W-Band Asymmetric CMOS Switch Using Inductive Matching Technique

Abstract

In this study, we designed a W-band asymmetric single-pole double-throw (SPDT) switch using a 65-nm RFCMOS process. In order to secure the power-handling capability of the switch, all transistors constituting the switch were designed to be in the on-state in the transmit (Tx) mode. In addition, the designed switch was matched in the Tx mode and achieved compact size using the property of the inductor. In the receive (Rx) mode, four LC resonators were used to achieve both wide and high isolation and low insertion loss. At 70–90 GHz, the isolations in the Tx and Rx modes were measured higher than 17.5 and 22.5 dB, respectively. The insertion losses in the Tx and Rx modes were measured less than 3.71 and 3.11 dB, respectively, in the frequency range of 70–90 GHz. The measured input 1-dB compression points (IP1dBs) at 80 GHz were >18.5 dBm and 7.5 dBm in the Tx and Rx modes, respectively. The core size of the designed SPDT switch is 0.057 mm2.