Conquering surfactant-induced partial wetting of commercial membrane in membrane distillation through in-situ water flushing

IF 4.9 Q1 ENGINEERING, CHEMICAL Journal of Membrane Science Letters Pub Date : 2024-08-26 DOI:10.1016/j.memlet.2024.100082
Jiahao Mo , Yang Yang , Xianhui Li , Zhifeng Yang
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Abstract

Surfactant-induced wetting impedes the practical implementation of membrane distillation (MD). Addressing this issue demands the development of an effective membrane cleaning strategy that can eliminate surfactants adhering to the membrane surface and restore the membrane hydrophobicity. However, current cleaning methods, such as direct drying and pressurized air backwashing, encounter challenges in thoroughly removing surfactants trapped within the pores while preserving the structural integrity of the membrane. This work presents a refined approach to conquer surfactant-induced wetting in MD by water flushing. Utilizing ultrasonic time domain reflectometry and optical coherence tomography techniques, we identified a critical cleaning depth and showed that the hydrophobicity of a partially wetted membrane can be fully recovered by water flushing when the wetting depth is below the critical threshold. Theoretical models evidenced that in instances of low water temperature and low flow rate conditions, relatively high critical cleaning depths can be realized, thereby expanding the operational scope for achieving complete hydrophobicity recovery. Our results demonstrated the applicability of water flushing to commercial membrane modules without necessitating any modification, emphasizing its substantial potential for advancing MD applications.

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通过原位水冲洗解决膜蒸馏中表面活性剂引起的商用膜部分润湿问题
表面活性剂引起的润湿阻碍了膜蒸馏(MD)的实际应用。要解决这个问题,就需要开发一种有效的膜清洗策略,以消除附着在膜表面的表面活性剂,恢复膜的疏水性。然而,目前的清洁方法,如直接干燥和加压空气反冲洗,在彻底清除孔隙内的表面活性剂的同时保持膜结构的完整性方面遇到了挑战。这项研究提出了一种通过水冲洗来克服表面活性剂引起的 MD 润湿的改进方法。利用超声时域反射仪和光学相干断层扫描技术,我们确定了临界清洁深度,并表明当润湿深度低于临界阈值时,部分润湿膜的疏水性可通过水冲洗完全恢复。理论模型证明,在低水温和低流速条件下,可以实现相对较高的临界清洁深度,从而扩大了实现疏水性完全恢复的操作范围。我们的研究结果表明,水冲洗适用于商用膜组件,无需进行任何改动,强调了其在推进 MD 应用方面的巨大潜力。
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