Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics

Sheng-Zhu Ho , Yu-Chen Liu , Meng-Xun Xie , Yu-Huai Li , Kai-An Tsai , Chun-Wei Huang , Ying-Chih Pu , Jan-Chi Yang , Yi-Chun Chen
{"title":"Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics","authors":"Sheng-Zhu Ho ,&nbsp;Yu-Chen Liu ,&nbsp;Meng-Xun Xie ,&nbsp;Yu-Huai Li ,&nbsp;Kai-An Tsai ,&nbsp;Chun-Wei Huang ,&nbsp;Ying-Chih Pu ,&nbsp;Jan-Chi Yang ,&nbsp;Yi-Chun Chen","doi":"10.1016/j.mtelec.2024.100115","DOIUrl":null,"url":null,"abstract":"<div><p>Ferroic domains and relevant topological defects, such as domain walls and vortices, have gained significant attention as functional units for potential advancements in nanoelectronics. Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> (PZT) is a tetragonal ferroelectric material at room-temperature, exhibiting remarkable piezoelectricity and intricate domain structures. In this work, we explore the ferroelectric properties, photoelectric reactions, and efficient manipulation pathways of the unconventional superstructures in epitaxial (101)-oriented PZT thin films. Employing piezoresponse force microscopy (PFM) and conductive atomic force microscopy (cAFM), we unveil the three-dimensional polarization configurations of the superdomain structures inherently featuring conductive charged domain walls. Our findings reveal an increase in photoactivity at the head-side charged domain walls, attributed to the band-bending mechanism. Additionally, we discover the enhanced photoelectrochemical (PEC) performance in the superdomain structures compared to the (101)-oriented PZT films with conventional c/a domains. Furthermore, time-dependent pulse voltages are utilized to dynamically assess local currents and realize direct conductivity modulation by manipulating distinct polarization states. The elucidation of the photoelectrical mechanism and delineation of diverse pathways for intermediate state control underscore the potential of ferroelectric superdomains in constructing functional photoelectronic nanodevices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100115"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000275/pdfft?md5=655c50b1b2c1f8aa88f867ce1cae25f6&pid=1-s2.0-S2772949424000275-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949424000275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Ferroic domains and relevant topological defects, such as domain walls and vortices, have gained significant attention as functional units for potential advancements in nanoelectronics. Pb(ZrxTi1-x)O3 (PZT) is a tetragonal ferroelectric material at room-temperature, exhibiting remarkable piezoelectricity and intricate domain structures. In this work, we explore the ferroelectric properties, photoelectric reactions, and efficient manipulation pathways of the unconventional superstructures in epitaxial (101)-oriented PZT thin films. Employing piezoresponse force microscopy (PFM) and conductive atomic force microscopy (cAFM), we unveil the three-dimensional polarization configurations of the superdomain structures inherently featuring conductive charged domain walls. Our findings reveal an increase in photoactivity at the head-side charged domain walls, attributed to the band-bending mechanism. Additionally, we discover the enhanced photoelectrochemical (PEC) performance in the superdomain structures compared to the (101)-oriented PZT films with conventional c/a domains. Furthermore, time-dependent pulse voltages are utilized to dynamically assess local currents and realize direct conductivity modulation by manipulating distinct polarization states. The elucidation of the photoelectrical mechanism and delineation of diverse pathways for intermediate state control underscore the potential of ferroelectric superdomains in constructing functional photoelectronic nanodevices.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
外延铁电体中具有增强光电性能的多级可切换超域结构
铁电畴和相关拓扑缺陷(如畴壁和漩涡)作为可能推动纳米电子学发展的功能单元,受到了广泛关注。Pb(ZrxTi1-x)O3 (PZT) 是一种室温下的四方铁电材料,具有显著的压电性和复杂的畴结构。在这项研究中,我们探索了外延(101)取向 PZT 薄膜的铁电特性、光电反应以及非常规超结构的有效操作途径。利用压电响应力显微镜(PFM)和导电原子力显微镜(cAFM),我们揭示了以导电带电畴壁为固有特征的超畴结构的三维极化配置。我们的研究结果表明,由于带弯曲机制,头部带电畴壁的光活性有所提高。此外,与具有传统 c/a 结构的 (101) 取向 PZT 薄膜相比,我们还发现超域结构具有更强的光电化学 (PEC) 性能。此外,我们还利用随时间变化的脉冲电压来动态评估局部电流,并通过操纵不同的极化状态来实现直接电导率调制。对光电机制的阐明以及对中间状态控制的多种途径的界定,凸显了铁电超域在构建功能性光电纳米器件方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
2.10
自引率
0.00%
发文量
0
期刊最新文献
Recent advancements and challenges in highly stable all-inorganic perovskite solar cells Coherent epitaxy of HfxZr1-xO2 thin films by high-pressure magnetron sputtering Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution Monolayer nodal line semimetal AgTe as gate-reconfigurable ‘cold’ Ohmic contact to 2D semiconductors MoSi2N4 and WSi2N4
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1