Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt
{"title":"High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging","authors":"Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt","doi":"10.1109/JEDS.2024.3441389","DOIUrl":null,"url":null,"abstract":"Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm absorption regions and a 22% improvement in temporal response with 10 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm absorption region compared to an Si reference device of the same active area.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1051-1056"},"PeriodicalIF":2.4000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10632103","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10632103/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245
$\mu$
m) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245
$\mu$
m absorption regions and a 22% improvement in temporal response with 10
$\mu$
m absorption region compared to an Si reference device of the same active area.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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