{"title":"Suppression of Threshold Voltage Variation by H₂ Plasma Improved KrF Photoresist Profile","authors":"Cheng-Hao Liang;Ran Bi;Hao Liu;Song He;Hang Li;Yu-Long Jiang","doi":"10.1109/TED.2024.3433311","DOIUrl":null,"url":null,"abstract":"The effect of H2 plasma improved KrF photoresist (PR) profile after exposure without bottom anti-reflection coating (BARC) on planar PMOSFET performance in static random access memory (SRAM) is investigated. The proposed H2 plasma treatment is revealed to be able to obtain a well-controlled KrF PR profile with a more PR-safer process. It is demonstrated that such a KrF PR profile can effectively prevent the ions of NMOSFET pocket ion implantation from entering the substrate of PMOSFET. Hence, ~17% reduction of threshold voltage local variation for PMOSFETs in SRAM and ~8 mV improvement of static noise margin (SNM) for SRAM cell can be obtained without performance degradation for both NMOSFETs and PMOSFETs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10638483/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of H2 plasma improved KrF photoresist (PR) profile after exposure without bottom anti-reflection coating (BARC) on planar PMOSFET performance in static random access memory (SRAM) is investigated. The proposed H2 plasma treatment is revealed to be able to obtain a well-controlled KrF PR profile with a more PR-safer process. It is demonstrated that such a KrF PR profile can effectively prevent the ions of NMOSFET pocket ion implantation from entering the substrate of PMOSFET. Hence, ~17% reduction of threshold voltage local variation for PMOSFETs in SRAM and ~8 mV improvement of static noise margin (SNM) for SRAM cell can be obtained without performance degradation for both NMOSFETs and PMOSFETs.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
