{"title":"Brightness Scaling of InP-Based Diode Lasers for Communication and Sensing Applications","authors":"Jenna Campbell;Michelle Labrecque;Igor Kudryashov;Kevin McClune;Allen Chu;Matthew Larkins;Sarah Kinney;Leif Johansson;Milan Mashanovitch;Paul O. Leisher","doi":"10.1109/JSTQE.2024.3445771","DOIUrl":null,"url":null,"abstract":"High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 13xx – 17xx nm wavelength band could enable compact, direct diode solutions with performance metrics that previously have only been met by fiber lasers or solid-state laser systems. In this work, we report on tapered diode lasers that operate at 1550 nm with high efficiency and high brightness. These single emitter devices produce 5 W of continuous wave output power with 23% electrical-to-optical efficiency. The brightness is 187 MW cm\n<sup>-2</sup>\n sr\n<sup>-1</sup>\n, and the slow axis linear brightness is 9.1 W mm\n<sup>-1</sup>\n mrad\n<sup>-1</sup>\n. The percentage of power in the central lobe of the output beam is 87%, indicative of good beam quality. These results significantly impact applications such as communications and sensing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3000,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10638692/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 13xx – 17xx nm wavelength band could enable compact, direct diode solutions with performance metrics that previously have only been met by fiber lasers or solid-state laser systems. In this work, we report on tapered diode lasers that operate at 1550 nm with high efficiency and high brightness. These single emitter devices produce 5 W of continuous wave output power with 23% electrical-to-optical efficiency. The brightness is 187 MW cm
-2
sr
-1
, and the slow axis linear brightness is 9.1 W mm
-1
mrad
-1
. The percentage of power in the central lobe of the output beam is 87%, indicative of good beam quality. These results significantly impact applications such as communications and sensing.
期刊介绍：
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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