Frequency-domain analysis of CMOS-driven interconnects utilizing doped multilayer graphene nanoribbons and mixed carbon nanotube bundles

Abstract

A frequency-domain model is developed to analyze isolated interconnects of multilayer graphene-nanoribbon (MLGNR) and mixed carbon-nanotube bundle (MCB) driven by CMOS gates. The model derived is founded on an equivalent-single-conductor model of MLGNR and MCB that takes thermal considerations into account (i.e. TD-ESC). The model includes the derivation of transfer function of interconnect to estimate its delay and bandwidth performance. The attained results, reveals that among the neutral MLGNR (N-MLGNR), intercalation doped MLGNR (ID-MLGNR) intercalated with FeCl₃, MCB and Cu interconnects, FeCl₃ ID-MLGNR achieves the best bandwidth efficiency. At a global interconnect length of 1 mm, FeCl₃ ID-MLGNR outperforms N-MLGNR, MCB, and Cu in terms of bandwidth with an improved bandwidth value of 12.2 GHz, 7 GHz, and 61.4 GHz, respectively. Further, employing the proposed CMOS-gate-driven model, for FeCl₃ ID-MLGNR, bandwidth is improved by nearly 7.52 × at global length (∼1 mm) in relation to the linear resistance model. Additionally, TD-ESC dependency of the proposed model reveals that FeCl₃ ID-MLGNR becomes more stable as interconnect resistance increases.