A 2-Way W-Band Power Amplifier With an Isolated Combining Output Network for Power Back-Off Efficiency Enhancement in 16-nm FinFet Technology

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-07-10 DOI:10.1109/LSSC.2024.3426336

Yahia Ibrahim;Ali Niknejad

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Abstract

This letter introduces a W-Band sequential power amplifier (PA) (Lehmann and Knoechel, 2008) with a novel output network designed to minimize passive and combiner losses, while reducing the overall footprint compared to conventional sequential and Doherty PAs (Doherty, 1936). An isolated output combiner sums two PAs operating in two different modes: 1) the main amplifier operates in class AB and 2) the auxiliary amplifier operates in class C. The measured PA achieves a saturated output power

$(\mathbf {P_{\mathrm { sat}}})$

of 13 dBm and a gain of 12.5 dB with 3-dB bandwidth (BW) from 79.5 to 94.5 GHz. Additionally, it demonstrates a peak power-added efficiency (PAE) of 19.4% and a 14.6% PAE at 6-dB power back-off (PBO) at 87.5 GHz. Furthermore, the PA achieves a data rate of 12 Gb/s for a 16QAM signal with an average output power of 5 dBm, an average PAE of 10%, and an EVM (RMS) of -20 dB. The PA was fabricated in 16-nm FinFet technology with core area of 0.15 mm2. To the authors’ knowledge, this PA has the highest PAE at 6-dB PBO for CMOS PAs operating in the W-Band.

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一款采用 16 纳米 FinFet 技术的双路 W 波段功率放大器，带有隔离式组合输出网络，可提高功率衰减效率

这封信介绍了一种 W 波段序列功率放大器（PA）（Lehmann 和 Knoechel，2008 年），与传统序列功率放大器和 Doherty 功率放大器（Doherty，1936 年）相比，它具有新颖的输出网络，旨在最大限度地减少无源损耗和合路器损耗，同时减少整体占地面积。测量的功率放大器实现了 13 dBm 的饱和输出功率 $(\mathbf {P_{\mathrm { sat}})$ 和 12.5 dB 的增益，带宽 (BW) 为 3 dB，频率范围为 79.5 至 94.5 GHz。此外，它的峰值功率附加效率（PAE）为 19.4%，在 87.5 GHz 的 6 分贝功率衰减（PBO）条件下，PAE 为 14.6%。此外，该功率放大器在平均输出功率为 5 dBm、平均 PAE 为 10%、EVM（RMS）为 -20 dB 的情况下，16QAM 信号的数据传输速率达到 12 Gb/s。功率放大器采用 16 纳米 FinFet 技术制造，核心面积为 0.15 平方毫米。据作者所知，在工作于 W 波段的 CMOS 功率放大器中，该功率放大器在 6 分贝 PBO 时具有最高的 PAE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

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