Development of an ultra-clean sample heating stage for thermal desorption spectroscopy

Abstract

Control of surface molecular contamination (SMC) for components used in chemical vapor deposition (CVD), atomic layer deposition (ALD) and EUV photolithography is important to maintaining high yield and optimal tool operation at the latest process nodes in leading edge semiconductor manufacturing. High temperature thermal desorption spectroscopy (TDS) is a versatile tool for analyzing the cleanliness of surfaces, simulating thermal vacuum processes and studying the kinetics of desorption processes. A basic analysis of TD spectra allows for full characterization of volatile outgassing from surfaces, while detailed analysis can provide chemical information about the substrate surface.

In fundamental studies, TDS is often carried out from low temperatures to room temperature or for small samples. However, for microelectronics applications, high temperature studies of large (100 mm or greater) samples are of greater interest due to direct applications for cleanliness testing and thermal vacuum simulation. A limitation for TDS sensitivity is the outgassing of sample stage materials, particularly when analyzing gases that may be present in the chamber background such as water, CO and CO₂. Typical sample stages are often tested only for total pressure or at room temperature.

In this study, we present a simple ultra-high vacuum (UHV) compatible sample heating stage for trace outgassing analysis of 100 mm samples at high temperatures. Simulation results are presented to support the feasibility of the concept. Experimental results verify the cleanliness of the stage via room temperature residual gas analysis (RGA) analysis and X-ray photoelectron spectroscopy (XPS) of stage components. Finally, use of this stage in a TDS analysis of a 100 mm Si witness wafer and comparison to room temperature RGA demonstrates operational capability.

The sample heating stage is both shown to be clean at high temperature and capable of analyzing 100 mm wafers to higher sensitivity than room temperature RGA for all m/z at the 1 × 10⁻⁹ mbar level. Despite its high performance, the heating stage is also easily produced by any laser machining service, greatly improving the accessibility of UHV science for all researchers.