An Over 29.5-W, 7–13-GHz Wideband GaN Power Amplifier With High Harmonic Suppression

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-06-06 DOI:10.1109/LMWT.2024.3406708

Jialin Luo;Jing Wan;Baixi Du;Ruiying Gao;Xuming Sun;Xiaojie Zhang;Xiaoxin Liang

引用次数: 0

Abstract

This letter presents a high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-

$\mu $

m gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. An elliptic filter output matching network (MN) and a matching circuit design method based on the combination of port impedance model (PIM) and load pull are proposed, which can achieve high harmonics suppression across 7–13 GHz using a reactive matching (RM) technique. The three-stage GaN PA achieves a minimum output power of 44.7 dBm and a peak output power of 46.3 dBm at 7.5 GHz. The power-added efficiency (PAE) is more than 34.4%, with a peak PAE of 39.0% at 9.5 GHz. The second harmonic suppression (HS2) reaches more than 22.5 dBc. The PA chip occupies an area of

$4.8\times 3.0$

mm2.

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功率超过 29.5 瓦、具有高谐波抑制能力的 7-13-GHz 宽带氮化镓功率放大器

本文介绍了一种基于 0.25- $\mu $ m 氮化镓（GaN）高电子迁移率晶体管（HEMT）工艺的高功率放大器（HPA）单片微波集成电路（MMIC）。本文提出了一种椭圆滤波器输出匹配网络（MN）以及基于端口阻抗模型（PIM）和负载拉力相结合的匹配电路设计方法，利用无功匹配（RM）技术实现了 7-13 GHz 的高谐波抑制。三级氮化镓功率放大器在 7.5 GHz 时的最小输出功率为 44.7 dBm，峰值输出功率为 46.3 dBm。功率附加效率（PAE）超过 34.4%，9.5 GHz 时的峰值 PAE 为 39.0%。二次谐波抑制（HS2）超过 22.5 dBc。功率放大器芯片的占地面积为 4.8 美元乘以 3.0 美元 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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