5,250 K 时的最大值为 1.4。在 1550 纳米和 77 K 波长下测得的峰值响应率为 1.12 A/W。
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引用次数: 0
Recent Advances in Photonic Crystal Surface Emitting Lasers 光子晶体表面发射激光器的最新进展
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3481451
Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou
In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.
近几十年来,光子晶体表面发射激光器(PCSEL)作为一种新型的半导体光源设计,其性能有了巨大的提高。基于紧凑的半导体异质结构,PCSEL 不仅实现了接近衍射极限的光束发散,还实现了宽发射区域的单模激光。由于采用了平面腔体设计,PCSEL 腔体可以横向集成约束结构,从而有可能实现当前半导体激光器无法实现的性能。本文回顾了 PCSEL 的最新进展,包括高功率 PCSEL、横向约束 PCSEL 设计、高速 PCSEL 腔尺寸缩放、窄激光线宽和相干 PCSEL 阵列。
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引用次数: 0
Aging Mechanisms of Broad Area ∼800 nm Laser Diodes 宽域 ∼800 nm 激光二极管的老化机制
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3466169
Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty
This work presents a comprehensive study of early aging behavior (<500>15 cm−3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 1015 cm−3 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.
这项工作对早期老化行为进行了全面研究(15 cm-3 氧气比 1 × 1015 cm-3 氧气以下的器件在老化开始前的延迟时间(孵育时间)明显更长)。生成-重组电流和激光束诱导电流测量结果表明,氧气抑制了刻面上的缺陷密度和聚集,这可以解释为什么孵育时间更长。诊断数据和二极管模拟模型的参数拟合结果表明,空腔光损耗和缺陷密度的增加是老化过程中功率逐渐下降的主要原因,而不是非辐射重组的变化。根据密度泛函理论 (DFT) 模拟和已知的重组增强缺陷生成现象,提出了解释这种行为的机制。
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引用次数: 0
Performance Enhancement Reservoir Computing System Based on Combination of VCESL Optical Feedback and Mutual Injection Structure 基于 VCESL 光反馈和互注结构组合的性能增强型水库计算系统
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3480455
Pengjin Zhu;Hongxiang Wang;Yuefeng Ji
In this paper, a novel performance enhancement reservoir computing (RC) system based on the combination of vertical-cavity surface emitting laser (VCSEL) optical feedback and mutual injection (OFAI) structure is proposed and demonstrated numerically. By simultaneously introducing optical feedback and mutual injection structures into the proposed RC system, the nonlinear and high-dimensional mapping capabilities are significantly improved. The proposed system exhibits the best performance in both single task processing mode and parallel processing mode compared to the other 4 RC systems. Specifically, the minimum NMSE of Santa-Fe time series prediction, waveform classification and NARMA-10 task are 0.0011, 1.058$times 10^{-8}$ and 0.101 respectively. Furthermore, since two linear polarization modes coexist in VCSELs, the parallel-polarized and orthogonal-polarized configuration is considered. Numerical results show that in all benchmark tasks, the performance of the orthogonal-polarized configuration is generally better than the parallel-polarized configuration in single task processing mode, and the conclusion is opposite in parallel processing mode, which is related to the coupling mechanism between the two polarization modes. Finally, the effect of different parameters on the system performance is explored in detail. In summary, the proposed system is interesting and valuable in the field of high-speed and low-power neuromorphic photonics.
本文提出了一种基于垂直腔表面发射激光器(VCSEL)光反馈和相互注入(OFAI)结构组合的新型性能增强型水库计算(RC)系统,并进行了数值演示。通过在拟议的 RC 系统中同时引入光反馈和互注结构,非线性和高维映射能力得到了显著提高。与其他 4 个 RC 系统相比,所提出的系统在单任务处理模式和并行处理模式下均表现出最佳性能。具体来说,Santa-Fe 时间序列预测、波形分类和 NARMA-10 任务的最小 NMSE 分别为 0.0011、1.058/times 10^{-8}$ 和 0.101。此外,由于 VCSEL 中同时存在两种线性极化模式,因此考虑了平行极化和正交极化配置。数值结果表明,在所有基准任务中,在单任务处理模式下,正交偏振配置的性能普遍优于并行偏振配置,而在并行处理模式下,结论恰恰相反,这与两种偏振模式之间的耦合机制有关。最后,详细探讨了不同参数对系统性能的影响。总之,所提出的系统在高速、低功耗神经形态光子学领域具有重要意义和价值。
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引用次数: 0
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IEEE Journal of Selected Topics in Quantum Electronics
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