High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-08-16 DOI:10.1109/JEDS.2024.3438210

Sunaina Priyadarshi;Abidur Rahaman;Mohammad Masum Billah;Sabiqun Nahar;Md. Redowan Mahmud Arnob;Jin Jang

引用次数: 0

Abstract

This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage range of 2 V~10 V could be shifted to 1.2 V ~ 4.41 V output voltage. The rising and falling times are less than 400 ns at the operational frequency of 50 kHz. Also, the multiple output power supply of 6 V, 3 V, and 1.8 V for interface circuits has been possible with a single supply of 10 V. The proposed LDS shows a switching power consumption of 95.57 pW and area of 0.023 mm2.

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利用 LTPO TFT 实现低功耗和接口电子器件的高速降电平移位器

本文旨在使用低温多晶硅氧化物（LTPO）电平降低转换器（LDS）来转换在不同频率下工作的不同幅度的电压信号。LTPO LDS 由 p 型低温多晶硅和 n 型 a-InGaZnO 薄膜晶体管组成。输入电压范围为 2 V~10 V，可转换为 1.2 V~4.41 V 的输出电压。在 50 kHz 的工作频率下，上升和下降时间小于 400 ns。此外，只需 10 V 单电源，即可为接口电路提供 6 V、3 V 和 1.8 V 的多路输出电源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.